• Title/Summary/Keyword: voltage spike

Search Result 72, Processing Time 0.024 seconds

Implementation of Neuromorphic System with Si-based Floating-body Synaptic Transistors

  • Park, Jungjin;Kim, Hyungjin;Kwon, Min-Woo;Hwang, Sungmin;Baek, Myung-Hyun;Lee, Jeong-Jun;Jang, Taejin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.17 no.2
    • /
    • pp.210-215
    • /
    • 2017
  • We have developed the neuromorphic system that can work with the four-terminal Si-based synaptic devices and verified the operation of the system using simulation tool and printed-circuit-board (PCB). The symmetrical current mirrors connected to the n-channel and p-channel synaptic devices constitute the synaptic integration part to express the excitation and the inhibition mechanism of neurons, respectively. The number and the weight of the synaptic devices affect the amount of the current reproduced from the current mirror. The double-stage inverters controlling delay time and the NMOS with large threshold voltage ($V_T$) constitute the action-potential generation part. The generated action-potential is transmitted to next neuron and simultaneously returned to the back gate of the synaptic device for changing its weight based on spike-timing-dependent-plasticity (STDP).

CORRELATIONS BETWEEN HIPPOCAMPAL THETA RHYTHM AND INTRACELLULAR CHARACTERISTICS OF PYRAMIDAL NEURONS (해마 theta 리듬과 pyramidal neuron의 세포내 특성과의 상관관계)

  • Kwon, Oh-Heung;Kim, Young-Jin;Nam, Soon-Hyeun;Kim, Hyeun-Jung;Lee, Man-Gee;Cho, Jin-Hwa;Choi, Byung-Ju
    • Journal of the korean academy of Pediatric Dentistry
    • /
    • v.25 no.4
    • /
    • pp.671-682
    • /
    • 1998
  • Electrophysiological phenomena of pyramidal cells in the CA1 area of the dorsal hippocampus were recorded from and filled with neurobiotin in anesthetized rats. The electropharmacological properties of membrane as well as the cellular-synaptic generation of rhythmic slow activity (theta) were examined. The intracellular response characteristics of these pyramidal cells were distinctly different from responses of interneurons. Pyramidal cells had a high resting membrane potential, a low input resistance, and a large amplitude action potential. A afterhyperpolarization was followed a single action potential. Most of pyramidal cells did not display a spontaneous firing. Pyramidal cells displayed weak inward rectification and anodal break excitation. The slope of the frequency-current relation was 53.4 Hz/nA for the first interspike interval and 15.9 Hz/nA for the last intervals, suggesting the presence of spike frequency adaptation. Neurobiotin-filled neurons showed pyramidal morphology. Cells were generally bipolar dendritc processes ramifying in stratum lacunosum-moleculare, radiatum, and oriens. Commissural stimulation discharged pyramidal cells, followed by excitatory and inhibitory postsynaptic potentials (EPSPs and IPSPs). The frequency of theta-related membrane potential oscillation was voltage-independent in pyramidal neurons. At strong depolarization levels (less than 30 mV) pyramidal cells emitted sodium spike oscillation, phase-locked to theta. The observations provide direct evidence that theta-related rhythmic hyperpolarization of principal cells is brought by the rhythmically discharging interneurons. Furthermore, the findings in which interneurons were also paced by rhythmic inhibitory postsynaptic potentials during theta suggest that they were periodically hyperpolarized by their GABAergic septal afferents.

  • PDF

A study on the switching character and loss of power semiconductor device (전력용 반도체 디바이스의 스위칭 특성과 손실에 관한 연구)

  • Kim, Yong-Ju;Han, Suk-Woo;Ma, Young-Ho;Kim, Han-Sung;Yu, Gwon-Jong
    • Proceedings of the KIEE Conference
    • /
    • 1990.11a
    • /
    • pp.263-266
    • /
    • 1990
  • In order to high-respone and high-reliability of devices, it depended upon how we can increase the high-frequency of the Inverter, UPS and it's application. but using high-frequency of self turn-off devices, it is important to reduce switching device loss and spike voltage of turn off. This paper proposed new methode about computer simulation of device loss also experimental results with switching device characteristic are presented.

  • PDF

A Effect of Saturable Reactor-Resistor Pair on High Power SCR Chopper (대전력 SCR 초퍼에서 가포하리액터-저항짝의 효과)

  • 강민구;조규형
    • The Transactions of the Korean Institute of Electrical Engineers
    • /
    • v.37 no.7
    • /
    • pp.442-447
    • /
    • 1988
  • Saturable reactor-resistor pair is proposed as a part of snubber and applied to a hard commutation chopper. SCR turn off process is modeled to simulate the hard commutation chopper. State equations are derived for each mode of the chopper and they are solved by Runge-Kutta 4th order method. It is shown that the reverse voltage spike and reverse dv/dt can be minimized by applying saturable reactor-resistor pair to the chopper which controls peak reverse recovery current and damping factor. Saturable reactor-resistor pair can be used to reduced SCR power loss and value of snubber capacitor and can be applied to high power thyristor devices.

  • PDF

A Diode Bridge-type ZVT Inverter for Induction Motor Drive Application (유도 전동기 구동용 다이오드 브릿지-타입 ZVT 인버터)

  • 이성룡;고성훈;권순신;송인석
    • Proceedings of the KIPE Conference
    • /
    • 1999.07a
    • /
    • pp.295-298
    • /
    • 1999
  • In this paper, the diode bridge-type ZVT(Zero-Voltage Transition) inverter is proposed. It consists of one auxiliary switch, three resonant inductors and six blocking diodes. So, the advantage of the proposed topology is the reduction of the auxiliary switch. The topology of the proposed ZVT inverter is analyzed with a description of the control conditions based on the load current. Therefore, this paper two control algorithms were discussed. A variable resonant pattern control algorithm by using load current feedback and a resonant period control algorithm by using resonant inductor current feedback is proposed in order to achieve the ZVT switching condition in full control range and the reducing current spike main switches cause by reverse recovery problem.

  • PDF

Analysis of the Time Domain Reflectometry for the Monitoring of Rock Displacement (시간 영역 반사법에 의한 암반 변위의 계측 기술 분석)

  • 정소걸
    • Tunnel and Underground Space
    • /
    • v.5 no.1
    • /
    • pp.70-76
    • /
    • 1995
  • Two types of deformations can occur on the cable during the monitoring of the rock displacement by the time domain reflectometry. One is the impedance model for tensile deformation, and the other is the capacitance model for the shear deformation. The former gives a response signal with a gradual change in the amplitude of the reflected voltage, meanwhile the latter produces a signal with a blunted spike. The resolution of the TDR can be improved to 0.125% using calibration crimps on the cable of 60 meters long. It is recommended that the diameter of the cable should be 18 mm at least in order to induce a better reflected pulse without any open-circuit. The actual TDR technique cannot characterize the type and the magnitude of rock displacement quantitatively. Systematic investigation of the TDR parameters, such as the exact of cable diameter, cable length, number of crimps, combination of shearing and extension, and environment of the TDR equipment, will be able to improve the resolution to 0.01 mm.

  • PDF

Design of an Optimum Thyristor Snubber Circuit with Turn-off Model (다이리스터의 Turn-off 모델을 이용한 최적 Snubber 회로 설계)

  • Kim, Kwon-Ho;Moon, Yong-Hyun;Song, Joong-Ho;Chy, Ick;Kim, Kwang-Bae
    • Proceedings of the KIEE Conference
    • /
    • 1993.07b
    • /
    • pp.773-776
    • /
    • 1993
  • The thyristor turn-off model plays an important part in the design of thyristor snubber circuit. However, it is difficult to determine the thyristor turn-off characteristics. In this paper two methods to establish the simple thyristor turn-off model are proposed based on the reverse recovery characteristics given in the data sheets. Using the simple thyristor turn-off model, the optimum thyristor snubber circuit design procedures are presented considering maximum voltage spike, maximum reverse dv/dt, and turn-off loss.

  • PDF

Converter Simulation by the Micro Modeling and Macro Modeling of GTO Thyristor (GTO 다이리스터의 미시적 모델링과 거시적 모델링에 의한 변환기 시뮬레이션)

  • Seo, Young-Soo;Baek, Dong-Hyun;Kim, Young-Chun;Cho, Moon-Taek;Seo, Soo-Ho
    • Proceedings of the KIEE Conference
    • /
    • 1993.07b
    • /
    • pp.781-783
    • /
    • 1993
  • The GTO model is based on the Ebers-Moll equation extened to include the three-junction devices and a detailed description of the implementation of the model equation as well as defferent tests are discussed. Problems to be considered for the snubber design, such as voltage spike reduction, maximum GTO anode current, and switching power, were discussed using the calculation model. The macro model is very useful for simulation of GTO circuit and high power circuit switch in high frequency and complex structure.

  • PDF

Characteristic Intracelluar Response to Lidocaine And MK-801 of Hippocampal Neurons: An In Vivo Intracellular Neuron Recording Study

  • Choi, Byung-Ju;Cho, Jin-Hwa
    • The Korean Journal of Physiology and Pharmacology
    • /
    • v.2 no.3
    • /
    • pp.297-305
    • /
    • 1998
  • This study used in vivo intracellular recording in rat hippocampus to evaluate the effect of lidocaine and MK-801 on the membrane properties and the synaptic responses of individual neurons to electrical stimulation of the commissural pathway. Cells in control group typically fired in a tonic discharge mode with an average firing frequency of $2.4{\pm}0.9$ Hz. Neuron in MK-801 treated group (0.2 mg/kg, i.p.) had an average input resistance of $3.28{\pm}5.7\;M{\Omega}$ and a membrane time constant of $7.4{\pm}1.8$ ms. These neurons exhibited $2.4{\pm}0.2$ ms spike durations, which were similar to the average spike duration recorded in the neurons of the control group. Slightly less than half of these neurons were firing spontaneously with an average discharge rate of $2.4{\pm}1.1$ Hz. The average peak amplitude of the AHP following the spikes in these groups was $7.4{\pm}0.6$ mV with respect to the resting membrane potential. Cells in MK-801 and lidocaine treated group (5 mg/kg, i.c.v.) had an average input resistance of $3.45{\pm}6.0\;M{\Omega}$ and an average time constant of $8.0{\pm}1.4$ ms. The cells were firing spontaneously at an average discharge rate of $0.6{\pm}0.4$ Hz. Upon depolarization of the membrane by 0.8 nA for 400 ms, all of the tested cells exhibited accommodation of spike discharge. The most common synaptic response contained an EPSP followed by early-IPSP and late-IPSP. Analysis of the voltage dependence revealed that the early-IPSP and late-IPSP were putative $Cl^--and\;K^+-dependent$, respectively. Systemic injection of the NMDA receptor blocker, MK-801, did not block synaptic responses to the stimulation of the commissural pathway. No significant modifications of EPSP, early-IPSP, or late-IPSP components were detected in the MK-801 and/or lidocaine treated group. These results suggest that MK-801 and lidocaine manifest their CNS effects through firing pattern of hippocampal pyramidal cells and neural network pattern by changing the synaptic efficacy and cellular membrane properties.

  • PDF

Measurements of Fast Transient Voltages due to Human Electrostatic Discharges (인체에 대전된 정전기 방전에 의해 발생한 급속과도전압의 측정)

  • 이복희;이동문;강성만;엄주홍;이태룡;이승칠
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.16 no.4
    • /
    • pp.108-116
    • /
    • 2002
  • This paper presents the measurements and evaluation of voltage waveforms due to human electrostatic discharge(ESD). The principle of operation and design rule of a new device for measuring the ESD fast transient voltages with very fast rise time were described. Peak values and rise time of ESD voltages derived from a charged human body under a variety of experimental conditions were examined. The frequency bandwidth of the proposed voltage measuring system ranges from DC to 400[㎒]. The ESD voltage waveform is nearly equal to the ESD current waveform and the peak amplitude of ESD current waveform is roughly proportional to the ESD voltage in each experimental conditions. A rapid approach results in a discharge voltage with a faster initial rise time than for a slow approach. The voltages caused by direct finger ESDs have an initial slope with a relatively long, 10∼30[ns] rise time, but the amplitude is small. On the other hand, the voltages caused by direct hand/metal ESDs have a steep initial s1ope with 1 ∼3[ns] rise time, but an initial spike is very big. As a consequence, it was found that the ESD voltage and current waveforms strongly depend on the approach speed and material of intruder. These measurement results would be useful to design the ESD protective devices.