• 전자공학회논문지A
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• 제33A권4호
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.677-680
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• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2550-2552
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• 1998

The stiction phenomena poses a design constraint in surface micromachining by reducing the releasable size of the microstructure. This problem occurs during the fabrication process of surface micromachined microstructures during the wet etch of sacrificial layers. For the prevention of the sticking problem, the microsctructure is released by sublimation after the substitution of the sacrificial layer etchant with a sublimation material heated above its melting temperature. In the sublimation drying method, the sublimation materials such as p-dichlorobenzene, t-butyl alcohol, and cyclohexane are used. In this paper, a method for designing a sublimation drying system is developed, and its performance is experimentally evaluated.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권5호
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• pp.249-252
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• 2001

The paper represents the design and fabrication of an electrostatic micro actuator with $p^+$,/TEX> Si cantilevers. The micro actuator consists of a plate suspended by four $p^+$,/TEX> silicon cantilevers and an electrode on a glass substrate. The $p^+$,/TEX> Si structure is fabricated by the boron diffusion process and the anisotropic wet etch process. The cantilevers of the micro actuator curl down because of the residual stress gradient in $p^+$,/TEX> silicon. When the electrostatic forec is applied to the $p^+$,/TEX> cantilevers, the vertical displacement of the plate can be achieved. The deflection of the cantilever due to the residual stress gradient and the vertical displacement by electrostatic force were calculated. The displacement of the plate was measured with a laser displacement meter for various input voltages and frequencies. The feasibility of the proposed micro actuator for the applications to optical pickup devices or optical communication devices was confirmed by the experiments.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.268-270
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• 2004

This paper reports a novel masking method with various mask materials for wet etching of glass. Various mask materials such as Cr/Au, Ti/Au, Polyimide and thick SU-8 photoresist were investigated for borosilicate glass (Borofloat33) etching in concentrated hydrofluoric acid (48% HF). Polyimide and thick SU-8 photoresist are not suitable as masking material due to its poor adhesion to glass surfaces. Titanium has good adhesion is suitable as the first layer to make multi-protective layers. The best protection was obtained with a combination of Ti/Au, polyimide and Ti/Au as masking material with etch depth of $350{\mu}m$ achieved.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1526-1527
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• 2007

This paper presents the design, fabrication and experimental results of an electromagnetic microvalve for drug delivery systems. The microvalve consists of two silicon substrates with a silicone rubber diaphragm and a flow channel, a PDMS layer, and an electromagnetic actuator. Each substrate is fabricated by using the silicon wet etch, SU-8 mold process and $O_2$ plasma bonding.

• Current Applied Physics
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• 제18권11호
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• 마이크로전자및패키징학회지
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• 제19권1호
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• pp.39-45
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• 2012

Cu-Cu 패턴의 직접접합 공정을 위하여 Buffered Oxide Etch(BOE) 및 Hydrofluoric acid(HF)의 습식 조건에 따른 Cu와 $SiO_2$의 식각 특성에 대한 평가를 수행하였다. 접촉식 3차원측정기(3D-Profiler)를 이용하여 Cu와 $SiO_2$의 단차 및 Chemical Mechanical Polishing(CMP)에 의한 Cu의 dishing된 정도를 분석 하였다. 실험 결과 BOE 및 HF 습식 식각 시간이 증가함에 따라 단차가 증가 하였고, BOE가 HF보다 더 식각 속도가 빠른 것을 확인하였다. BOE 및 HF 습식 식각 후 Cu의 dishing도 식각시간 증가에 따라 감소하였다. 식각 후 산화막 유무를 알아보기 위해 Cu표면을 X-선 광전자 분광법(X-ray Photoelectron Spectroscopy, XPS)를 이용하여 분석 한 결과 HF습식 식각 후 BOE습식 식각보다 Cu표면산화막이 상대적으로 더 얇아 진 것을 확인하였다.

• 한국결정성장학회지
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• 제18권3호
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• pp.101-104
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• 2008

GaN films were grown on the vertical and horizontal reactors by the hydride vapour phase epitaxy (HVPE). The structural and optical characteristics of the GaN films were investigated depending on the reactor-type. GaN epilayers were characterized by double crystal X-ray diffraction (DC-XRD), transmission electron microscopy (TEM) and photoluminescence (PL). Surface defects of two kinds of the GaN films were revealed by the wet chemical etching method, using $H_3PO_4$ acid at $200^{\circ}C$ for 8 minutes. Hexagonal etch pits were analyzed by optical microscopy and SEM. Etch pit densities were calculated to be approximately $1.4{\times}10^7$ and $1.2{\times}10^6\;cm^{-2}$ for GaN layers grown on horizontal and vertical reactors, respectively. Those results show GaN grown in the vertical reactor having a better quality of optical properties and crystallinity than that in the horizontal reactor.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.47.2-47.2
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• 2010

텍스쳐링은 태양전지 표면에 어떠한 "요철"을 만들거나 거칠게 만들어 빛이 반사되는 면을 최대한 늘리는 구조를 만드는 공정으로 anti-reflection coating과 같이 태양전지에 입사되는 빛의 반사를 최소화 시키는데 그 목적이 있다. 단결정 실리콘 웨이퍼의 경우 표면에 피라미드 구조를 형성하는 것이 텍스쳐링 공정인데, 수산화칼륨과 이소프로필 알콜의 혼합용액으로 인해 식각되는 웨이퍼 표면이 작은 "pellet"으로 시작하여 그 크기와 수가 점점 증가하여 피라미드의 형태를 갖춰가는 방법으로 진행된다. 이와 같은 텍스쳐링 공정의 성패를 좌우하는 가장 큰 이슈는 "식각률"이다. 이 식각률에 영향을 주는 인자는 그 종류가 많으나 온도, 시간, KOH 농도(비율) 세 가지로 압축할 수 있다. 또 다른 요소인 Bath 내 chemical flow 및 Bubbling은 정량화하기 어렵고, 이용 장비가 변경되면 공정 조건 또한 변경되기 때문이다. 본 논문에서는 단결정 실리콘 웨이퍼에 적용하는 최적의 텍스쳐링 조건을 수립하기 위해 주요 공정변수를 온도, 시간, KOH 농도로 정하고, 다구치 방법을 사용하여 주요공정변수의 범위를 정하였으며, 보다 완벽한 강건설계를 위하여 3인자 3수준의 망소특성으로 설계하였다. 그 결과 반사율과 식각률의 경향성을 파악하여 주요 변수들 간 최적의 조건을 찾을 수 있었다.