• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.36-41
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• 2011

Medical X-ray has been brought many changes according to the rapid development of high technology. Especially, for high-voltage generator which is the most important in X-ray generation the traditional way is to use high-voltage electric transformers primarily. However, since it is large and heavy and the ripple rate of DC high-voltage applied to X-ray tube is too big, it has a disadvantage of low X-ray production efficiency. To solve these problems, the studies about high-voltage power supply are now proceeding. At present, the high-voltage generator that generates high-voltage by making high frequency using inverter control circuit consisting of semiconductor device is mainly used. High-voltage generator using inverter has advantages in the diagnosis using X-ray including high performance with short-term use, miniaturization of power supply and ripple reduction. In this study, the X-ray high-voltage device with inverter type using pulse width modulation scheme to the control of tube voltage and tube current was designed and produced. For performance evaluation of produced device, the control signal analysis, irradiation dose change and beam quality depending on the load variation of tube voltage and tube current were evaluated.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.399-401
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• 2004

InGaAs/GaAs quantum wire structures were grown by low pressure metalorganic chemical vapor deposition by using selective area epitaxy.$ In_{ 0.2}$$Ga_{0.8}$ As/GaAs quantum wire structures were grown on a $SiO_2$ masked GaAs substrate. Quantum wire structures with sharp tips and smooth side walls were grown. We have grown InGaAs/GaAs quantum wire structures using variously opened width of the $SiO _2$ mask. Even though the opening widths of $SiO_2$ masked GaAs substrate were different, similar shapes of triangular structures were grown. Using various kinds of differently opened $SiO_2$ masked area, it would be possible to grow quantum wire structures with various thicknesses. The quantum wire structures are formed near the pinnacle of the triangular structure. Therefore, the fabrication of the uniquely designed integrated optical devices which include light emitting sources of multiple wavelength is possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1017-1021
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• 2007

To implement tera bit level non-volatile memories of low power and fast operation, proving statistical reproductivity and satisfying reliabilities at the nano-scale are a key challenge. We fabricate the charge trapping nano scaled SONOS unit memories and 64 bit flash arrays and evaluate reliability and performance of them. In case of the dielectric stack thickness of 4.5 /9.3 /6.5 nm with the channel width and length of 34 nm and 31nm respectively, the device has about 3.5 V threshold voltage shift with write voltage of $10\;{\mu}s$, 15 V and erase voltage of 10 ms, -15 V. And retention and endurance characteristics are above 10 years and $10^5$ cycle, respectively. The device with LDD(Lightly Doped Drain) process shows reduction of short channel effect and GIDL(Gate Induced Drain Leakage) current. Moreover we investigate three different types of flash memory arrays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.414-417
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• 2001

Recently, developments of device using characteristics of ceramics as a new technical material is in progress. While doing so, Ultrasonic motor which is a part of research & development of piezo-actuator by piezo-effects is being used in the various applications. So, we fabricated a flat-type $L_{1}-B_{8}$ mode Ultrasonic motor and measured the operation characteristics of its. The size of USM is 80*20*1.5[$mm^{3}$](length*width*thickness) and is constructed with stator by piezo-ceramics and stainless elastic body and rotator by bearings. As results of experiments, the fastest speed of revolution(v), the maximum torque(T) and the efficiency( $\eta$ ) were 37.5[cm/sec], 5.0[ $mN{\cdot}m$ ] and 1.17[%] respectively when 27.9[kHz], 150[gf], 50[V] were applied. So, we think this $flat-type_{1}-B_{8}$ mode Ultrasonic motor is able to be used for applications in forwarding device of a paper or electric card and so on.

• Journal of Information Display
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• v.9 no.3
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• pp.23-27
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• 2008

This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.32 no.5
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• pp.459-466
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• 2010

Alveolar distraction osteogenesis (ADO) has been regarded as an acceptable treatment for the alveolar bone deficiency. For ADO at anterior maxillary area, the vector should be oriented to forward and down-ward direction to get an adequate occlusion with mandibular teeth and to increase bone length and width for implant placement. However, the conventional commercial distraction devices for ADO are designed to allow mainly downward movement of alveolar segment, even though a forward movement can be obtained a little by controlling of inclination of device. To make ADO with controllable bidirectional vector possible, we used customized devices using self-manufactured ABDUL (Alveolar Bone Distractor Using Lag screw principle) and commercial orthodontic palatal expansion device ($Hyrex^{(R)}$). In all cases (n = 4), ADO could be performed successfully and dental implants were able to placed with adequate occlusion. We report the procedures, advantages and disadvantages of these methods.

• Nuclear Engineering and Technology
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• v.53 no.4
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• pp.1284-1288
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• 2021

In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (J_SC) and opencircuit voltage (V_OC) of the devices were investigated with variations of parameters such as the doping concentration, height, width of the p-GaN well region, well-to-well gap, and number of well regions. The J_SC of the device was significantly improved by a wider depletion area, which was obtained by applying the multi-well structure. The optimized device achieved a higher output power density by 8.6% than that of the conventional diode due to the enhancement of J_SC. The proposed device structure showed a high potential for a high efficiency BV cell candidate.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.08a
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• pp.27-36
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• 1999

To have high flatness quality of hot rolled strip in the hot strip finishing mill train, a new inter-stand tension profile measuring device of segmented looper roll type(coined as Flatness Sensing Inter-stand Looper, FlatSIL) and a new flatness control system have been developed in this study. The device measures the strip tension profile across the strip width and informs the strip wave pattern to new flatness control system where work roll bending mode to relieve the strip wave is determined. The existing automatic shape control system which uses laser type shape-meter installed at the outlet of the last finishing mill stand strip tension between down coiler and last finishig mill since the latent wave concealed by the strip tension between down coiler and last finishing mill stand cannot be measured by the laser distance-meter. Thus the existing shape control system is not able to control the flatness through the full strip length. The new flatness control system, however, works for full strip length during strip rolling as far as the tension profile measuring device and work roll bender are on. With the new flatness control system, work roll bender is automatically controller to minimize the latent wave of the running strip and the flatness quality as well as strip travelling stability has been noticeably improved from strip head through body to tail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• Journal of Convergence for Information Technology
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• v.11 no.11
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• pp.159-165
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• 2021

A fin channel with a fin width of 20 nm and a gradually increased source/drain extension regions are fabricated on a bulk silicon wafer by using a three-dimensional selective oxidation. The detailed process steps to fabricate the proposed fin channel are explained. We are demonstrating their preliminary characteristics and properties compared with those of the conventional fin field effect transistor device (FinFET) and the bulk FinFET device via three-dimensional device simulation. Compared to control devices, the three-dimensional selective oxidation fin channel MOSFET shows a higher linear transconductance, larger drive current, and lower series resistance with nearly the same scaling-down characteristics.