• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.48-48
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• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.314-318
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• 2010

We fabricated a plasma texturing for multi-crystalline silicon cells using reactive ion etching (RIE). Multi-crystalline Si cells have not benefited from the cost-effective wet-chemical texturing processes that reduce front surface reflectance on single-crystal wafers. Elimination of plasma damage has been achieved while keeping front reflectance to extremely low levels. We will discuss reflectance, quantum efficiency and conversion efficiency for multi-crystalline Si solar cell by each RIE process conditions.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.12 s.255
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• pp.1196-1202
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• 2006

A MEMS methanol reformer was fabricated and its performance was evaluated in the present study. Catalytic steam reforming of methanol was selected because the process had been widely applied in macro scale reformers. Conventional Cu/ZnO catalyst that was prepared by co-precipitation method to give the highest coating quality was used. The reactor structure was made by bonding three layers of glass wafers. The internal structure of the wafer was fabricated by the wet-etching process that resulted in a high aspect ratio. The internal surface of the reactor was coated by catalyst and individual wafers were fusion-bonded to form the reactor structure. The internal volume of the microfabricated reactor was $0.3cm^3$ and the reactor produced exhaust gas with hydrogen concentration at 73%. The production rate of hydrogen was 4.16 ml/hr that could generate power of 350 mW in a typical PEM fuel cell.

• Biotechnology and Bioprocess Engineering:BBE
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• v.8 no.4
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• pp.252-256
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• 2003

In this paper we describe the status of a silicon-based microelectrode for neural recording and an advanced neural interface. We have developed a silicon neural probe, using a combination of plasma and wet etching techniques. This process enables the probe thickness to be controlled precisely. To enhance the CMOS compatibility in the fabrication process, we investigated the feasibility of the site material of the doped polycrystalline silicon with small grains of around 50 nm in size. This silicon electrode demonstrated a favorable performance with respect to impedance spectra, surface topography and acute neural recording. These results showed that the silicon neural probe can be used as an advanced microelectrode for neurological applications.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.129-137
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• 1995

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.60-69
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• 1998

Polysilicon surface mdoification tecnique is developed to reduce the sticking of microstructures fabricated by micromachining. Modified anti-sticking grain holes are simply formed by two-step dry eth without additional photolithography nor deposition of thin films. Both process-induced sticking and in-use sticking are successfully reduced more than two times by adopting grain holed polysilicon substrate. A sticking model for cantilever beam is derived. This model includes bending moment stems from stress gradient along the thickness directionof structural polysilicon. Because the surface tension of rinse liquid and the surface energy of the solids to be stuk tend to decrease in recently developed anti-sticking techniques, the effect of stress gradient will play an important role to analyze the sticking phenomena. Effect of the temperature during post-release rinse and dry is modelled and verified experimentally. Based on developed anti-sticking polysilicon structure and the sticking model, sticking of microstructure, fabricated by simple wet process including sacrificial layer etch and rinse with deionized water without special equimpment for post-release rinse and dry was alleviated more than 3.5 times.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.164-171
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• 1996

We report the experimental resutls on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base structure. To characterize the output power, load-pull mehtod was employed. By characterizing the devices with HP8510C, we extracted the small-signal equivalent circuit. The HBTs were fabricated employing wet mesa etching and lift-off process of ohmic metals. the implementation of polyimide into the fabriction process was accomplished to obtain the lower dielectric constant resultig in significant reduction of interconnect routing capacitance. The fabricated HBTs with an emitter area of 6${\times}14{\mu}m^{2}$ exhibited current gain of 45, BV$_{CEO}$ of 10V, cut-off frequency of 30GHz and power gain of 1 3dBm. To extract the small signal equivalent circuit, the de-embedded method was applied for parasitic parameters and the calculation of circuit equations for intrinsic parameters.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.147-148
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• 1998

In this paper, we developed the process for depth-probe type silicon microelectrode arrays. The process consists of four mask steps only. The steps are for defining sites, windows, and for shaping probe using plasma etch from above, and for shaping using wet etch from below, respectively. The probe thickness is controlled by dry etching, not by impurity diffusion. We used gold electrodes with a triple dielectric system consisting of oxide/nitride/oxide. The shank of the probe taper from 200um to tens of urn tip and has 30 um thickness.

• 한국연소학회:학술대회논문집
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• 2006.10a
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• pp.235-241
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• 2006

Catalytic combustion is one of the suitable methods for micro power source due to high energy density and no flame quenching. Catalyst loading in the micro structured combustion chamber is one of the most important issues in the development of micro catalytic combustors. In this research, to coat catalyst on the chamber wall, two methods were investigated. First, $Al_2O_3$ was selected as a support of Pt and $Pt/Al_2O_3$ was synthesized through the alumina sol-gel procedure. To improve the coating thickness and adhesion between catalyst and substrate, heat resistant and water solvable organic-inorganic hybrid binder was used. Porous silicon was also investigated as a catalyst support for platinum. Through the parametric studies of current density and etching time, fabrication process of $1{\sim}2{\mu}m$ of diameter and about $25{\mu}m$ depth pores was confirmed. Coated substrates were test in the micro channel combustor which was fabricated by the wet etching and machining of SUS 304. Using $Pt/Al_2O_3$ coated substrate and Pt coated porous silicon substrate, conversion rate of fuel was over 95% for $H_2$/Air premixed gas.

• Journal of ILASS-Korea
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• v.16 no.1
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• pp.27-36
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• 2011

The impact force on the single and overlap region of twin spray was experimentally evaluated using visualization method in full cone type swirl nozzle spray. Visualization of spray was conducted to obtain the spray angle and breakup process. The photography/imaging technique, based on Particle Image Velocimetry (PIV) using high-speed camera, was adopted for the direct observation of droplet motion and axial velocity measurement, respectively. Droplet size was measured by Particle Motion Analyze System (PMAS). The purpose of this study is to provide fundamental information of spray characteristics, such as impact force, for higher etching factor in the practical wet etching system. It was found that the spray angle, axial velocity and impact force were increased with increasing the nozzle pressure while droplet size decreased with increasing the nozzle pressure. Droplet size increased as the distance from nozzle tip was decreased. The impact force of twin spray in the overlap region was about 63.29, 67.02, 52.41% higher than that of single spray at 40, 50 and 60 mm of nozzle pitch, respectively. Also, the nozzle pitch was one of the important factors in the twin spray characteristics.