• 제목/요약/키워드: wet etch process

검색결과 74건 처리시간 0.034초

p$^+$ Si 외팔보 구조를 이용한 광학 소자용 마이크로 구동기의 제작 (Fabrication of a Micro Actuator with p$^+$ Si Cantilevers for Optical Devices)

  • 박태규;양상식
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권5호
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    • pp.249-252
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    • 2001
  • The paper represents the design and fabrication of an electrostatic micro actuator with $p^+$,/TEX> Si cantilevers. The micro actuator consists of a plate suspended by four $p^+$,/TEX> silicon cantilevers and an electrode on a glass substrate. The $p^+$,/TEX> Si structure is fabricated by the boron diffusion process and the anisotropic wet etch process. The cantilevers of the micro actuator curl down because of the residual stress gradient in $p^+$,/TEX> silicon. When the electrostatic forec is applied to the $p^+$,/TEX> cantilevers, the vertical displacement of the plate can be achieved. The deflection of the cantilever due to the residual stress gradient and the vertical displacement by electrostatic force were calculated. The displacement of the plate was measured with a laser displacement meter for various input voltages and frequencies. The feasibility of the proposed micro actuator for the applications to optical pickup devices or optical communication devices was confirmed by the experiments.

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Improvement of haze ratio of DC-sputtered ZnO:Al thin films through HF vapor texturing

  • Kang, Junyoung;Park, Hyeongsik;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.319.1-319.1
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    • 2016
  • Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

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레이저 공정을 이용한 초전도 통신소자 제작과 고주파특성 연구 (Study on the synthesis and the frequency response of HTS microwave device fabricated by pulsed laser deposition)

  • 박주형;정영식;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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    • pp.288-290
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    • 1997
  • Pulsed laser ablation has been used to fabricate superconducting $YBa_2Cu_3O_{7-x}$(YBCO) thin films on MgO substrates. The epitaxial YBCO thin films were grown at $750^{\circ}C$ and oxygen partial pressure of 200 mTorr. The electrical property and the characteristics of the YBCO thin films have been studied by R-T measurement. scanning electron microscopy (SEM) and X-ray diffraction (XRD). A microstrip line resonator has been fabricated using YBCO superconducting thin films by photolithography and wet-etch process. The resonator has linear microstrip line separated by a gap of 0.278 mm. We observed a fundamental resonance peak at the frequency of 10.007 GHz.

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얕은 소오스/드레인 접합깊이가 deep submicron CMOSFET 소자 특성에 미치는 영향 (Dependence of deep submicron CMOSFET characteristics on shallow source/drain junction depth)

  • 노광명;고요환;박찬광;황성민;정하풍;정명준
    • 전자공학회논문지A
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    • 제33A권4호
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    • pp.112-120
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    • 1996
  • With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

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벌크 마이크로 머쉬닝에 의한 다결정 실리콘 압력센서 제작 관한 연구 (A Study on Fabrication of Piezorresistive Pressure Sensor)

  • 임재홍;박용욱;윤석진;정형진;윤영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.677-680
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    • 1999
  • Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

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점착방지를 위한 승화건조기의 설계방법 (Design Method for Sublimation Drying System for Prevention of Stiction)

  • 김종팔;이상우;전국진;조동일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 G
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    • pp.2550-2552
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    • 1998
  • The stiction phenomena poses a design constraint in surface micromachining by reducing the releasable size of the microstructure. This problem occurs during the fabrication process of surface micromachined microstructures during the wet etch of sacrificial layers. For the prevention of the sticking problem, the microsctructure is released by sublimation after the substitution of the sacrificial layer etchant with a sublimation material heated above its melting temperature. In the sublimation drying method, the sublimation materials such as p-dichlorobenzene, t-butyl alcohol, and cyclohexane are used. In this paper, a method for designing a sublimation drying system is developed, and its performance is experimentally evaluated.

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약물 전달용 전자력 마이크로 밸브의 설계 및 제작 (Design, Fabrication of Electromagnetic Microvalve for Drug Delivery Systems)

  • 임인호;이기정;윤현중;심우영;양상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1526-1527
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    • 2007
  • This paper presents the design, fabrication and experimental results of an electromagnetic microvalve for drug delivery systems. The microvalve consists of two silicon substrates with a silicone rubber diaphragm and a flow channel, a PDMS layer, and an electromagnetic actuator. Each substrate is fabricated by using the silicon wet etch, SU-8 mold process and $O_2$ plasma bonding.

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매엽식 방법을 이용한 웨이퍼 후면의 박막 식각 (Etching Method of Thin Film on the Backside of Wafer Using Single Wafer Processing Tool)

  • 안영기;김현종;구교욱;조중근
    • 반도체디스플레이기술학회지
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    • 제5권2호
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    • pp.47-49
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    • 2006
  • Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

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데이터 배선 용량 최소화를 위한 비정질 실리콘 박막 트렌지스터 배열의 최적화 설계와 구현 (Optimal Design of a-Si TFT Array for Minimization of Data-line Capacitance and Its Implementation)

  • 김창원;윤정기;김선용;김종효
    • 대한의용생체공학회:의공학회지
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    • 제29권5호
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    • pp.392-399
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    • 2008
  • Thin-film transistor (TFT) arrays for an x-ray detector require quite different design concept from that of the conventional active-matrix liquid crystal devices (AM-LCDs). In this paper anew design of TFT array which uses only SiNx for passivation layer is described to meet the detector performance and the product availability simultaneously. For the purpose of optimizing the design parameters of the TFT array, a Spice simulation was performed. As a result, some parameters, such as the TFT width, the data line capacitance, and the storage capacitance, were able to be fixed. The other parameters were decided within a permissible range of the TFT process especially the photolithography process and the wet etch process. Then we adapted the TFT array which had been produced by the proposed design to our prototype model (FDXD-1417 and evaluated it clinically by comparing with a commercial model (EPEX, Hologic, Beford, USA). The results say that our prototype model is slightly better than EPEX system in chest PA images. So we can prove the technical usefulness and the commercial values of the proposed TFT design.

유리기판 박막화를 위한 습식공정에서 식각액 성분의 영향 (Effects of Ingredients of Wet Etchant on Glass Slimming Process)

  • 신영식;이원규
    • Korean Chemical Engineering Research
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    • 제58권3호
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    • pp.474-479
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    • 2020
  • 유리기판의 박막화를 위한 식각액을 제조하였고, 습식 식각액의 주성분으로 HF를 사용하였다. HF를 기본으로 한 식각액에 HCl, HNO3, H2SO4와 같은 강산과 구연산과 같은 카르복실산 그리고 여러 종류의 아미노산을 첨가물로 각각 사용한 식각액으로 유리의 식각속도와 표면형상의 변화를 측정하였다. 강산의 종류와 상관없이 첨가량이 증가함에 따라 선형적으로 유리의 식각속도가 증가하였으며 유리표면의 슬러지 제거효과도 나타내었다. HCl이 함유된 식각액이 식각속도의 증가율과 슬러지 제거 효과에서 다른 강산보다 효율적인 결과를 보였다. 카르복실산의 첨가는 식각속도에 영향을 크게 주지 않으나 슬러지 제거효과를 보였다. 하지만 아미노산을 첨가한 경우에는 식각속도의 변화와 슬러지 제거 효과가 크지 않았다.