Write Characteristics of Silicon Resistive Probe

Probe storage is one of the strong candidates for future mobile storage device since it has potential of recording density over I $Tb/in^2$ with r/w speed over 100 Mbps. It also uses silicon-processing technology that suits the purpose of small form factor. In this paper, write characteristics of resistive probe that can rotate the field direction of PZT by field-induced resistance changes in a small resistive region at the apex of the tip will be presented. Also, the relationship between the size of tip and the available write width is investigated for different source bias conditions. For this study, two-dimensional computer simulation ($SILVACO^{TM}$) was performed. With optimum design, the width of the writing electric field can be smaller than 50nm