• Journal of Powder Materials
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• v.25 no.4
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• pp.331-335
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• 2018

This study investigates the directional recrystallization behavior of Ni based oxide dispersion strengthened (ODS) alloy according to the zone annealing velocity. The zone annealing temperature is set as $1390^{\circ}C$, while the zone velocities are set as 2.5, 4, 6, and 10 cm/h, respectively. The initial microstructure observation of the as-extruded sample shows equiaxed grains of random orientation, with an average grain size of 530 nm. On the other hand, the zone annealed samples show a large deviation in grain size depending on the zone velocities. In particular, grains with a size of several millimeters are observed at 2.5-cm/h zone velocity. It is also found that the preferred orientation varies with the zone annealing velocity. On the basis of these results, this study discusses the role of zone velocities in the directional recrystallization of Ni base ODS alloy.

• Journal of Biosystems Engineering
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• v.10 no.1
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• pp.76-82
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• 1985

To investigate the influence of annealing heat treatment on the mechanical properties at the various weld zone, an experimental study was performed for the structural alloy steel. The results obtained from the experimental works are as follows: 1. Hardness and tensile strength showed the highest value at the heat affected zone, which was 5mm apart from bond zone. With increasing of annealing temperature, hardness and tensile strength were decreased at every weld zone, and bound in heat affected zone was increased. 2. Impact strength was the highest at the filler metal, and increased with increment of annealing temperature at filler metal and base metal. However, both at bond and heat affected zones, impact strength was increased from $700^{\circ}C$ of annealing temperature, and was decreased again over $900^{\circ}C$. 3. Mutual relationship between the mechanical properties at filler and base metals showed a similar linearty to that the common structural steel did. However, it varied unsteadly both at bond and heat affected zones. 4. It may be concluded that proper annealing temperature is $700^{\circ}C$ from the viewpoint of hardness, tensile and impact strength.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.411-416
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• 2016

Benzothienobenzothiophene ($C_8-BTBT$) is a soluble organic small molecule material with high crystallinity resulting from its strong self-organizing properties. In addition, the high mobility and easy fabrication of $C_8-BTBT$ make it very attractive in terms of organic thin-film transistors. In this work, we made $C_8-BTBT$ thin films by using the zone-casting method; we also used an organic solvent to treat the devices with solvent vapor annealing to improve the electrical properties. As a result, we confirmed improved mobility, threshold voltage, and subthreshold swing after solvent vapor annealing. To prove the effect of solvent vapor annealing, we used the simultaneous extraction model to extract the contact resistance from the current-voltage curve. We confirmed that the electrical properties improved with decreasing contact resistance.

• Journal of the Korean Society of Safety
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• v.2 no.3
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• pp.5-11
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• 1987

In this study, a mild steel (SS41) of the carbon steel, a spring steel (SUP-9), and stainless steel (SUS 304) of the special gceel, etc, are adopted as the experimental materrials and are weded by $CO_2$(SS41, SUP-9), TIG (SUS304), respectively. And the residual stress distribution and fracture behavior at the welded zone are examined according to annealing temperatures of four section involving as welded. As a consequence, the best annealing temperatures that the residual stress is removed enough and mechanical properties are very suitable are at 90$0^{\circ}C$ (SS41), 75$0^{\circ}C$ (SUP-9), 110$0^{\circ}C$ (SUS 304), respectively.

• Journal of the Korean Society for Precision Engineering
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• v.11 no.2
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• pp.173-181
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• 1994

A Cold spot temperature control system for the batch annealing furnace has been estabilished in order to reduce energy consumption to improve productivity and stabilize the propertics of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, variation of coil cold spot temperature with time during heating and actual temperature measurements at mid-width of each coil during heating and actual temperature measurements at mid-width of each coil during soaking. The results of the tempaeature variation effect on the batch annealing are as follows. 1) Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas, and annealing cycle time is reduced to 2.7 times. 2) In case of short time healing, the slowest heating part is the center of B coil, in case of long time heating, the low temperature point moves from the center of coil to inside coil. And the temperature in this part is higher than other parts when cooling. When finished heating, the cold spot is located 1/3 of coil inside in case of HNx atmospheric gas. But center of coil in case of Ax atmospheric gas. 3) The outside of top coil is the highest temperature point when heating, which becomes the lowest temperature point when cooling. So, this point becomes high temperature zone at heating and low temperature zone at cooling, It has relation according to atmospheric gas component and flow rate. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1214mm width coil must be 2.5 hours longer than that of 914mm width coil for the same ciol weight. 5) Annealing cycle time with Ax atmospheric gas is extended 1 hour in of slow cooling during 5 hours in order to avoid rapid cooling.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.87-93
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• 1995

Strontium titanate single crystal was grown by floating wne method. Growth conditions are as follows; at air atmosphere, rotation rate of upper and lower shafts were 20 - 25 rpm, 15 - 20 rpm respectively and growth rate was 3 mmlhr. As grown crystal was light brown color and transparent. After annealing, color was faded away. Growth direction was [112] direction and it was confirmed that grown crystal has $SrTiO_3$single phase and stoichiometric composition by XRD and EDS. Etch pit pattern was investigated after chemical etching in $350^{\circ}C$, KOH solution for 5 min and dielectric constant was measured at the range of room temperature ~ $350^{\circ}C$ .

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1178-1185
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• 2004

In the atmosphere of $N_2$ gas, BaZ $r_{0.08}$ $Ti_{0.92}$ $O_3$ polycrystal was grown by floating zone technique using BaZ $r_{0.08}$ $Ti_{0.92}$ $O_3$ ceramics as a feed and SrTi $O_3$(1l0) single cystal as a seed. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz for the as-grown sample were measured as a function of temperature in the temperature range between -10$0^{\circ}C$ and 150 $^{\circ}C$ to find a dielectric peak with frequency dispersion at Curie point. The hysteresis loop showed that the grown sample had very small polarization which was 0-0.01 $\mu$C/$\textrm{cm}^2$ for the applied dc-electric fields from -7 kV/cm to +7 kV/cm. However, the normal hysteresis loop was appeared after oxygen annealing. The electric-field dependence of the dielectric constant for both the as-grown and the post-annealed samples was studied by measuring the dielectric constants as a function of the biased-electric fields and their tunability was figured out from it at room temperature(27 $^{\circ}C$) and cryotemperature( -73$^{\circ}C$). Tunability for the as-grown sample was 51 % and the figure of merit 20.4 at 10kHz with the biased electric-field of 12 kV/cm. The tunability for the grown sample may be increased up to 80 % if the electric field of 25 kV/cm is applied. Tunability for the post-annealed sample was 41 % and the figure of merit 10.3 at 10 kHz with the biased electric-field of 12 kV /cm. Post-annealing improved the crystallinity of the as-grown sample but decreased its tunability.ability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.152-158
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• 2018

PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.

• Corrosion Science and Technology
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• v.13 no.2
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• pp.48-55
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• 2014

Influence of annealing temperature on the microstructure and resistance to pitting corrosion of the hyper duplex stainless steel was investigated in acid and neutral chloride environments. The pitting corrosion resistance is strongly dependent on the microstructure, especially the presence of chromium nitrides ($Cr_2N$), elemental partitioning behavior and volume fraction of ferrite phase and austenite phase. Precipitation of deleterious chromium nitrides reduces the resistance to pitting corrosion due to the formation of Cr-depleted zone. The difference of PREN (Pitting Resistance Equivalent Number) values between the ferrite and austenite phases was the smallest when solution heat-treated at $1060^{\circ}C$. Based on the results of electrochemical tests and critical crevice temperature tests, the optimal annealing temperature is determined as $1060^{\circ}C$.