• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.10-15
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• 2012

In this work, we proposed the asymmetric MQW structure with gradually increased or decreased well thickness from n-layers to p-layers in order to improve the performance of DUV-LEDs. We report the simulation results of electrical/optical characteristics by using the SimuLED program. From the simulation results, we found that B structure with thickness of the wells gradually increased from the n-side to the p-side has the same forward voltage(Vf) as standard structure, but the light output power (Pout) was improved by a factor of 1.17 at 20mA compared with those of the standard structure.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.19 no.1
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• pp.11-15
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• 2013

In order to find a sanitary logistic way to handle library books, papers and environmental sources contacting the books were tested in their microbial contamination load and methods to decontaminate the books were investigated. Generally bacterial load of inner book pages was very low, but increased when contaminated with liquid such as saliva. In contrast, their lateral ends showed much higher bacterial contamination presumably due to dry dust contamination on there. As operations to improve the sanitary book conditions, turbulent air blow was found to be workable for reducing dry dusty contamination and 280 nm ultra-violet (UV) light emitting diode (LED) was so for decontaminating wet surface contamination. Microbial inactivation by the UV LED could be realized with irradiation for more than 5 minutes at 2 cm distance. Air blow of 5.5 m/s for 0.5~1 minute could reduce the dusty contamination on a model book surface.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1170-1176
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• 2003

We developed an evolutionary optimization process involving a genetic algorithm and combinatorial chemistry (combi-chem), which was tailored exclusively for tile development of LED phosphors with a high luminescent efficiency, when excited by soft ultra violet irradiation. The ultimate goal of our study was to develop oxide red phosphors, which are suitable for three-band white Light Emitting Diodes (LED). To accomplish this, a computational evolutionary optimization process was adopted to screen a Eu$^{3+}$-doped alkali earth borosilicate system. The genetic algorithm is a well-known, very efficient heuristic optimization method and combi-chem is also a powerful tool for use in an actual experimental optimization process. Therefore the combination of a genetic algorithm and combi-chem would enhance the searching efficiency when applied to phosphor screening. Vertical simulations and an actual synthesis were carried out and promising red phosphors for three-band white LED applications, such as Eu$_{0.14}$Mg$_{0.18}$Ca$_{0.07}$Ba$_{0.12}$B$_{0.17}$Si$_{0.32}$O$_{\delta}$, were obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.3
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• pp.108-112
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• 2007

Cubic Zirconia single crystals having changeable color with light source were grown by skull melting method. Strong absorption of yellow color region light by Co and Nd and the absorption in violet color region by Fe led the color change from blue-green to red-purple with the light source from fluorescent to incandescent lamp. Color of crystals varied not only by the dopants but yttria contents and the conditions far heat treatment.

• Journal of the Korean Society of Food Science and Nutrition
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• v.43 no.1
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• pp.135-140
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• 2014

Pre-storage ultra-violet (UV) light treatment on fresh produce is known to inactivate the contaminated microorganisms, activate the defense system, and delay ripening extending the shelf life. As UV light emitting diode (LED) becomes available at a relatively low price, continuous or intermittent UV treatment during chilled storage is possible in a container or package. This study attempted an in situ UV LED treatment on fresh produce stored under a refrigerated container in order to see its potential in the fresh produce storage and further optimize its application conditions. The effect of in-container UV LED irradiation on the quality preservation of shredded carrots was investigated in the air and modified atmosphere (MA) conditions. Two sets of experiment with Escherichia coli inoculation and with natural microbial flora in the air (two 30 minute on-off cycles of 1 $diode/dm^2$ per day at a location above 2 cm) showed a clear and significant effect of the UV LED irradiation on the suppression of microbial growth: 280 nm was the most effective by maintaining a lower microbial count by at least 0.5 log (CFU/g) throughout the 6 day storage period. The carotenoids content of shredded carrots subjected to UV LED treatment at 365 and 405 nm in the air was higher than that of the control shredded carrots. In MA condition of $O_2$ of 1.2~4.3% and $CO_2$ of 8.4~10.6% being indifferent with LED wavelengths, 280 nm UV LED irradiation was also effective in inhibiting the microbial growth. While there was no observed difference in the carotenoids content between untreated and UV LED-treated shredded carrots in MA, UV LED irradiation at 365 and 405 nm was slightly better in DPPH radical scavenging activity. The use of UV LED in storage container or package seems to give the benefits of preserving the microbial and nutritional qualities of minimally processed fruits and vegetables.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1514-1519
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• 2009

We fabricated the GaNLED emitting 400 nm wavelength and improved the optical extraction efficiency by making surface patterns on n-GaN layer and ITO layer above p-GaN. In addition, the light reflection metal under the n and p pad is made and the light reflection metal is installed on the backside of the chip. The light extraction efficiency is increased by 20 % with texturing n-GaN layer and 18% with texturing ITO layer at 20 mA. Compared to planar-surface LED, the light extraction efficiency for surface texturing both n-GaN and ITO is increased by 32% at 20mA.

• Journal of Sensor Science and Technology
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• v.16 no.1
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• pp.7-10
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• 2007

A thick film catalytic gas sensors which can be operated at $142^{\circ}C$ in presence of ultra violet-light emitting diode has been developed to measure hydrogen concentration in 0-5 % range. The sensing material as a combustion catalyst consists of $TiO_{2}$ (5 wt%) and Pd/Pt (20 wt%) supported on $Al_{2}O_{3}$ powder and the reference material to compensate the heat capacity of it in a bridge circuit was an catalyst free $Al_{2}O_{3}$ powder. Platinum heater and sensor materials were formed on the alumina plate by screen printing method and heat treatment. The effect of UV radiation in the presence of photo catalyst $TiO_{2}$ on the sensor sensitivity, response and recovery time has been investigated. The reduction of operating temperature from $192^{\circ}C$ to $142^{\circ}C$ for hydrogen gas sensing property in presence of UV radiation is attributed to the hydroxy radical and superoxide which was formed at the surface of $TiO_{2}$ under UV radiation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.1-244.1
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• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.