• Title/Summary/Keyword: write

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Write Characteristics of Silicon Resistive Probe

  • Jung, Young-Ho;Kim, Jun-Soo;Shin, Hyung-Cheol
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.821-824
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    • 2005
  • Probe storage is one of the strong candidates for future mobile storage device since it has potential of recording density over I $Tb/in^2$ with r/w speed over 100 Mbps. It also uses silicon-processing technology that suits the purpose of small form factor. In this paper, write characteristics of resistive probe that can rotate the field direction of PZT by field-induced resistance changes in a small resistive region at the apex of the tip will be presented. Also, the relationship between the size of tip and the available write width is investigated for different source bias conditions. For this study, two-dimensional computer simulation ($SILVACO^{TM}$) was performed. With optimum design, the width of the writing electric field can be smaller than 50nm

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New Dynamic Adaptive Threshold Destage Algorithms for Cached RAID 5 (RAID 5의 성능향상을 위한 쓰기 캐쉬의 동적 적응 반출기법)

  • Yie, Hyeok;Choi, Sang-Bang
    • Proceedings of the IEEK Conference
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    • 2000.06c
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    • pp.47-50
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    • 2000
  • In this paper, we propose a new destage algorithms, called the Dynamic Adaptive Threshold which determines turn-on and turn-off thresholds dynamically depending on the current write cache occupancy level and the differential rate of the host write requests. For performance evaluation, the proposed algorithm is compared with the wellknown High-Low Water Mark (HLWM) algorithm. Performance tests are fulfilled with our cached RAID 5 simulator. The simulation results show that the proposed algorithm outperforms the HLWM algorithm in terms of response time of host reads and write cache hit ratio under various workloads.

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Temperature Characteristic and Writing Quality Improvement of Blu-ray Laser Diode for Optical Disc Recording (광학 디스크 기록을 위한 Blu-ray Laser Diode의 온도특성 및 기록품질 개선)

  • Lee, Do-Han;Kim, Young-Kil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.7
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    • pp.1687-1692
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    • 2010
  • In this paper, we research the method for write quality improvement by temperature characteristic of Laser diode for optical recording. Differential Resistance of Blu-ray laser diode is changed by temperature. We analyze the effect of the change of the differential resistance in low temperature and propose the method for the write quality improvement.

How to write a medical paper: an introduction (올바른 의학 논문 작성법 (입문))

  • Hwang, Jin-Bok
    • Clinical and Experimental Pediatrics
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    • v.52 no.7
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    • pp.756-765
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    • 2009
  • This paper aims to provide an introduction to junior authors on how to write a medical paper in a clearer and more scientific manner. One important thing to be always remembered is that the reviewer and the reader will be reading your paper for the first time, and thus, you should make it as lucid as possible. You should pay attention to consistency in every regard in your paper. Use of the active voice usually makes the sentences shorter and clearer in meaning. Organize your content carefully and present it logically, avoiding unnecessary repetition in different sections. Give a diligent thought to every aspect; research is a work of the mind, not of the hands. Write technically, using powerful language. Most importantly, fulfill the exact submission requirements of the journal.

FPGA Design of High-Performance Memory Controller for Video Processing (비디오 처리를 위한 고성능 메모리 제어기의 FPGA 설계)

  • Noh, Hyuk-Rae;Seo, Young-Ho;Choi, Hyun-Jun;Kim, Dong-Wook
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2010.07a
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    • pp.411-414
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    • 2010
  • 본 논문은 비디오 처리를 위한 고성능의 메모리 제어기를 설계하였다. 메모리 제어기는 arbiter에 의해 제어되며 이것은 메모리 억세스를 요구하는 모듈들의 요구 신호를 받아 데이터를 전송하는 역할을 해주게 된다. 구현된 메모리 제어기는 버스를 사용하기 위한 승인을 받기 위해서 마스터와 신호를 주고 받는 MAU블록, grant 신호를 디코딩하고 컨트롤 신호의 상태를 정의한 arbiter 블록, SDRAM의 ac parameter를 저장하고 bank의 준비 여부, read/write 가능 여부, precharge와 refresh의 가능 여부를 확인하여 system과 read/write가 준비되었다는 신호를 출력, SDRAM의 실질적인 입력신호를 생성하는 memory accelerator 블록, 생성된 입력신호를 저장하고 마스터에서 직접 write data를 입력 받는 memory I/F 블록으로 구성된다. 이 메모리 제어기는 174.28MHz의 주파수로 동작하였다. 본 설계는 VHDL을 이용하여 설계되었고, ALTERA의 Quartus II를 이용하여 합성하였다. 또한 ModelSim을 이용하여 설계된 회로를 검증하였다. 구현된 하드웨어는 StatixIII EP3SE80F1152C2 칩을 사용하였다.

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A large capacity switching network with multi-write method (Multi-write 방식을 적용한 대용량 스위치 네트워크)

  • Oh, Don-Sung;Kang, Koo-Hong;Jang, Dong-Man;Park, Kwon-Chul;Koo, Ki-Wung
    • Proceedings of the KIEE Conference
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    • 1987.07b
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    • pp.974-977
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    • 1987
  • A digital switching network is proposed which is of Time - Space - Time architecture with a capacity of approximately 26,000 Erlangs. Large capacity time switchs, which have both concentration and time slot interchange(TSI) functions, are also implementated with relatively low speed devices by a newly proposed multi-write method.

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The Combined Effects of Metalinguistic Explanation and Self-Correction on Improving EFL Writing Accuracy

  • Kim, Bu-Ja
    • English Language & Literature Teaching
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    • v.15 no.3
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    • pp.83-104
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    • 2009
  • This study examined whether self-correction or metalinguistic explanation might make a difference in the ability to accurately write two English grammatical structures when learners received indirect teacher feedback in the form of underlining target errors in a Korean EFL college classroom. With the goal of helping low-proficiency students improve their ability to accurately write sentences including nonfinite present participial relative clauses and present participial constructions, four groups were formed: a group which received indirect feedback, a group which received indirect feedback and metalinguistic explanation, a group which received indirect feedback and self-corrected errors, and a group which received indirect feedback and self-corrected errors after receiving metalinguistic explanation. The results showed that the effects of either metalinguistic explanation or self-correction integrated with indirect feedback on learners' ability to accurately write the target structures were not meaningful, while the combined effects of metalinguistic explanation and self-correction were statistically significant.

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Fault Detection of Semiconductor Random Access Memories Using Built-In Testing Techniques (Built-In 테스트 방식을 이용한 RAM(Random Access Memory)의 고장 검출)

  • 김윤홍;임인칠
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.5
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    • pp.699-708
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    • 1990
  • This paper proposes two test procedures for detecting functional faults in semiconductor random access memories (RAM's) and a new testimg scheme to execute the proposed test procedures. The first test procedure detects stuck-at faults, coupling faults and decoder faults, and requires 19N operations, which is an improvement over conventional procedures. The second detects restricted patternsensitive faults and requires 69N operations. The proposed scheme uses Built-In Self Testing (BIST) techniques. The scheme can write into more memory cells than I/O pins can in a write cycle in test mode. By using the scheme, the number of write operations is reduced and then much testing time is saved.

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A network-attached WORM(Write Once Read Many) storage system (WORM(Write Once Read Many) 지원 네트워크 대용량 저장 장치를 위한 파일 시스템)

  • Kim, Moon-Kyung;Kim, Sun-Tae;No, Jae-Chun;Park, Sung-Sun
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.1177-1178
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    • 2008
  • This paper presents a network-attached WORM(Write Once Read Many) storage system whose purpose is to protect sensitive data that should not be accessed by accidental/intentional intrusion. In our storage system, the sensitive data would be marked and be stored into a specific WORM volume. Furthermore, with the associated WORM mark, the data whose WORM life cycle has been expired would automatically be moved to the general-purpose disk space, without interfering any other tasks, to save the WORM volume space. Our WORM storage system was integrated to the NAS product.

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Performance and Energy Optimization for Low-Write Performance Non-volatile Main Memory Systems (낮은 쓰기 성능을 갖는 비휘발성 메인 메모리 시스템을 위한 성능 및 에너지 최적화 기법)

  • Jung, Woo-Soon;Lee, Hyung-Gyu
    • IEMEK Journal of Embedded Systems and Applications
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    • v.13 no.5
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    • pp.245-252
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    • 2018
  • Non-volatile RAM devices have been increasingly viewed as an alternative of DRAM main memory system. However some technologies including phase-change memory (PCM) are still suffering from relatively poor write performance as well as limited endurance. In this paper, we introduce a proactive last-level cache management to efficiently hide a low write performance of non-volatile main memory systems. The proposed method significantly reduces the cache miss penalty by proactively evicting the part of cachelines when the non-volatile main memory system is in idle state. Our trace-driven simulation demonstrates 24% performance enhancement, compared with a conventional LRU cache management, on the average.