• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.3
• /
• pp.255-259
• /
• 2008

Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

• Proceedings of the KSME Conference
• /
• 2001.06a
• /
• pp.298-303
• /
• 2001

The critical thickness of an epitaxial film on a substrate in electronic or optoelectronic devices is studied on the basis of equilibrium dislocation analysis. Two geometric models, a single dislocation and an array of dislocations in heteroepitaxial system, are considered respectively to calculate the misfit dislocation formation energy. The isotropic linearly elastic stress fields for the models are obtained by means of complex potential method combined with alternating technique, and are used for calculating the formation energies. As a result, the effect of elastic mismatch between film and substrate on critical thickness is presented and $Si_xGe_{1-x}/Si$ epitaxial structure is analyzed to predict the critical thickness with varying germanium concentration.

• Proceedings of the KSME Conference
• /
• 2000.04b
• /
• pp.240-245
• /
• 2000

In this study, thickness, density and effective thermal conductivity of frost forming on the horizontal cylinder were measured with various air temperature and humidity. Reynolds number and temperature of cooling surface are controlled 17300 and $-l5^{\circ}C$ respectively. In each case of air temperature $5^{\circ}C,\;10^{\circ}C,\;15^{\circ}C,$ varying absolute humidity, experiments were executed. In measuring frost surface temperature and thickness of frost layer, infrared thermocouples and CCD camera were used. Frost was gathered from cylinder to measure mass of frost layer. Experimental data showed that the thickness and effective thermal conductivity of the frost layer increase with respect to time. Thickness of frost layer increase with humidity increasing, and density of frost layer increase with air temperature rising. Frost growth with air temperature and density of frost layer with humidity are affected by whether dew point is below or above freezing point.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.25 no.6
• /
• pp.799-803
• /
• 2001

Miniature heat pipe(MHP) with woven-wired wick was used to cool the CPU of a notebook PC. The pipe with circular cross-section was pressed and bent for packaging the MHP into a notebook PC with very limited compact packaging space. A cross-sectional area of the pipe is reduced about 30% as the MHP with 4mm diameter is pressed to 2mm thickness. In the present study a performance test has been performed in order to review varying of operating performance according to pressed thickness variation and heat dissipation capacity of MHP cooling module that is packaged on a notebook PC. New wick type was considered for overcoming low heat transfer limit when MHP is pressed to thin-plate. The limiting thickness or pressing is shown to be within the range of 2mm∼2.5mm through the performance test with varying the pressing thickness. When the wall thickness of 0.4mm is reduced to 0.25mm for minimizing conductive thermal resistance through the wall of heat pipe, heat transfer limit and thermal resistance of MHP were improved about 10%. In the meantime, it is shown that the thermal resistance and heat transfer limit for the MHP with central wick type are higher than those of MHP with existing wick types. The results of performance test for MHP cooling modules with woven-wired wick to cool a notebook PC shows the stability as cooling system since T(sub)j(Temperature of Processor Junction) satisfy a demand condition of 0∼100$\^{C}$ under 11.5W of CPU heat.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.1522-1525
• /
• 2007

Circular milling operations are used to enlarge die and cylinder bores, and machine airframe pockets. In this case, cutting force varies as cutting tool position relative to workpiece. This paper presents a mechanistic model of geometric uncut chip thickness by predicting time varying cutter-part intersection as the cutter travels along the circular path. Compared with experimental results, the suggested cutting force model shows a good agreement.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.800-803
• /
• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.31 no.11
• /
• pp.141-145
• /
• 1982

Optical absorption properties of an orphous Se film due to interband electronic transitions are observed in the visible range by varying the folm thickness. Amorphous Se films were prepared by evaporation method. As the experimental results, it is found that optical energy gap is around 2.07(e V), and the optical constants depend on the film thickness, evaporation-deposition conditions, and incident photon energy.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.3
• /
• pp.156-159
• /
• 2013

The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

• The Korean Journal of Ceramics
• /
• v.5 no.4
• /
• pp.368-370
• /
• 1999

Using DC faced target sputtering method we grow AIN the films on the $Al_2O_3$(0001) substrate with varying thickness(17$\AA$-1000$\AA$). We measured x-ray diffraction(XRD) profiles by synchrotron radiation($\lambda$=1.12839 $\AA$) with four circle diffractometer. The full width half maximum(FWHM) of rocking curve for the AIN (0002) diffraction of the film grown at $500^{\circ}C$ was $0.029^{\circ}$. Also, we confirmed that the stress between AIN thin film and $Al_2O_3$(0001) substrate was reduced as increasing AIN film thickness, and the critical thickness of 400~500 $\AA$, defined as a lattice constant in the film agrees with that in a bulk without stress, was obtained.

• Journal of the Korean Ceramic Society
• /
• v.21 no.3
• /
• pp.266-270
• /
• 1984

The photoelectrochemical properties of the reduced $TiO_2$ceramic electrodes are investigated varying the thickness of the electrodes and the amounts of $Sb_2O_3$ as dopant. As the thickness of the undoped. $TiO_2$ceramic electrode increases the photocurrent tends to decrease. However for the R-F sputtered $TiO_2$ thin film electrodes the photocurrent tends to increase to about 1$\mu\textrm{m}$ thick and then decreases with increasing thickness. For the $TiO_2$ ceramic electrodes doped with $Sb_2O_3$ the photocurrent decreases with inreasing the amounts of dopant and in the case of rapid cooling in air without reduction treatment the photocurrent shows lower value. Also visible light excitation is observed at 500~550(nm) wavelength for the $TiO_2$ ceramic electrodes doped with $Sb_2O_3$comparing wtih the $TiO_2$ ceramic electrodes (~420nm)