The Effects of the Drive-in Process Parameters on the Residual Stress Profile of the p+ Thin Film

후확산 공정 조건이 p+ 박막의 간류 응력 분포에 미치는 영향

In this paper, the effects of the drive-in process parameters on the residual stress profile of the p+ silicon film has been investigated. All the residual stress profile has been estimated by the second-order polynomial. All the coefficients of the polynomial have been determined from the measurement of the deflections of cantilevers and a rotating beam by using a surface profiler meter and by means of focusing a calibrated microscope. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual stress decreases. If the boron concentration decreases the tensile residual stress decreases except near the surface where the magnitude of compressive residual stress increases.