Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1998.07d
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- Pages.1367-1369
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- 1998
A Study on Punchthrough and Hot-carrier Effects as LDD Process Parameters
LDD 공정 조건에 따른 편치쓰루 및 핫 캐리어 효과에 관한 연구
- An, Tae-Hyun (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Kim, Nam-Hoon (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Kim, Chang-Il (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Seo, Yong-Jin (School of Electrical and Electronic Eng., Daebul Univ.) ;
- Chang, Eui-Goo (Dept. of Electrical Eng., Chung-Ang Univ.)
- Published : 1998.07.20
Abstract
To achieve the ULSI goals of higher density, greater performance and operation speed have been scaled down. However, the reduction of channel length cause undesirable problems such as drop of punchthrough voltage, hot-carrier degradation and high leakage current, etc.. It is shown that the device characteristics depend on process parameters. In this Paper, we catched hold of trends of hot-carrier effects and punchthrough voltages due to variation of some process parameters such as LDD doses(P), spacer lengths, channel doses(
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