The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Initial Growth Mode and Epitaxial Growth of AIN Thin Films on $Al_2O_3(0001)$ Substrate by DC Faced Target Sputtering

  • Kim, Jin-Woo (Research Department, Electronics and Telecommunications Research Institute) ;
  • Kang, Kwang-Yong (Research Department, Electronics and Telecommunications Research Institute) ;
  • Lee, Su-Jae (Research Department, Electronics and Telecommunications Research Institute)
  • Published : 1999.12.01
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Abstract

Using DC faced target sputtering method we grow AIN the films on the $Al_2O_3$(0001) substrate with varying thickness(17$\AA$-1000$\AA$). We measured x-ray diffraction(XRD) profiles by synchrotron radiation($\lambda$=1.12839 $\AA$) with four circle diffractometer. The full width half maximum(FWHM) of rocking curve for the AIN (0002) diffraction of the film grown at $500^{\circ}C$ was $0.029^{\circ}$. Also, we confirmed that the stress between AIN thin film and $Al_2O_3$(0001) substrate was reduced as increasing AIN film thickness, and the critical thickness of 400~500 $\AA$, defined as a lattice constant in the film agrees with that in a bulk without stress, was obtained.

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References

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