• Proceedings of the Korea Water Resources Association Conference
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• 2006.05a
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• pp.1328-1332
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• 2006

As the city is developed, Sewerage outlet is installed for the discharge of rainfall special at new town or modified the existed sewerage network. But the sewerage outlet is influenced to the cannel flow. In this paper, for analyzing variation of flow properties by installing sewerage outlet, it was experimented a with $120^{\circ}$ channel junction. The water depth is rapidly increasing at the just before sewerage installed position, but the velocity is represented increasing at the just after sewerage installed position. In addition, the biggest increment of water depth and velocity is represented $3.0m^3/hr{\sim}4.0.m^3/hr$. At the position of the sewerage outlet installation, separate install at up and downstream is rather than only one position at up or down stream. If it was not install both installation, the upstream installation is better than downstream installation.

• Magazine of the Korean Society of Agricultural Engineers
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• v.15 no.1
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• pp.2853-2877
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• 1973

Models of cross-sections and channels were made in order to measure seepage losses. Cross-sections were made of sand, sandy clay loam and loam, their thicknesses being 30cm and 40cm, respectively. Flow depths kept in the cross-sections were 4cm, 6cm, 8cm and 10cm. Straight and curved channel models were provided so as to measure seepage losses, when constant water depths maintained at the heads of the channels were 7.3cm and 5.7cm, respectively. The results obtained in this experiment are presented as follows: 1) A cumulative seepage loss per unit length at a point in the channel varies in accordance with time and flow depth. The general equation of cumulative seepage loss may be as follows(Ref. to Table V.25): $$q_{cum}=\int_{o}^aq(a)dt+\int_a^bq(b)dt+\int_b^tq(c)dt$$ 2) In case that the variation of water depth through the channel is slight, the total seepage loss may be computed by applying the following general equation: $$\={q}_{cum}{\cdot}x=\int_o^tq_{cum}\frac{{\partial}x}{{\partial}t}dt$$ 3) Because seepage loss varies considerably according to water depth in case that the variation of flow depth through the channel is great, seepage loss should be computed by taking account of the change of flow depth. 4) The relation between time and traveling distance of water flow may be presented as the following general equation(Ref. to Table V.29): $$x=pt^r$$ 5) The ratios of the seepage losses of the straight channel to the curved channel are 1:1.03 for a flow depth of 7.3cm and 1:1.068 for that of 5.7cm. 6) The ratios of the seepage losses occurring through the bottom to those through the inclined plane in the channel cross-section are 1:2.24 for a water depth of 8cm and 1:2.47 for a depth of 10cm in case that soil-layer is 30cm in thickness. Similarly, those ratios are 1:2.62 and 1:2.93 in case of a soil-layer thickness of 40cm(Ref. to Table V.5).

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.427-435
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• 2014

Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.86-90
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• 1992

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.14 no.5
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• pp.1191-1197
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• 1994

The purpose of this study is to examine morphometric characteristics in a channel bend reach. The new shape factor is suggested that channel deformation rate of cross section (${\Delta}A_s$) showed the variation of concentrated location of force due to the current and the variation of erosional section in alluvial channel. In the downstream direction the meaning of decreasing "${\Delta}A_s$" is the stability of channel bed. This study was analyzed morphological characteristics of cross section-width of channel ($W_s$), width to the thalweg ($W_{th}$), maximum depth ($D_{th}$)-on the Guem River, and typical cross sections in channel bend were proposed. The channel migration rate (M) for the study river was represented that the zones of curvature ratio (R/W) with 2~4 were larger 12% than other zones.

• Journal of the Korea Institute of Military Science and Technology
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• v.4 no.1
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• pp.264-273
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• 2001

The conjugate heat transfer from a protruding module in a horizontal channel with a variation of air temperature is experimentally investigated. It is an aim of this study is to estimate temperature difference between a module and air. This study is performed with a variation of parameters that are air temperatures($T_i,=25^{\circ}C{\sim}55^{\circ}C),$ thermal resistance($R_c=158 K/W),$ air velocities ( 4V_i=0.1$ m/s~l.5 m/s ), and input power (Q=3 W, 7 W ). The results show that as the thermal resistance increases, the effect of air temperatures are decreased. And input power was most effective parameter on the temperature difference between a module and air.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.20 no.4
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• pp.421-428
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• 2008

Youngwon channel located in Chinhae city and formed by the Busan New Port Construction Project has been concerned about the water quality degradation problems because of the flow and pollutants stagnation due to its long-narrow shape. In this study, the water quality(hereafter WQ) variation is analysed by using the monthly WQ data measured in Yongwon channel from 2003 to 2007. The analysis shows that the TN and TP concentration in the inside Yongwon channel is definitely worse than the TN and TP concentration in the entrance of the Yongwon channel based on the 95% confidence level. The COD, TN, and TP concentrations in the Yongwon channel are 1.34, 2.08, and 1.80 times larger than that in the entrance of the Yongwon channel, respectively. It has been found that only the TP concentration in SW-26 station has an increasing trend based on the Mann-Kendall test with respect to 95% confidence level. The other stations and the other WQ constituent changes do not have the any significant trends.

• Journal of Electrical Engineering and Technology
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• v.2 no.2
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• pp.267-273
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• 2007

A depletion-mode MOSFET has been analyzed to evaluate its electrical behavior using a novel 3-D numerical simulation package. The characterizing analysis of the BC MOSFET was performed through short-channel narrow-channel and small-geometry effects that are investigated, in detail, in terms of the threshold voltage. The DIBL effect becomes significant for a short-channel device with a channel length of $<\;3({\mu}m)$. For narrow-channel devices the variation of the threshold voltage was sharp for $<4({\mu}m)$ due to the strong narrow-channel effect. In the case of small-geometry devices, the shift of the threshold voltage was less sensitive due to the combination of the DIBL and substrate bias effects, as compared with that observed from the short-channel and narrow-channel devices. The characterizing analysis of the narrow-channel and small-geometry devices, especially with channel width of $<\;4({\mu}m)$ and channel area of $<\;4{\times}4({\mu}m^2)$ respectively, can be accurately performed only from a 3-D numerical simulation due to their sharp variations in threshold voltages.

• Proceedings of the Korea Water Resources Association Conference
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• 2005.09a
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• pp.353-353
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• 2005

• Journal of Industrial Technology
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• v.22 no.A
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• pp.219-228
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• 2002

The divided channel is not often used on the river and when the installation is for the controlling of the flow quantity. The determination of the channel size is not a easy task. Model tests are examined to confirm the variation of distribution rate by the method of the channel installation and the position of the structure and the adjustment of numerical simulation is executed by the comparing of the results. This study is to execute numerical model according to installation of divided channel by using AQUADYN program, the 2nd dimension numerical model, and HEC-RAS program, the 1st dimension numerical model, by the shape of divided channel. Also, it compares with difference by method about each case.