• Electrical & Electronic Materials
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• v.7 no.2
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• pp.117-122
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• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• ETRI Journal
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• v.26 no.1
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• pp.7-13
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• 2004

To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-on-insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on-resistance. The breakdown voltage and the specific on-resistance of the fabricated device is 352 V and $18.8 m{\Omega}{\cdot}cm^2$ with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at $V_{gs}=5V$ and $V_{ds}$=20V is 16 mA with a gate width of $150{\mu}m$.

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.462-468
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• 2010

A low power gas sensor with microheater was fabricated by MEMS technology. In order to heat up the gas sensing material to a operating temperature, a platinum(Pt) micro heater was built on to the micromachined Si substrate. The width and gap of microheater were $20\;{\mu}m$ and $4.5\;{\mu}m$, respectively. ZnO nanowhisker arrays were fabricated on a sensor device by hydrothermal method. The sensor device was deposited with ZnO seeds using PLD systems. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growthing ZnO nanowhiskers. The power consumption to heat up the gas sensor to a operating temperature was measured and temperature distribution of sensor was analyzed by a Infrared Thermal Camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high(64 %) sensitivity was obtained even at as low as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$ and was only 25 mW at $150^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.19-24
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• 2004

In this paper, we have demonstrated the fabrication of a 70 nm foot print of the T-gate by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method without a thin dielectric supporting layer on the substrate. The device performance was characterized by DC and RF measurement. The fabricated 70 nm InGaAs/InAlAs MHEMTS with 70 ${\mu}{\textrm}{m}$ unit gate width and 2 fingers showed good DC and RF characteristics of Idss, max =228.6 mA/mm, gm =645 mS/mm, and fT =255 GHz, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.910-913
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• 2009

This paper examines attaching speed, detaching speed and contact time which affected in the ink transfer ratio and presents the best conditions for fabrication process of electrodes with Ag-ink using microcontact printing method. In conclusion, it shows the best printing characteristic by two conditions. One of condition is the attaching speed have to within less than 1mm/s and the detaching speed is high velocity as 1000mm/s and the contact time is taken about the minimum time when inking process. Another condition is the attaching speed have to within more than 100mm/s and the detaching speed have to within less than 1mm/s and the contact time is longer than 30second when the printing process. As using these condition and the stamp sized 5cm${\times}$5cm, it was possible for printing equally until $30{\mu}m$ of width. The printed thickness of a electrode was about 300 to 500 nm, the surface roughness was about dozens nm under 50 nm.

• International Journal of Advanced Culture Technology
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• v.10 no.4
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• pp.518-528
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• 2022

Virtual Reality (VR) has been widely used in various applications to generate realistic virtual environments. A sense of immersion can be increased by providing additional stimuli such as tactile sensation to VR contents. However, it is still challenging to provide a realistic feel for the wind blowing over the whole body by smoothly controlling the airflow. To address this issue, we employ a household electric fan as a wind generating device to provide users with wind experience in VR environments. The wind generating device targets the whole body to mimic the wind we feel outside in our daily life. To do so, we present a low-cost method to smoothly control household fan speed using an Arduino microcontroller. Here, we use the Sinusoidal Pulse Width Modulation (SPWM) technique to generate the sinusoidal voltage required to drive the fan motor. Our experimental results show how Variable Voltage Variable Frequency (VVVF) is implemented at a low cost using our method for household fan speed control. The results can be applied to various VR applications to enhance the sense of immersion by providing users with realistic wind.

• The Transactions of the Korea Information Processing Society
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• v.4 no.4
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• pp.1100-1105
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• 1997

The verial black stripe is one of the defects in a chrge-coupled device(CCD). Vertical black stripes are caused by some signal chrges which fail to transport form the vertical CCD region to the horizontal one. The defective transport of signal charges orignates in the potential barrier with the narrow width effects in the verti-cal-horizintal interface stuccture. The vertical black stripes show up when the charge transfer dfficiency is less than 99.2% under the low illumination condition. In this research, we designed and developed a new vertical-horizontal interface structre of a delta type, thus marking it possible to eliminate the vertical black stripes.

• Journal of the Korean Society of Visualization
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• v.8 no.4
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• pp.13-18
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• 2010

This paper presents an experimental study on the performance of a micro-mixer using AC electro-osmotic flow. The microchannel is made of PDMS for the side and top walls and glass patterned with ITO for the bottom wall. We first investigated the effect of the applied potential as well as the frequency on the slip velocity. We have found that the slip velocity is roughly proportional to the applied voltage in line with the Helmholtz-Smoluchowski equation and there is an optimum frequency at which the slip velocity becomes maximized. To find the optimum parameters for mixing device we tested our device for various design parameters. It turned out that the best mixing effect is obtained approximately when the electrode angle is $30^{\circ}$, electrode width $200\;{\mu}m$, and the frequency of power supply 700 Hz.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.65-65
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• 2010

Extreme ultraviolet lithography (EUVL) is expected to be applied for making patterns below 32 nm in device industry. An ultrathin EUV photoresist (PR) of a few nm in thickness is required to reduce minimum feature size further. Here, we show that pentacene molecular layers can be employed as a new EUV resist for the first time. Dots and lines in nm scale are successfully realized using the new molecular resist. We clearly provide the mechanism for forming the nanopatterns with scanning photoemission microscope (SPEM), EUV interference lithography (EUV-IL), atomic force microscope (AFM), photoemission spectroscopy (PES), etc. The molecular PR has several advantages over traditional polymer EUV PRs; for example, high thermal/chemical stability, negligible outgassing, ability to control the height and width on the nanometer scale, leaving fewer residuals, no need for a chemical development process and thus reduction of chemical waste to make the nanopatterns. Besides, it could be applied to any substrate to which pentacene bonds chemically, such as $SiO_2$, SiN, and SiON, which is of importance in the device industry.