• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.135-137
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• 2006

To improve device yield and throughput, faults in plasma processing equipment should be quickly and accurately diagnosed. Despite many useful information of ex-situ sensor measurements, their applications to recognize plasma faultshave not been investigated. In this study, a new technique to identify fault causes by recognizing X-ray photoelectron spectroscopy (XPS) using neural network and continuous wavelet transformation (CWT). The presented technique was evaluated with the plasma etch data. A totalof 17 experiments were conducted for model construction. Model performance was investigated from the perspectives of training error, testing error, and recognition accuracy with respect to various thresholds. CWT-based BPNN models demonstrated a higher prediction accuracy of about 26%. Their advantages over pure XPS-based models were conspicuous in all three measures at small networks.

• Vacuum Magazine
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• v.3 no.4
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• pp.8-13
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• 2016

The need of space-resolved x-ray photoelectron spectroscopy (XPS) has developed scanning photoelectron microscopy (SPEM). SPEM provides space-resolved XPS data from a spot of a sample as well as images of specific element, chemical state, valency distribution on the surface of a sample. Based on technical advancement of tight x-ray focusing, sample positioning accuracy, and electron analyzer efficiency, SPEM is now capable of providing ~100 nm space resolution for typical XPS functionality, and SPEM has become actively applied for the investigation of chemical state, valency, and electronic structure on the surface of newly discovered materials, such as graphene layers, dichalcogenide 2D-materials, and heterogenous new functional materials.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.281-283
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• 2005

Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.

• Journal of the Korean institute of surface engineering
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• v.23 no.3
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• pp.183-193
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• 1990

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.348-348
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• 2011

We present the interfacial electronic structures of electrodeposited Cu and Fe on bare and 1,4-phenylene diisocyanide (PDI)-functionalized Au nanoisland templates (NITs), and Au and Ag nanoparticles on transition metal oxide supports. Our discussion is based on the depth-profiling X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM).

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.728-734
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• 1996

To obtain the relation in the electrochemical reduction of $CO_2$ in aqueous $KHCO_3$ colution between an activity for the product and the nature of Cu electrode, the electrode surface was characterized by using two methods: X-ray photoelectron spectroscopy (XPS) and photoelectron emission (PE) measurement. Electrolyses were performed with Cu electrodes pretreated in several ways. The distribution of the products changed drastically with electrolysis time and the pretreatment method. The features in XPS spectra were closely connected with the product distribution. The oxide film at the electrode surface was gradually reduced to bare Cu metal with electrolysis time, resulting in a variation of the product distribution. PE was measured by verying the wavelength of incident light at several temperatures. The dependence of PE on the measurement temperature changed greatly before and after electrolysis.

• Vacuum Magazine
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• v.1 no.1
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• pp.17-20
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• 2014

This article introduces the basic concepts of various soft X-ray spectroscopies in the study of surface and interface electronic structures. Especially, recent results of X-ray photoelectron spectroscopy experiments on organic/inorganic thin films and a lead-free solder alloys will be discussed. Soft X-ray spectroscopies to understand the chemical and electrical properties would be of broad interest in the vacuum science communities.

• Analytical Science and Technology
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• v.7 no.1
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• pp.115-124
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• 1994

The corroded surface of cold rolled steel sheet in the process of rinsing after alkali-cleaning was examined by means of X-ray Photoelectron Spectroscopy(XPS). In addition, the surface-treated cold rolled steel with 0.05wt% $Na_5P_3O_{10}$ solution for the purpose of preventing the corrosion was examined by means of XPS and the results were compared with those for the non-treated cold rolled steel. It was found that the corroded surface consists of $Fe_2O_3$, FeO and $Fe(OH)_3$ and the thickness of the oxide layer is about $1500{\AA}$. On the other hand, in the case of surface-treated cold rolled steel, the phosphate layer of $60{\AA}$ thickness was found to act as a protective film over the relatively thin Fe oxide layer.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.168-171
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• 2017

In this study, we observed degradation mechanism of FKM O-ring by X-ray photoelectron spectroscopy(XPS) at atmosphere condition. FKM O-ring had 3.53mm of cross-sectional diameter and 91.67mm of inner diameter. After thermal degradation, oxygen atom concentration of FKM O-ring was increased to 20.39%, and fluorine atom concentration was decreased to 8.29%. We observed that degradation reaction occurred by oxidation reaction. By C1s and F1s peak analysis, we confirmed that oxidation reaction usually occurred at C-F bonding of FKM main chain. Also, carboxyl group(C-OH, C=O, O=C-O) produced by oxidation reaction from O1s peak analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.551-557
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.