• Title/Summary/Keyword: white light

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Sub-sampling Technique to Improve the Measurement Speed of White Light Scanning Interferometry (백색광 주사 간섭계의 측정 속도 개선을 위한 서브 샘플링 기법 연구)

  • Chyun, In-Bum;Joo, Ki-Nam
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.11
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    • pp.999-1006
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    • 2014
  • In this investigation, we explain the sub-sampling technique of white light scanning interferometry (WLSI) to improve the measurement speed. In addition to the previous work using Fourier domain analysis, several methods to extract the height from the correlogram of WLSI are described with the sub-sampling technique. Especially, Fourier-inverse Fourier transformation method adopting sub-sampling technique is proposed and the phase compensation technique is verified with simulation and experiments. The main advantage of sub-sampling is to speed up the measurements of WLSI but the precision such as repeatability is slightly poor. In case of measuring the sample which has high height step or difference, the proposed technique can be widely used to reduce the measurement time.

Thinning Intensity for Large Diameter Trees in Korean White Pine Plantation of South Korea

  • Lee, Daesung;Seo, Yeongwan;Park, Jiyoung;Choi, Jungkee
    • Journal of Forest and Environmental Science
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    • v.33 no.1
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    • pp.74-77
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    • 2017
  • The purpose of this study is to analyze the effect of thinning intensity on the growth of large diameter trees in Korean white pine (Pinus koraiensis S. et Z.) plantation. Eight thinning plots were analyzed by categorizing into heavy thinning, light thinning, no thinning (control) according to thinning intensity. As a result, average DBH increased more in heavy thinning plots than in light thinning or unthinned plots. The number of large trees (DBH>25 cm) were obviously shown the most in heavy thinning plots. It is considered that heavy thinning is needed for the production of the large diameter trees.

Fabrication of White Organic light Emission Device Using Selective Doping in a Single Host (단일 호스트를 이용하여 선택적으로 도핑된 백색 OLED 제작)

  • Seo, Yu-Seok;Moon, Dae-Gyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04a
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    • pp.74-75
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    • 2009
  • White light emitting device based on a red fluorescence material (5,6,11,12)-Tetraphenylnaphthacene(Rubrene) has been fabricated. The white OLED consists of it and a blue phosphorescent material FIrPic (iridum-bis(4,6,-difluorophenylpyridinato-N,C2)-picolinate) The threshold voltage is 5.3V, and the brightness reaches $1000\;cd/m^2$ at 11V, $14.5\;mA/cm^2$. The color of the light corresponds to a CIE coordinate of (0.30, 0.38). The highest efficiency of the device can reach 9.5 cd/A or 5.5 1m/W at 6V, $0.1mA/cm^2$.

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The effects of moving accuracy on inteferometric 3D shape measurement (광 간섭계의 측정 정밀도와 구동 정밀도의 관계)

  • 박민철;엄창용;김승우
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2001.04a
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    • pp.110-113
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    • 2001
  • We present an interferometer system, which is able to perform both the phase shifting interferometry and white light interferometry. The interferometer system uses a d.c. motor to control the probe position with an accuracy of 10nm, which shows an outstanding performance on white light interferometry. However, the moving mechanism of d.c. motor is not accurate enough for the phase shifting interferometry that requires a moving precision less than 1 nm. We therefore propose a Fourier transform technique to calculate the phase of interferograms, which is strongly resistant to calibration errors and external vibration. Experimental results show that the Fourier transform technique is capable of reducing the measurement error caused by inaccurate movement within 0.1nm.

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Highly efficient white organic light-emitting diodes using hybrid-spacer or/and codoped blue emitting layers

  • Seo, Ji-Hoon;Kim, Gu-Young;Hyung, Gun-Woo;Lee, Kum-Hee;Kim, You-Hyun;Kim, Woo-Young;Yoon, Seung-Soo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1219-1221
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    • 2008
  • The Authors have demonstrated highly efficient white organic light-emitting diodes using hybrid-spacer which was inserted between each emitting layer or/and codoped blue emitting layers with the different functional material. The characteristics of WOLEDs showed the maximum external quantum efficiency of 13.8%, power efficiency of 33.66 lm/W, and Commission Internationale de I'Eclairage coordinates of (x=0.36, y=0.37), respectively.

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Nanocrystalline $Y_3Al_5O_{12}$:Ce Phosphor-Based White Light-Emitting Diodes Embedded with CdS:Mn/ZnS Core/Shell Quantum Dots

  • Kim, Jong-Uk;Lee, Dong-Kyoon;Lee, Jong-Jin;Yang, Hee-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.588-590
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    • 2008
  • Yellow-emitting $Y_3Al_5O_{12}$:Ce nanocrystalline phosphor and orange-emitting CdS:Mn/ZnS core/shell quantum dots were prepared by a modified polyol and a reverse micelle chemistry, respectively. To compensate a poor color rendering index of YAG:Ce nanocrystalline phosphor due to the lack of red spectral component, CdS:Mn/ZnS quantum dots were blended into YAG:Ce. Based on spectral evolutions in the blended systems, hybrid white light emitting diodes are fabricated and characterized.

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White Light Emitting Diodes for Illumination

  • Choi, Kyoung-Jae;Park, Joung-Kyn;Kim, Kyung-Nam;Kim, Chang-Hae;Kim, Ho-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1090-1092
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    • 2006
  • There is provided white light illumination system including a radiation source, a first luminescent material having a peak emission wavelength of about 575 to about 620 nm, a second luminescent material having a peak emission wavelength of about 495 to about 550 nm, which is different from the first luminescent material and a third luminescent material having a peak emission wavelength of about 420 to about 480 nm, which is different from the first and second luminescent materials. The LED may be a UV LED and the luminescent materials may be a blend of three phosphors. A human observer perceives the combination of the blue, green and red phosphor emissions as white light.

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Dispersive White-light Interferometry for in-situ Volumetric Thickness Profile of Thin-film Layers and a refractive index (분산형 백색광 간섭계를 이용한 미세 박막 구조물의 삼차원 두께 형상 및 굴절률의 실시간 측정)

  • Ghim Y.S.;Kim S.W.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.23-24
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    • 2006
  • We present a dispersive scheme of white-light interferometry that enables not only to perform tomographical measurements of thin-film layers but also to measure a refractive index without mechanical depth scanning. The interferometry is found useful particularly for in-situ 3-D inspection of micro-engineered surfaces such as liquid crystal displays, semi-conductor and MEMS structure, which requires for high-speed implementation of 3-D surface metrology.

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Quadratic polynomial fitting algorithm for peak point detection of white light scanning interferograms (백색광주사간섭무늬의 정점검출을 위한 이차다항식맞춤 알고리즘)

  • 박민철;김승우
    • Korean Journal of Optics and Photonics
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    • v.9 no.4
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    • pp.245-250
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    • 1998
  • A new computational algorithm is presented for the peak point detection of white light interferograms. Assuming the visibility function of white light interferograms as a quadratic polynomial, the peak point is searched so as to minimize the error sum between the measured intensity data and the analytical intensity. As compared with other existing algorithms, this new algorithm requires less computation since the peak point is simply determined with a single step matrix multiplication. In addition, a good robustness is obtained against external random disturbances on measured intensities since the algorithm is based upon least squares principles.

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White Light Emitting Diode with the Parallel Integration of InGaN-based Multi-quantum Well Structures (InGaN계 다중양자우물구조를 병렬 집적화한 백색광소자의 특성 연구)

  • 김근주;이기형
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.4
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    • pp.39-43
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    • 2004
  • The parallel multi-quantum well structures of blue and amber lights were designed and grown in metal-organic chemical vapor deposition by utilizing integration process on epitaxial layers. Samples were deposited for 5 periods-InGaN multi-quantum well layers for blue light emission and partially etched in order to regrow the 3 periods-InGaN multi-quantum wells for amber light. The blue and amber photoluminescence spectra were observed at the peak wavelengths of 475 and 580 nm, respectively. The chromatic coordinates of the white emitting diode were 0.31 and 0.34.

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