• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.224-230
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• 1998

The relationships between R-H curves of gaint magnetoresistance (GMR) spin valve trilayer films and M-H curves of each magnetic layer consisting of the trilayer films were analyzed and simple formula representing the relations between the curves were suggested for theoretical analysis and study of magnetoresistance (MR) in those films, especially where the MR is from the difference of coercivity. Using two kinds of NiFe/Cu/Co films, which had been deposited on Cu(50 $\AA$)/Si(111, 4$^{\circ}$ tilt-cut) and Cu(50 $\AA$)/glass, R-H and M-H curves were measured and compared with the calculated ones, which were obtained by appying the M-H curves of single NiFe and Co films, deposited on the same substrates, to the previously reported single-domain and multi-domain models. The calcuated ones were well consistent with the measured ones and the suggested simple relationships between R-H and M-H curves are thought to be very useful for the deep understanding of MR behavior and the reasonable approach to improve MR properties in GMR spin valve trilayer films.

• Geophysics and Geophysical Exploration
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• v.22 no.3
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• pp.160-167
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• 2019

Resistivity inversion result may be distorted if the seepage line fluctuation within central core with the change of reservoir water level as well as the conductivity of the reservoir water is not taken into consideration because the reservoir dike is composed of three-dimensional (3D) resistivity structure. Consequently, to accurately analyze the resistivity changes inside the reservoir dike according to the change of reservoir water level, 3D electrical resistivity modeling for the 2D survey line considering topography and physical properties of dam components was carried out. In addition, 2D inversion was performed with the simulated 2D resistivity data for a given 3D model in order to compare it with the inversion result of real field data. For 283 reservoirs in Korea, 2D inversion results for the simulated 2D data and field 2D resistivity data were compared. Finally, the reservoirs with an inversion ratio of 50% or less were selected as reservoirs that require further precise investigation.

• 한국노년학
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• v.31 no.2
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• pp.303-315
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• 2011

The purpose of this study was to investigate effect of resistance training on BMD and bone metabolism related markers in aging rats. Thirty male Spraugue-Daweley rats were divided into sedentary (CON; n=10 ) non-load resistance trained(NLRTG; n=10), and load resistance trained(LRTG; n=10) groups at the age of 64 weeks. The rats in the resistance training groups((NLRTG and LRTG) performed the tower climbing exercise 4 times a week. The LRTG groups were conditioned to climb a vertical ladder with weights appended to their tail 4 days/wk for 12 wks. After 12 weeks of exercise, serum osteocalcin, bone mineral density (BMD), breaking force, ash, Ca, and P in the femur were measured. After training, serum osteocalcin (OC) was significantly (p < 0.05) higher in both LRTG and NLRTG when compared to Control. Right femur BMD was significantly (p < 0.05) greater for LRTG when compared to both NLRTG and Control with no significant difference between NLRTG and Conrtol. The breaking force of femur was significantly (p < 0.05) greater for LRTG and NLRTG when compared to Control. The Ash, Ca, content of femur were significantly increased in resistance training groups than control group. These results suggest that the increase in bone mineral density induced by resistance training is mediated by changes in bone microarchitecture as well as training intensity and osteocalcin.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.46-54
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• 1984

A silicon-gate n-well CMOS process with 3 $\mu$m gate length was developed and its possibility for the applications was discussed,. Threshold voltage was easily controlled by ion implantation and 3-$\mu$m gate length with 650 $\AA$ oxide shows ignorable short channel effect. Large value of Al-n+ contact resistance is one of the problems in fabrications of VLSI circuits. Transfer characteristics of CMOS inverter is fairly good and the propagation delay time per stage in ring oscillator with layout of (W/L) PMOS /(W/L) NMOS =(10/5)/(5/5) is about 3.4 nsec. catch-up occurs on substrate current of 3-5 mA in this process and critically dependent on the well doping density and nt-source to n-well space. Therefore, research, more on latch-up characteristics as a function of n-well profile and design rule, especially n+-source to n-well space, is required.

• Korean Journal of Optics and Photonics
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• v.30 no.5
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• pp.193-196
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• 2019

The design and control of thermal flow is important for the operation of high-power laser diodes (LDs). It is necessary to analyze and improve the thermal bottleneck near the active layer of an LD. As the error in prediction of the thermal resistance of an LD is large, typically due to the hyperbolic increase and saturation to linear increase of the thermal resistance as a function of thickness, it is helpful to use a simple, modified divergence model for the improvement and optimization of thermal resistance. The characteristics of LDs are described quite well, in that the values for simulated thermal resistance curves and the thermal cross section followed are almost the same as the values from the model function. Also, the thermal-cross-section curve obtained by differentiating the thermal resistance is good for identifying thermal bottlenecks intuitively, and is also fitted quite well by the model proposed for both a typical LD structure and an improved LD with thin capping and high thermal conductivity.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.27-34
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• 2017

We investigated the feasibility of parylene F usage as an intermediate layer between a polydimethylsiloxane (PDMS) substrate and an Au thin-film interconnect as well as the swelling effect of PDMS substrate on the stretchable deformability of an Au thin film. The 150-nm-thick Au film, which was sputtered on a PDMS substrate without a parylene F layer, exhibited an initial resistance of $11.7{\Omega}$ and an overflow of its resistance at a tensile strain of 12.5%. On the other hand, the Au film, which was formed with a 150-nm-thick parylene F layer, revealed an much improved resistance characteristics: $1.21{\Omega}$ as its initial resistance and $246{\Omega}$ at its 30% elongation state. With swelling of PDMS substrate, the resistance of an Au film substantially decreased to $14.4{\Omega}$ at 30% tensile strain.

• The Journal of Engineering Geology
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• v.9 no.1
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• pp.59-68
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• 1999

To clarify the geological structure of Yangsan fault around Sangchon-ri in the southern part of Kyungsang Basin the resistivity (dipole-dipole profiling) and VLF surveys carried out on the four profiles, crossing the inferred trace of the fault. The resistivity contrast across the fault is clearly shown on the profiles: higher resistivity and lower resistivity on the east and west, respectively. It is most likely from the uplift of the granitic bedrock on the east park due to the strike-fault raulting with vertical movement. The zero-crossing points of VLF anomalies, associated with near-surface fracture zone, are found to well correlate with the resistivity boundaries from the dipole-dipole profiling. Consequently, southern segment of Yangsan fault (at Sangchon-ri area) is interpreted to be vertically developed strike-slip fault with a difference more than 10m depth of basement rock at both sides.

• Journal of the Korean Geotechnical Society
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• v.24 no.12
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• pp.53-63
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• 2008

In this study, the cone tip resistances of cemented sand are measured by performing a series of miniature cone penetration tests in large calibration chamber, and the relations with constrained modulus, unconfined compressive strength, and shear strength of cemented sand are suggested. Experimental results show that both the cone tip resistance and constrained modulus of sand increase with increasing cementation effect as well as relative density and confining stress. However, it is observed that the relative density and confining stress have more significant influence on cone tip resistance than constrained modulus of cemented sand. Since the cone penetration into the ground induces the damage of cementation, the cone tip resistance can't properly reflect the cementation effect of sand. An analysis based on the constrained modulus shows that the measured cone tip resistance underestimates the deformation modulus of cemented sand by about $70{\sim}85%$. In addition, this study establishes various relationships among the above soil properties from the regression analysis.

• Journal of Venture Innovation
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• v.4 no.3
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• pp.89-108
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• 2021

This study purposed to investigate the double mediating effect of the resistance and the job stress between the acceptance and the flourishing in organizational change. The survey has executed on 300 employees. The acceptance of organizational change was positively related to the flourishing, negatively to the resistance of organizational change and the job stress. The resistance of organizational change was positively related to the job stress, negatively to the flourishing. The job stress was negatively related to the flourishing. The resistance of organizational change was meditating the acceptance to change and the job stress, and the acceptance to change and the flourishing. The job stress on the acceptance to change and the flourishing partially mediated as well as the resistance to change and the flourishing. The resistance to change and the job stress double meditated the acceptance to change and the flourishing. The implications, limitations of this study for future research were discussed.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.29-33
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• 1993

Magnetoresistance was studied for the ferromagnetic tunneling junction in $Permalloy/Al_{2}O_{3}/Co$ prepared by evaporation in a vacuum of $1{\times}10^{-6}$Torr. We measured voltage-current characteristic and magnetic valve effect of prepared ferromagnetic tunneling junction sample. We investigated field-dependency of tunnel resistance by Wheat-stone bridge method and measured magnetic hysteresis curve by vibrating sample magnetometer. The tunneling is confirmed by measuring voltage-current characteristic. The hysteresis curve of magnetoresistance corresponds well with that of magnetization. The magnetoresistance ratio ${\Delta}R/R$ is 0.6% at room temperature.