• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• 한국염색가공학회지
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• 제21권1호
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• pp.1-9
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• 2009

A lot of research has been made over the recent decade to develop testing packages with antimicrobial properties to improve food safety. In this study, a new method, experimental device and technology for environmental corresponding packages of polypropylene (PP) film has been developed to provide effective temperature buffering during the transport/long-term storage of grains or foodstuffs from the supplier to the market. This quantitatively optimized mixing system enabled to produce PP films with the 700$\sim$1,400d (width;1.5$\sim$3mm, thickness;0.01$\sim$0.5mm). In the whole mixing systems, the finely-granulated inorganic illite and PP virgin chip for master batch (M/B) chip was calculated by digital measurement methods, and then the M/B chip for PP film was adapted through a air jet and PP grinding method. The prepared PP film was characterized with tensile strength and elongation, far infrared radiation (FIR) emissivity, antimicrobial activity and deodorization properties. The results revealed that the two differently grain-sized illite could be show homogeneously dispersed on PP chip surface, and as the increasing of illite content, the FIR emissivity and the anion emission rate of film was increasingly improved. In both of 325 and 1,500 mesh-sized illite contained PP chip, of course the antimicrobial activity was good. But the ultimate deodorization rate for ammonia gas of PP film were found to be approximately the same.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권3호
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• pp.354-362
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• 2017

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.

• 한국군사과학기술학회지
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• 제14권1호
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• pp.132-138
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• 2011

A micromachined silicon accelerometer capable of surviving and detecting very high accelerations(up to 200,000 times the gravitational acceleration) is necessary for a high impact accelerometer for earth-penetration weapons applications. We adopted as a reference model a piezoresistive type silicon micromachined high-shock accelerometer with a bonded hinge structure and performed structural analyses such as stress, modal, and transient dynamic responses and sensor sensitivity simulation for the selected device using piezoresistive-structural coupled-field analysis. In addition, structural optimization was introduced to improve the performances of the accelerometer against the initial design of the reference model. The design objective here was to maximize the sensor sensitivity subject to a set of design constraints on the impact endurance of the structure, dynamic characteristics, the fundamental frequency and the transverse sensitivities by changing the dimensions of the width, sensing beams, and hinges which have significant effects on the performances. Through the optimization, we could increase the sensor sensitivity by more than 70% from the initial value of $0.267{\mu}V/G$ satisfying all the imposed design constraints. The suggested simulation and optimization have been proved very successful to design high impact microaccelerometers and therefore can be easily applied to develop and improve other piezoresistive type sensors and actuators.

• 한국태양에너지학회 논문집
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• 제36권2호
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• pp.41-51
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• 2016

A solar air heater was designed for supplementary domestic heating. The absorber plate had a series of protruding notches which had triangular openings on the front surface of the absorber plate to direct partial air flow to the rear surface and to enhance the convective heat transfer to the flowing air. The height of the opening as well as the opening configuration was determined by preceding numerical simulations. The experimental model had an absorber plate of 0.78-m width and 1.0-m length which was coated with black paint. The air temperature increased as much as $18^{\circ}C$ for $90-m^3/h$ flow rate when the absorber plate was inclined by $45^{\circ}$ for a clear-day solar irradiation of about $906W/m^2$. The collector efficiency ranged from 69 to 74%. Considering the simplicity of the structure and low manufacturing cost, the solar air heater might have competence as an auxiliary heating device for domestic use. On-site experimental results are presented with discussion for various solar irradiations and air flow conditions.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.85-89
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• 2014

본 연구에서는 자기 소프트 몰드를 이용하여 피치 143.59 nm의 고 성능 NWGP(Nano Wire Grid Polarizer) 필름의 새로운 제조 방법을 제안하였다. 제작된 편광필름은 $6cm{\times}6cm$의 PET기판위에 알루미늄 격자 구조를 가지고 있으며, 이는 TFT-LCD(Thin Flat Transistor Liquid Crystal Display)에 응용 가능할 것으로 보인다. 자기 소프트 몰드는 너비 70.39 nm의 규격으로 제작되었으며, 이를 이용하여 2단계의 복제과정을 거쳐 제작되어진다. 이를 통해 본 연구에서는 기판위에 75.68 nm 선폭과 64.76 nm의 높이 143.59 nm pitch를 가지는 격자구조의 NWGP 패턴을 제작하였다. 또한, 이는 800 nm 파장 영역 대에서 75%의 최대 투과율과 10%의 최소 투과율을 가지는 것을 확인하였다. 따라서, 본 공정을 통해 독창적인 저 비용의 나노패터닝 기술로 디스플레이 산업에서 적용되어 질 것으로 보여진다.

• 한국광학회지
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• 제27권5호
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• pp.174-180
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• 2016

튜닝 가능한 광 신호 지연기를 설계, 제작 및 특성 측정을 하였다. 광 신호 지연기는 네 개의 폴리머 링 공진기 add/drop 필터들과 그 사이에 배치된 지연 도파로들로 구성되었다. 폴리머 도파로는 한변의 길이가 $1.8{\mu}m$ 인 정사각형 매립 구조이고, 코어와 클래딩의 굴절율은 각각 1.48과 1.37이다. 이와 같은 도파 구조로 인하여 매우 작은 반경의 곡선도파로를 활용함으로써, 콤팩트한 소자를 실현할 수 있다. 각각의 add/drop 필터의 링 공진기 상에 전극을 형성하여 열 광학 효과에 의한 튜닝이 가능하도록 하였다. 측정 결과, 각각의 add/drop 필터를 튜닝함으로써 지연 도파로의 수에 비례하는 지연 시간인 110 ps, 225 ps, and 330 ps를 확인할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.35-36
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

• 한국전자통신학회논문지
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• 제17권2호
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• pp.279-290
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• 2022

초전도 한류기는 초전도 전이를 이용하여 전류를 제어하는 전력기기로, 수 msec 이내에 고장전류를 정상전류로 변환하여 전력계통의 유연성, 안정성 및 신뢰성을 높일 수 있는 기기이다. 고온초전도 선재는 상전이 속도가 빠르고 임계전류밀도가 높으며 교류손실이 적어 초전도 한류기에 적합한 소재이지만 최적화 연구가 부족함에 따라 고온초전도 선재 특성에 의존하는 기존 방식은 한류소자의 설계, 투입 선재의 양 등에 있어 비효율적이다. 따라서 초전도 한류기에 적합한 선재를 개발하기 위해 임계전류 균일도 향상, 최적의 안정화재 재료 선정 및 균일 적층 기술 개발 연구가 수행되었다. 본 연구를 통하여 개발된 고온 초전도 선재는 710m 길이에서 평균 804 A/12mm-w의 임계전류를 가지는 선재제조 기술을 확보함에 따라 효율성 향상, 비용 절감 및 크기 축소로 경제적 성과를 확보할 수 있었다.

• 대한전자공학회논문지SP
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• 제41권3호
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• pp.111-120
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• 2004

본 논문에서는 경계 영역에서의 색번짐 현상을 줄이기 위한 벡터 오차 확산법을 제안한다. 이러한 결점은 양자화 과정에서 생기는 큰 누적된 양자화 오차의 확산으로 인해서 발성하게 되며, 특히 색이 변하게 되는 영상의 경계 영역에서 특정 칼라띠를 형성하게된다. 따라서 이러한 결점을 줄이기 위해서 세안한 벡터 오차 확산 방법은 오차를 확산 받은 벡터와 8개의 기준색과의 벡터 크기 및 벡터 각을 비교함으로써, 큰 양자화 오차를 전체 중간조 처리 과정에서 제외한다. 먼저 오차가 보정된 벡터의 크기가 8개의 기준색보다 클 경우 양자화 오차를 확산시키지 않게 되며, 벡터 각이 클 경우에도 양자화 오차를 확산 시키지 않는다. 그러므로 제안한 방법은 각 채널의 상관관계를 고려한 벡터 칼라 공간상에서 중간조 처리를 함으로써 시각적으로 색이 향상된 결과를 얻을 수 있었고, 경계 부분에서의 색번짐 현상도 줄일 수 있었다.