Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Effect of Boron Doped CdS Film on CdS/CdTe Solar Cell

CdS 박막의 boron doping에 따른 CdS/CdTe 태양전지 특성

  • Lee, H.Y. (School of electrical and computer engineering, Sungkyunkwan University) ;
  • Lee, J.H. (School of electrical and computer engineering, Sungkyunkwan University) ;
  • Kim, J.H. (School of electrical and computer engineering, Sungkyunkwan University) ;
  • Park, Y.K. (School of electrical and computer engineering, Sungkyunkwan University) ;
  • Shin, J.H. (Inorganic chemistry division, National Institute of Technology and Quality) ;
  • Shin, S.H. (Inorganic chemistry division, National Institute of Technology and Quality) ;
  • Park, K.J. (Inorganic chemistry division, National Institute of Technology and Quality)
  • 이호열 (성균관 대학교 전기전자컴퓨터 공학부) ;
  • 이재형 (성균관 대학교 전기전자컴퓨터 공학부) ;
  • 김정호 (성균관 대학교 전기전자컴퓨터 공학부) ;
  • 박용관 (성균관 대학교 전기전자컴퓨터 공학부) ;
  • 신재혁 (국립기술품질원 무기화학과) ;
  • 신성호 (국립기술품질원 무기화학과) ;
  • 박광자 (국립기술품질원 무기화학과)
  • Published : 1998.07.20
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Abstract

Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

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