• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.815-818
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• 2003

New sensing and writing schemes for a magneto-resistive random access memory (MRAM) with a twin cell structure are proposed. In order to enhance the cell reliability, a scheme of the low voltage precharge is employed to keep the magneto resistance (MR) ratio constant. Moreover, a common gate amplifier is utilized to provide sufficient voltage signal to the bit line sense amplifiers under the small MR ratio structures. To enhance the writing reliability, a current mode technique with tri-state current drivers is adopted. During write operations, the bit and /bit lines are connected. And 'HIGH' or 'LOW' data is determined in terms of the current direction flowing through the MTJ cell. With the viewpoint of the improved reliability of the cell behavior and sensing margin, HSPICE simulations proved the validity of the proposed schemes.

• 전기전자학회논문지
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• 제17권3호
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• pp.260-266
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• 2013

DRAM 에서 folded bit line 대비 open bit line은 데이터 read나 write 동작시 노이즈(noise)에 취약하다. 6F2(F: Feature Size) 구조의 open bit line에서 DRAM 집적도 증가에 따라 코어(core) 회로부 동작 조건은 노이즈로부터 더욱 악화된다. 본 논문에서는 비트라인(bit line) 간 데이터 패턴의 상호 간섭 영향을 분석하여, 기존의 연구에서는 다루지 않았던 open bit line 방식에서 데이터 패턴 상호 간섭의 취약성을 실험적 방법으로 확인하였으며, 68nm Tech. 1Gb DDR2에서 Advan Test장비를 사용하여 실험하였다. 또한 open bit line 설계 방식에서 노이즈 영향이 DRAM 동작 파라미터(parameter) 특성 열화로 나타나는데, 이를 개선 할 수 있는 방법을 센스앰프 전원분리 실험으로 고찰하였다. 센스앰프 전원분리시 0.2ns(1.3%)~1.9ns(12.7%) 이상 개선될 수 있음을 68nm Tech. 1Gb DDR2 modeling으로 시뮬레이션 하였다.

• 조형예술학연구
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• 제6권
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• pp.100-118
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• 2004

Mi Fu, who was associated with Wen Tong, invented the Mijoem Technique (Dotting Technique) in landscape painting with his son Mi Youren. His landscapes, which referred to Dong Yuan's landscape technique and was inspired by the scenery of Jiang Nan, illustrate the mood of a cloud-covered foggy landscape by liberally applying dots with ink. 'Chunsansoesong' which is considered done by Mi Fu, clearly shows the virtues of ink painting's spreading, absorbing and omission techniques. This simply rendered landscape - whose mountains and hills are wrapped in both clouds and fog - displays exquisiteness by using small dots. In 'Chunsansoesong', the characteristics of Song painting: a 'vital energy', a 'poem within the painting', a 'beauty of margin', a 'beauty of one brush stroke, and a 'display of inner meanings' are implicatively expressed This is because it's simple but connotatively delineative. There is the characteristic of a 'poem within the painting' when analyzing the both fragmented and combined 'Chunsansoesong'. The margins support an imaginative space as the height of the mountains get higher which result in deepening both the width and depth of the landscape space. Furthermore, the soft thickness of ink, clouds, pine trees, and pavilion evoke delineative feelings and a desire to write a poem Every thing in 'Chunsansoesong' is enveloped in both clouds and fog regardless of its distance and this delivers boundless feelings of Oriental mystery and urges a desire for 'writing a poem'. The pavilion that faces the cloud and fog-bound mountains especially flames the poetic urge further by inducing viewers' poetic imaginations. As we reviewed above, 'Chunsansoesong's cloud and fog-covered landscape is a good example that clearly showcases the characteristics of a 'Poem within the Painting'.

• 한국전기전자재료학회논문지
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• 제27권2호
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• pp.76-80
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• 2014

Dual-gate PCRAM which unify capacitor-less DRAM and NVM using a PCM instead of a typical SONOS flash memory is proposed as 1 transistor. $VO_2$ changes its phase between insulator and metal states by temperature and field. The front-gate and back-gate control NVM and DRAM, respectively. The feasibility of URAM is investigated through simulation using c-interpreter and finite element analysis. Threshold voltage of NVM is 0.5 V that is based on measured results from previous fabricated 1TPCM with $VO_2$. Current sensing margin of DRAM is 3 ${\mu}A$. PCM does not interfere with DRAM in the memory characteristics unlike SONOS NVM. This novel unified dual-gate PCRAM reported in this work has 1 transistor, a low RESET/SET voltage, a fast write/erase time and a small cell so that it could be suitable for future production of URAM.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.32-33
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• 2006

As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1426-1427
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• 2006

Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1329-1330
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• 2007

Phase-change random access memory(PRAM) has many advantages compare with the existing memory. For example, fast programming speed, low programming voltage, high sensing margin, low power consume and long cyclability of read/write. Though it has many advantages, there are some points which must be improved. So, we invented and studied new constitution of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. In this paper, we studied in order to make set operation time and reset operation voltage reduced. In the present work, by alloying Sb in $Ge_{1}Se_{1}Te_{2}$. we could confirm that improved its set operation time and reset operation voltage. As a result, the method of Sb-alloyed $Ge_{1}Se_{1}Te_{2}$ can be solution to decrease the set operation time and reset operation voltage.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 춘계학술대회논문집
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• pp.694-699
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• 2002

As the demand for slim laptops requires ion'-height optical disc drives, vibration problems of optical disc drives are of great concern. Additionally, with the decrease of a track width and a depth of focus in high density drives, studies on vibration resonance between mechanical parts become more important. From the vibration point of view, the performance of optical disc drives is closely related with the relative displacement between a disc and an objective lens which is controlled by servo mechanism. In other words, to read and write data properly, the relative displacement between an optical disc and an objective lens should be within a certain limit. The relative displacement is dependent on not only an anti-vibration mechanism design but also servo control capability. Good servo controls can make compensation for poor mechanisms, and vice versa. In a usual development process, robustness of the anti-vibration mechanism is always verified with the servo control of an objective lens. Engineers partially modify servo gain margin in case of a data reading error. This modification cannot correct the data reading error occasionally and the mechanism should be redesigned more robustly. Therefore it is necessary to verify a mechanism with respect to the possible servo gain plot. In this study we propose the experimental verification method far anti-vibration mechanism with respect to the existing servo gain plot. This method verifies axial vibration characteristics of optical disc drives on the basis of transmissibility. Using this method, we verified our mechanism and modified the mechanism for better anti-vibration characteristics.

• 한국소음진동공학회논문집
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• 제12권11호
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• pp.833-839
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• 2002

As the demand for slim laptops requires low-height optical disc drives, vibration problems of optical disc drives are of great concern. Additionally, with the decrease of a track width and a depth of focus in high density drives, studies on vibration resonance between mechanical parts become more important. From the vibration point of view, the performance of optical disc drives is closely related with the relative displacement between a disc and an objective lens which is controlled by servo mechanism. In other words, to read and write data properly, the relative displacement between an optical disc and an objective lens should be within a certain limit. The relative displacement is dependent on not only an anti-vibration mechanism design but also servo control capability. Good servo controls can make compensation for poor mechanisms, and vice versa. In a usual development process, robustness of the anti-vibration mechanism is always verified with the servo control of an objective lens. Engineers partially modify servo gain margin in case of a data reading error. This modification cannot correct the data reading error occasionally and the mechanism should be redesigned more robustly. Therefore it is necessary to verify a mechanism with respect to the possible servo gain plot. In this study we propose the experimental verification method for anti-vibration mechanism with respect to the existing servo gain plot. Thismethod verifies axial vibration characteristics of optical disc drives on the basis of transmissibility. Using this method, we verified our mechanism and modified the mechanism for better anti-vibration characteristics.