• Title/Summary/Keyword: width of device

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Analysis of Characteristics of the Blue OLEDs with Changing HBL Materials (정공 저지층의 재료변화에 따른 청색유기발광소자의 특성분석)

  • Kim, Jung-Yeoun;Kang, Myung-Koo;Oh, Hwan-Sool
    • 전자공학회논문지 IE
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    • v.43 no.4
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    • pp.1-7
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    • 2006
  • In this paper, two types of blue organic light-emitting device were designed. We have analyzed the characteristics of Type I device without a hole blocking layer, and analyzed the characteristics of Type II device using a hole blocking layer of BCP or BAlq materials with 30 ${\AA}$ thickness. We obtained the ITO having the work function value of 5.02 eV using $N_2$ plasma treatment method with the plasma power 200 W. Type I device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/$Alq_3$/LiF/Al:Li, and type II device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/HBL/$Alq_3$/LiF/Al:Li. We have analyzed the characteristics of Type I and Type II device. The characteristics of the device were most efficiency on occasion of using a hole blocking layer of BAlq material with 30 ${\AA}$ thickness. Current density was 226.75 $mA/cm^2$, luminance was 10310 $cd/m^2$, Current efficiency was 4.55 cd/A, power efficiency was 1.43 lm/W at an applied voltage of 10V. The maximum EL wavelength of the fabricated blue organic light-emitting device was 456nm. The full-width at half-maximum (FWHM) for the EL spectra was 57nm. CIE color coordinates were x=0.1438 and y=0.1580, which was similar to NTSC deep-blue color with CIE color coordinates of x=0.14 and y=0.08.

Reverse voltage characteristics of 4H SiC Schottky Diode by Edge termination Method (4H 탄화규소 쇼트키 다이오드에서 접합종단기법에 따른 항복전압특성)

  • Cheong, Hui-Jong;Bahng, Wook;Kang, In-Ho;Kim, Sang-Cheol;Han, Hyeon-Sook;Kim, Nam-Kyun;Lee, Yong-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.191-192
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    • 2005
  • The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

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Specimen Size Effect on Fatigue Properties of Surface-Micromachined Al-3%Ti Thin Films (Al-3%Ti 박막의 피로성질에 대한 시편 크기 영향)

  • Park, Jun-Hyub;Myung, Man-Sik;Kim, Yun-Jae
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1708-1711
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    • 2007
  • This paper presents high cycle fatigue properties of an Al-3%Ti thin film, used in a RF (radio-frequency) MEMS switch for a mobile phone and also describes new test method for obtaining static and dynamic characteristics of thin film and reliability evaluation method on MEMS device with thin film developed by authors. Durability should be ensured for such devices under cycling load. Therefore, with the proposed specimen and test procedure, tensile and fatigue tests were performed to obtain mechanical and fatigue properties. The specimen was made with dimensions of $1000{\mu}m$ long, $1.0{\mu}m$ thickness, and 3 kinds of width, 50, 100 and $150{\mu}m$. High cycle fatigue tests for each width were also performed, from which the fatigue strength coefficient and the fatigue strength exponent were found to be 193MPa and .0.02319 for $50{\mu}m$, 181MPa and -0.02001 for $100{\mu}m$, and 164MPa and -0.01322 for $150{\mu}m$, respectively. We found that the narrower specimen is, the longer fatigue life of Al-3%Ti is and the wider specimen is, the more susceptible to stress level fatigue life of Al-3%Ti was.

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Experimental investigation of earth pressure on retaining wall and ground settlement subjected to tunneling in confined space

  • Jinyuan Wang;Wenjun Li;Rui Rui;Yuxin Zhai;Qing He
    • Geomechanics and Engineering
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    • v.32 no.2
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    • pp.179-191
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    • 2023
  • To study the influences of tunneling on the earth pressure and ground settlement when the tunnel passes through the adjacent underground retaining structure, 30 two-dimensional model tests were carried out taking into account the ratios of tunnel excavation depth (H) to lateral width (w), excavation width (B), and excavation distance using a custom-made test device and an analogical soil. Tunnel crossing adjacent existing retaining structure (TCE) and tunnel crossing adjacent newly-built retaining structure (TCN) were simulated and the earth pressure variations and ground settlement distribution during excavation were analyzed. For TCE condition, the earth pressure increments, maximum ground settlement and the curvature of the ground settlement curve are negatively related to H/B, but positively related to H/s and H/w. For TCN condition, most trends are consistent with TCE except that the earth pressure increments and the curvature of ground settlement curve are negatively related to H/w. The maximum ground settlement is larger than that observed in tunnel crossing the existing underground structure. This study provides an assessment basis for the design and construction under confined space conditions.

4H-SiC High Power VJFET with modulation of n-epi layer and channel dimension (N-epi 영역과 Channel 폭에 따른 4H-SiC 고전력 VJFET 설계)

  • Ahn, Jung-Joon;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.350-350
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    • 2010
  • Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

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Analysis of the Evacuation Safety of Indoor Stadiums with Automatic Opening/Closing Exit Installations (출입문용 자동개폐장치를 설치한 실내체육관의 피난안전성 분석)

  • An, Jae-Chun;Kong, Ha-Sung
    • Journal of the Korea Safety Management & Science
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    • v.22 no.3
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    • pp.15-21
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    • 2020
  • This study analyzed the evacuation time in indoor stadiums when exits that automatically open/close when the fire sensor is triggered are installed as a means to improve the problem of closing certain exits. Firstly, when spectators on the 2nd floor stands exit through the 1st floor exits, the RSET of all inhabitants was 529.8 seconds when the automatic opening/closing exits are broken and employees are not present. Secondly, when spectators on the 2nd floor stands exit through the 1st floor exits, the RSET of all inhabitants was 445 seconds when the automatic opening/closing exits with 750mm width are working but employees are not present. Lastly, when spectators on the 2nd floor stands exit through the 1st floor exits, the RSET of all spectators was 337 seconds when the automatic opening/closing exits with 1,500mm width are working and employees are present. As a result, it was revealed that the evacuation time is shortened when the automatic opening/closing exits are working. Additional comparative studies with actual simulations of people evacuating an indoor stadium and firefighting simulations considering smoke flow are necessary.

A Study on a Digital Amplifier.Controller for Proportional Control Valve (비례제어밸브용 디지털 앰프.컨트롤러에 대한 연구)

  • Lee, J.C.;Koh, J.U.;Kwon, T.H.;Shin, H.B.
    • Transactions of The Korea Fluid Power Systems Society
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    • v.8 no.1
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    • pp.19-25
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    • 2011
  • This study presents the design of digital amplifier.controller for a proportional control valve and the development of PID discrete control scheme by using RCP(Rapid Controller Prototyping) system. RCP system is the device to embed the control code developed in PC into the microcontroller on-site. Ramp input test using the digital amplifier.controller developed in this study was carried out for the proportional control valve of domestic production and Bosch Rexroth respectively. The instability problem occurred around maximum displacement of localized valve spool at ramp input test was solved by supplementing offset current to the duty ratio of PWM(Pulse Width Modulation) driving signal to the solenoid. The comparison of test results between localized proportional control valve and Bosch Rexroth's product shows that the characteristics obtained by ramp input test and static flow gains are alike each other. Two valves are about the same in dead bands and hysteresis characteristics.

Design and Implementation of Video Encoder with Error less than $\pm$1 LSB ($\pm$1LSB 이하의 오차를 가지는 복합 영상 부호화기의 설계 및 구현)

  • 김주현;강봉순
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.6
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    • pp.1147-1152
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    • 2004
  • This paper presents the design of a multi-standard NTSC/PAL video encoder. The encoder converts International Telecommunication Union-Recommendation (ITU-R) BT.601 4:2:2, ITU-R BT.656 or RGB inputs from various video sources into National Television Standards Committee (NTSC) or phase-alternate line (PAL) TV signals in both S-video and composite video baseband signals (CVBS). The encoder adopts multiplier-free structures to reduce hardware complexity. The hardware bit width of programmable digital filters for luminance and chrominance signals, along with other operating blocks, are carefully determined to produce high-quality digital video signals of 1 least significant bit (LSB) error or less. The proposed encode. is experimentally demonstrated by using the Altera APEX20K600EBC652-3 device.

A Design of Interleaved DC-DC Buck-boost Converter with Improved Conduction Loss of Switch (스위치 전도 손실을 개선한 인터리브 DC-DC 벅-부스트 컨버터 설계)

  • Lee, Joo-Young;Joo, Hwan-Kyu;Lee, Hyun-Duck;Yang, Yil-Suk;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.14 no.3
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    • pp.250-255
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    • 2010
  • The interleaved power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device is proposed in this paper. The buck-boost converter used to provide the high output voltage and low output voltage for portable applications. Also we used the PWM(Pulse Width Modulation) control method for high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. The interleaved PMIC to reduce output ripple. And step-down DC-DC converter in stand-by mode below 1mA is designed with LDO in order to achive high efficiency.

Real-Time Automatic Target Detection in CCD image (CCD 영상에서의 실시간 자동 표적 탐지 알고리즘)

  • 유정재;선선구;박현욱
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.41 no.6
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    • pp.99-108
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    • 2004
  • In this paper, a new fast detection and clutter rejection method is proposed for CCD-image-based Automatic Target Detection System. For defence application, fast computation is a critical point, thus we concentrated on the ability to detect various targets with simple computation. In training stage, 1D template set is generated by regional vertical projection and K-means clustering, and binary tree structure is adopted to reduce the number of template matching in test stage. We also use adaptive skip-width by Correlation-based Adaptive Predictive Search(CAPS) to further improve the detecting speed. In clutter rejection stage, we obtain Fourier Descriptor coefficients from boundary information, which are useful to rejected clutters.