• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.74-82
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• 2015

As the complexity of an electronic device and the reduction of its operating voltage is progressing, susceptibility test of the chip and module for internal or external noises is essential. Although the immunity compliance of the chip was served with IEC 62132-4 Direct Power Injection method as an industry standard, in fact, EM immunity of the chip is influenced by their Power Domain Network (PDN). This paper evaluates the EM noise tolerance of a PLL and compares their noise transfer characteristics to the PLL on various PCB boards. To make differences of the PDNs of PCBs, various PCBs with or without LDO and with several types of capacitors are tested. For evaluation of discrepancies between EM characteristics of an IC only and the IC on real boards, the analysis of the noise transfer characteristics according to the PDNs shows that it gives important information for the design having robust EM characteristics. DPI measurement results show that greatly improved immunity of the PLL in the low-frequency region according to using the LDO and a frequency change of the PLL according to the DPI could also check with TEM cell measurement spectrum.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.146-150
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• 2002

1.55${\mu}{\textrm}{m}$ PnpN optical thyristor as a smart optical switch has potential applications in advanced optical communication systems. PnpP optical thyristors operating at 1.55${\mu}{\textrm}{m}$ are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum well (MQW) for the active n- and p-layers. The thyristors show sufficiently nonlinear s-shape I-V characteristics and spontaneous emission. In the OFF-state, the device has a high-impedance up to switching voltage of 4.03(V). On the other hand, it has low-impedance and emits spontaneous light as a light-emitting diode in the ON-state voltage of 1.77(V), and switching voltage is changed under several light input conditions. It can be used as a header processor in optical asynchronous transfer mode (ATM), as a hard limiter in optical code division multiple access (CDMA) and as a wavelength converter in optical WDM systems.

• Journal of the Korean Institute of Telematics and Electronics
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• v.4 no.4
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• pp.13-18
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• 1967

Since all the poles of the open circuit voltage transfer function of the trigonometric, linear, passive RC circuits exist on the negative real axis of s-plane, its transient response to the unit step input is monotonic. This satisfies the necessary conditions for the applicability of Elmore's method which had been developed originally for the transient analysis of lumped circuit in computing the rise time and delay time of the trigonometric distributed RC circuits. This paper describes the computing method of rise and delay times of the trigonometric distributed RC circuit. The analysis shows that the transient response of this kind circuit depends only upon the time constant and distance angle $\theta$. As $\theta$ is increased, the rise and delay titles are increased non-linearly.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.848-850
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• 2002

Single phase induction motor is directly used usual source, it can be a source of an appliance such as mechanical fan, refrigerator, washing machine, etc. Especially capacitor-run single phase induction motor is suitable to make more inexpensive and high efficient products because it is more high efficiency, and good to start than other single phase induction motors. Generally, voltage and current of capacitor-run single phase induction motor transfer to the part of positive phase and negative phase based on two motor theory. In this paper, we simulate the torque characteristics to capacitance variation from single phase induction motor's equivalent circuit. Through the test using the real motor, we compare and investigate the maximum torque of run state related with capacitance and the adequacy of the converted model.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.419-424
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• 1997

It is well known that the metallo-phthalocyanines (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$ as well as are chemically and thermally stable. Therefore, lots of MPcs have been studied as the potential chemical sensor for NO$_2$gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy)copper-phthalocyanine were prepared by Langmuir-Blodgett method and characterized by using UV-VIS absorption spectroscopy and ellipsometry. Optimal transfer condition of LB films was investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$gas as a function of film thickness, temperature and concentration were discussed.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.594-596
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• 1996

Static power converters can be analyzed by means of available circuit simulation software packages such as PSPICE. This paper proposes the macro models developing technique for three-phase power converters using the transfer function approach. Also, these models are based on converter switching functions rather than actual circuit configuration. In this approach, VSI(Voltage Source Inverter) and CSI(Current Source Inverter) are simulated as multiport networks avoiding nonlinear macromodels of the power switches.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.25-26
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• 2011

In this paper, we investigated the effect of various annealing processes on the electrical characteristics of oxide thin film transistors (TFTs). When we annealed the TFT devices before and after source/drain (S/D) process, we could observe the different electrical characteristics of oxide TFTs. When we annealed the TFTs after deposition of transparent indium zinc oxide S/D electrodes, the annealing process decreased the contact resistance but increased the resistivity of S/D electrodes. The field effect mobility, subthreshold slope and threshold voltage of the oxide TFTs annealed before and after S/D process were 5.83 and 4.47 $cm^2$/Vs, 1.20 and 0.82 V/dec, and 3.92 and 8.33 V respectively. To analyze the differences, we measured the contact resistances and the carrier concentrations using transfer length method (TLM) and Hall measurement.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.107-109
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• 2003

Single phase induction motor is directly used usual source, it can be a source of an appliance such as mechanical fan, refrigerator, washing machine, etc. Especially capacitor-run single phase induction motor is suitable to make more inexpensive and high efficient products because it is more high efficiency, and good to start than other single phase induction motors. Generally, voltage and current of capacitor-run single phase induction motor transfer to the part of positive phase and negative phase based on two motor theory. In this paper, we simulate the torque characteristics to capacitance variation from single phase induction motor's equivalent circuit. Through the test using the real motor, we compare and investigate the maximum torque of run state related with capacitance and the adequacy of the converted model.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.2
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• pp.264-268
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• 2009

In this paper, the two PCB design method results of boost converters are simulated with same circuit device parameters. One is modeled with microstrip structure and the other is modeled two layers structure without reference plane. Between devices of each circuit are routed 5 centimeters. When the switching frequency is operated 100kHz, the overshoot by signal reflection and the noise characteristics by frequency spectrum for the output voltage and current of the power switch is compared and analyzed using simulation.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.163-169
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• 1992

A new analytical expression for the temperature variation characteristics of hydrogenerated amorphous silicon thin film transistors(a-si:H TFT), between 223K and 433K, is presented and experimentally verified. The results show that the experimental transfer and output characteristics at several temperatures are easily modeled between -5$0^{\circ}C$ and 9$0^{\circ}C$. The model is based on three functions obtained from the experimental data of IS1DT versus VS1GT. Theoretical results confirm the simple form of the model in terms of the device geometry. It was determined that as the temperature increased, the saturated drain current increased and, at a fixed gate voltage, the device saturated at increasingly larger drain voltages while the threshold voltages decreased.