• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

• 한국안광학회지
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• 제5권1호
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• pp.1-6
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• 2000

본 연구는 안경렌즈와 안광학계를 광학계로 이루고 있는 합성광학계에 wavelength는 3가지로 ${\omega}{\upsilon}_1=0.588{\mu}$, ${\omega}{\upsilon}_2=0.486{\mu}$ ${\omega}{\upsilon}_3=0.656{\mu}$로 하였고 Entrance Beam Radius(mm)는 1mm로 Field angle(deg)는 5.7296e-0.5, Image Aperture는 0.053055 mm, Exit Aperture는 0.903711 mm로 Reflective focal length는 25.181514 mm, Petzval radius는 -19.21839 mm, n=1.523의 조건에서 OSLO를 이용하여 spot size, focus shift, optical focus를 산출하였다. spot size는 후면곡률반경이 1 mm~30 mm까지는 0.002 mm~0.07 mm size가 다음과 같이 큰 수치로 나타났고 50 mm 이상에서는 거의 비슷한 0.0005 mm~0.002 mm가 나왔고 focus shift에서는 3가지 종류의 렌즈에서 50 mm가 focus shift가 적게 나타났고 전체적인 경향은 1 mm~15 mm 까지는 수치가 높다가 25 mm까지는 낮아지다가 다시 높아지는 양상을 보였으며 optical focus는 100 mm가 가장 좋았고 100 mm 렌즈를 후면곡률반경으로 하여 optical focus 산출하였으며 산출한 optical focus를 최적화한 결과 값이 $60{\pm}1mm$로 나타났다.

• 한국의류학회지
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• 제11권3호
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• pp.25-32
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• 1987

The purpose of this study is to investigate optical behaviour of coloring matter of gromwell -extracted by water, acetic acid/methanol, and the other solvents. The results were as following: UV, VIS spectra of the solution of coloring matter of gromwell extracted by water at below $80^{\circ}C$ did not reveal in the range of the visible light wavelength and coloring matter of gromwell decomposed to blue particle at $95^{\circ}C$. The solution extracted by acetic acid/methanol was tinged with reddish purple and its spectra shifted to the longer wavelength according to increase of the solvent temperature. The color of the solution extracted by water became extinct as time went by, but that extracted by acetic acid/methanol kept up original color. In case of dried gromwell, extraction by acetic acid/methanol was easier than by water, and variation of spectra did not appear but showed hypochromic shift.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1045-1057
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• 2009

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.895-897
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• 2008

ZnO films were fabricated using rf-magnetron sputter deposition process with different $N_2$ ambient. N-content in N-doped ZnO films was less than 1%. The wavelength of the highest intensity PL peak of N-doped ZnO was shifted to higher wavelength with increasing $N_2$ flow rate in the deposition ambient. These results indicated that the optical property of ZnO was significantly affected by the defect level created by doping with a very small amount of N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1094-1097
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• 2003

In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.127-130
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• 2005

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy and electroluminescence measurements. As the quantum well growth time was changed, the wavelength was varied from 451 to 531 nm. In the varied current conditions, the blue LED with the InN MQW structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN MQW structures do not show the color temperature changes with the variations of applied currents.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.76-77
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• 2000

Very narrow transmission peaks are generated by the phase-shifted fiber Bragg grating with phase-shift region. The width of the transmission peaks are about ～0.5nm. The characteristics of multi-wavelength source using the phase-shifted fiber Bragg grating are designed and analyzed. The source with two and three transmission peaks is analyzed (omitted)

• Journal of the Optical Society of Korea
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• 제6권1호
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• pp.5-12
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• 2002

A novel interrogation scheme to detect fine Bragg wavelength shift using a long period fiber grating pair with erbium-doped fiber inserted between the two gratings is reported. The technique is shown to feature high resolution and much more immunity to temperature perturbation compared to the conventioned Mach-Zehnder interferometer demodulation system. For quasi-static strain measurement, this approach provides high wavelength resolution of 0.05 pm that corresponds to 41.7 ne in strain and $3.8 $\times$ 10^{-3}$$^{\circ}C$ in temperature. This interrogation system is also employed in dynamic measurement to obtain the minimum detectable strain perturbation of ~ 8.76 ne/H $z^{{\frac}{1}{2}}$ at 100 Hz. Moreover, this interrogation system has prominent thermal stability. This thermal stability comes from the fact that two arms of the interferometer, the core and cladding in erbium-doped fiber, are exposed to nearly the same environment .

• 전자공학회논문지A
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• 제30A권9호
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• pp.24-29
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• 1993

The 607 nm GaInP/AlInP distributed bragg reflector (DBR) lasers using the second order gratings period of 184.7 nm were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional holographic method. GaInP/AlInP DBR lasers show single mode operations up to 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K is observed. No mode hopping was found in the temperature ranging from 120 to 165K.