• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.291-291
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• 2011

1차원 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si(111) 기판 위에 Ga-droplet을 촉매로 사용을 하여 molecular beam epitaxy로 성장을 하였다. 성장온도는 600$^{\circ}C$로 고정을 하였고 growth rate은 GaAs(100) substrate에서 2.5 A/s로 Ga의 양을 고정하고 V/III ratio를 1부터 8까지 변화를 시켰다. As의 양에 따라서 생성되는 NWs의 개수가 증가하고 growth rate이 빨라지는 것을 확인할 수 있었다. Transmission Electron Microscopy 분석 결과 낮은 V/III ratio에서는 zincblende, wurtzite 그리고 stacking faults 가 혼재 되어 있는 것을 확인 할 수 있었다. 이러한 결함은 소자를 만드는데 한계가 있기 때문에 pure zincblende나 pure wurtzite를 가져야 하는데 V/III ratio : 8 에서 pure zincblende구조가 되었다. Gibbs-Thomson effect에 따르면 구조적 변화는 Ga droplet과 NWs의 접면에서 크기가 중요한 역할을 한다[1]. 연구 결과 V/III ratio : 8일 때 Ga droplet의 크기가 zincblende성장에 알맞다는 것을 예상할 수 있었다. laser confocal photoluminescence 결과 상온에서 1.43 eV의 bandgap을 가지는 bulk구조와는 다른 와 1.49eV의 bandgap을 가지는 것을 확인하였다.

• Journal of Industrial Technology
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• v.1
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• pp.35-38
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• 1981

The conclutions arrived at as a result of experimental work are as follow; 1. The use of kerosene as a collector was found essential to produce a good recovery of chalcopyrite, galena and zincblende under the condition of high pH(below 2). 2. Temperature doesn't seemingly effect the flotation of chalcopyrite, galena and zincblende. 3. The minimum concentration of kerosene as a collecter was 26mg kerosene per liter of solution.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.6-13
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• 2001

By using a vertical Bridgeman method, single crystalline structures of $Mg_xZn_{1-x}Te(0{\le}X{\le}0.48)$ were grown for various Mg mole compositions. With the increasing Mg fraction, the lattice constant is linearly increased from 6.103 to 6.239$\AA$ for the range of $0{\le}X{\le}0.48$ and the lattice constant of zincblende MgTe was linearly extrapolated to the value of 6.433$\pm$0.002$\AA$. The optical properties of the crystalline structure were characterized with photocurrent measurements. As a results of photocurrent spectra, the single crystalline $Mg_xZn_{1-x}Te$ show the energy bandgap of 2.380 and 2.260eV at 4.2 and 294 K, respectively. The photocurrent peak blueshifts with increasing Mg mole fraction and show the linear dependence of energy bandgap, $E_g$(X)=b+(0.8)X. The extrapolation shows the energy bandgaps of MgTe of 3.18 and 3.06eV at the temperatures of 4.2 and 294K, respectively. Furthermore, the photocurrent peaks redshifts with increasing temperature and the temperature coefficient is given to the value of $dE_g$/dT=-(5.6~$6.1){\times}10^{-4}$eV/K. for the temperature range above 100K.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.3
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• pp.124-131
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• 2016

GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.127-131
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• 2003

High quality zincblende ZnTe(100) epilayers have been grown on semi-insulating $CaAs(100\pm2^{\circ})$substrate by hot-wall epitaxy. To grow high quality ZnTe epilayers, the growth temperature dependence of the surface topography, the growth rate, and the crystalline properties were investigated. From the photoluminescence measured at 10 K, the light hole and heavy hole free exciton emissions splitted by thermal tensile strain were observed and their first excited state emissions were also measured. The low temperature doublet of the heavy hole free exciton is because of the energy separation between longitudinal exciton and transverse exciton due to exciton-polariton coupling.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.118-118
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• 2000

We investigate Frohlich-like electron--optical-phonon interactionsin uniaxial crytals based on the macroscopic dielectric continuum model. In general, the optical-phonon branches support mixed longitudinal and transverse modes due to the anisotropy. For heterostructures with double interfaces and superlattices, it is known that confined, interface, and half-space optical phonon modes exist in zincblende cystals. In uniaxial structures, additional propagating modes may exist in wurtzite heterosystems due to anisotropic phonon dispersion. This is especially the case when the dielectric properties of the adjacent heterostructure materials do not differ substantially. The dispersion relations and the interaction Hamiltonians for each of these modes are derived.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.783-790
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• 2017

The energy band gaps and the bowing parameters of zincblende GaP1-xNx on the variation of temperature and composition are determined by using an empirical pseudopotential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter calculated is 13.1eV and the energy band gaps are decreased rapidly for GaP1-xNx ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of real dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.6
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• pp.1136-1142
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• 2001

$Zn_xSr_{1-x}S$ thin films were prepared in the whole composition range by rf sputtering, using powder targets of a mixture of ZnS and SrS with the required mole fraction. The possibility of existence of $Zn_xSr_{1-x}S$ solid solutions was systematically investigated from the results of thin film growth, in terms of structural, optical characteristics and the chemical bonding of the constituent atoms. The XRD, XPS and optical results made it clear that the solid solutions with a single-phased zincblende structure and a single-phased rocksalt structure were formed at $0.86~0.93{\leq}x{\leq}1\;and\;0{\leq}x{\leq}0.29$, respectively. The miscibility gap, including phase separation regions was found to exist in $0.3{\leq}x{\leq}0.86~0.91$, in which lattice constants, binding energy and absorption edges kept almost constant by the same values as those at border compositions. The experimental results on phase transition agreed well with the fraction of ionic character fi based on the Phillips' dielectric theory.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.12
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• pp.1165-1174
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• 2016

The energy band gaps and the bowing parameters of zincblende InAs1-xN are determined by using an empirical pseudopotential method(EPM) within the improved virtual crystal approximation(VCA), which includes the disorder effect. The direct-band-gap bowing parameter calculated by using the EPM is 4.1eV for InAs1-xNx ($0{\leq}x{\leq}0.05$). The dependences of the band gaps of N-dilute InAs1-xNx on the temperature and composition are calculated by modifying the band anti-crossing(BAC) model. The calculation results are consistent with experimental values, and the coupling parameter CMN of InAs1-xNx is found to be equal to 1.8 by fitting the EPM data.