Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Extraction of Gate-Length Dependent Maximum Oscillation Frequency of Nano MOSFET

Nano MOSFET의 게이트길이 종속 최대진동주파수 추출

  • 김종혁 (한국외국어대학교 전자정보공학과) ;
  • 이용택 (한국외국어대학교 전자정보공학과) ;
  • 최문성 (한국외국어대학교 전자정보공학과) ;
  • 이성현 (한국외국어대학교 전자정보공학과)
  • 발행 : 2005.11.26
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초록

The gate-length dependence of maximun oscillation frequency $f_{MAX}$ is modeled by using scaling equations of equivalent-circuit parameters extracted from measured S-parameters of Nano-scale MOSFETs. The accuracy of the modeled $f_{MAX}$ is verified by observing good agreements with measured ones. It is observed that the $f_{MAX}$ initially increases with decreasing $L_g$ and then $f_{MAX}$ becomes saturated from $L_g$ less than 65nm.

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