• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.522-525
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• 2004

ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.147-151
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• 2011

In this study, we prepared graphene by using the modified Hummers-Offeman method and then introduced the metals (Pt, Pd and Fe) for dispersion on the surface of the graphene for synthesis of metal-graphene composites. The characterization of the prepared graphene and metal-graphene composites was performed by X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis and transmission electron microscopy (TEM). According to the results, it can be observed that the prepared graphene consists of thin stacked flakes of shapes having a well-defined multilayered structure at the edge. And the metal particles are dispersed uniformly on the surface of the graphene with an average particle size of 20 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.173.2-173.2
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• 2014

Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

• Carbon letters
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• v.21
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• pp.74-80
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• 2017

A highly facile and eco-friendly green synthesis of Annona squamosa (custard apple) leaf extract reduced graphene oxide (CRG) nanosheets was achieved by the reduction of graphene oxide (GO). The as-prepared CRG was characterized with X-ray diffraction (XRD), transmission electron microscope (TEM), Fourier-transform infrared spectroscopy (FT-IR), ultraviolet-visible (UV-Vis), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopic techniques. Removal of oxygen containing moieties from the GO was confirmed by UV-Vis, FT-IR and XPS spectroscopic data. The XRD and Raman data further confirmed the formation of the CRG. TEM images showed the sheet structure of the synthesized CRG. These results show that the phytochemicals present in custard apple leaf extract act as excellent reducing agents. The CRG showed good dispersion in water.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1242-1246
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• 2012

The Co oxide microfibers were synthesized using the electrospinning process and formed $Co_3O_4$ microfibers after being calcined at high temperatures. The calcination temperature influenced the diameters, morphology, crystalline phase, and chemical environment of the fibers. The surface morphology of the obtained fibers was examined by using the scanning electron microscope (SEM). As the calcination temperatures increased from room temperature to 873 and 1173 K, the diameters of the cobalt oxide fibers decreased from 1.79 to 0.82 and 0.32 mm, respectively. The structure of the fibers was investigated with X-ray diffraction (XRD) and transmission electron microscopy (TEM). The calcined $Co_3O_4$ fibers had crystalline face-centered cubic (fcc) structure. The X-ray photoelectron spectroscopy (XPS) results revealed that increasing the calcination temperature promoted the formation of $Co^{2+}$ and $Co^{3+}$ species.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.455-459
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• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.995-999
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• 2008

ZnO nanowires with tetrapod shape were formed on the surface of the sample by direct melt oxidation of Al-Zn alloy at $1000^{\circ}C$ in air. X-ray diffraction (XRD) pattern revealed that the ZnO nanowires had wurtzite structure of hexagonal phase. Any other element except Zn and O was not detected in energy dispersive X-ray spectrum. The c- and a-axis lattice constants estimated from the XRD pattern were 0.520 and 0.325 nm, respectively. These are in well accordance with those of bulk ZnO single crystal, indicating high quality crystallinity. The green light emission at a wavelength of 510 nm was observed from the nanowires at room temperature, which was ascribed to high density of oxygen vacancies in nanowires.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.385-385
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different oxygen concentration. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was in the range of 100-400 nm. AFM images show that the surface morphology was depended on the oxygen ratio. The crystal structure of copper oxide films was changed from metallic copper to copper oxide with increasing oxygen concentration. The oxidation states of Cu 2p and O 1s resulted from XPS were consistent with XRD results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1042-1045
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• 2004

ITO thin films ($\sim150nm$) are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AEM). The sheet resistance of ITO thin films compared $s_11$ values by using a near field scanning microwave microscope.

• Tribology and Lubricants
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• v.18 no.4
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• pp.260-266
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• 2002

In this study, the effects of oxide layer farmed on the wear tracks of TiN coated silicon wafer on friction and wear characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with 1 ${\mu}{\textrm}{m}$ in coating thickness. AISI 52100 steel ball was used fur the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction and wear characteristics using X-ray diffraction(XRD), Auger electron spectroscopy(AES), scanning electron microscopy (SEM) and multi-mode atomic force microscope(AFM).