• Progress in Superconductivity
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• 제8권1호
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• pp.59-64
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• 2006

High $J_c\;YBa_2Cu_3O_x$ superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Coating solutions were prepared by dissolving Y-, Ba- and Cu-acetates in DCA solvent followed by drying in rota vapor to obtain the blue gel that is diluted in methanol and 2-methoxyethanol for adjusting the cation concentration. DCA-MOD precursor solution was coated on a single crystal(001) $LaAlO_3(LAO)$ substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing oxygen atmosphere with a 7.2% humidity. Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. X-ray diffraction analysis showed that YBCO grains grew with a (001) preferred orientation. A High critical current density($J_c$) of 1.28 $MA/cm^2$(@77 K and self-field) was obtained id. the YBCO film prepared using 2-methoxyethanol as a solvent.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.159-160
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• 2012

지난 30년 동안 플래시 메모리의 주류 역할을 하였던 부유 게이트 플래시 메모리는 40 nm 기술 노드 이하에서 셀간 간섭, 터널 산화막의 누설전류 등에 의한 오동작으로 기술적 한계를 맞게 되었다. 또한 기존의 비휘발성 메모리는 동작 시 높은 전압을 요구하므로 전력소비 측면에서도 취약한 단점이 있다. 그러나 이러한 문제점들을 기존의 Si기반의 소자기술이 아닌 새로운 재료나 공정을 통해서 해결하려는 연구가 최근 활발하게 진행되고 있다. 특히, 플래시 메모리의 중요한 구성요소의 하나인 터널 산화막은 메모리 소자의 크기가 줄어듦에 따라서 SiO2단층 구조로서는 7 nm 이하에서 stress induced leakage current (SILC), 직접 터널링 전류의 증가와 같은 많은 문제점들이 발생한다. 한편, 기존의 부유 게이트 타입의 메모리를 대신할 것으로 기대되는 전하 포획형 메모리는 쓰기/지우기 속도를 향상시킬 수 있으며 소자의 축소화에도 셀간 간섭이 일어나지 않으므로 부유 게이트 플래시 메모리를 대체할 수 있는 기술로 주목받고 있다. 특히, TBM (tunnel barrier engineered memory) 소자는 유전율이 큰 절연막을 적층하여 전계에 대한 터널 산화막의 민감도를 증가시키고, 적층된 물리적 두께의 증가에 의해 메모리의 데이터 유지 특성을 크게 개선시킬 수 있는 기술로 관심이 증가하고 있다. 본 연구에서는 Si3N4/Ta2O5를 적층시킨 staggered구조의 tunnel barrier를 제안하였고, Si기판 위에 tunnel layer로 Si3N4를 Low Pressure Chemical Vapor Deposition (LPCVD) 방법과 Ta2O5를 RF Sputtering 방법으로 각각 3/3 nm 증착한 후 e-beam evaporation을 이용하여 게이트 전극으로 Al을 150 nm 증착하여 MIS- capacitor구조의 메모리 소자를 제작하여 동작 특성을 평가하였다. 또한, Si3N4/Ta2O5 staggered tunnel barrier 형성 후의 후속 열처리에 따른 전기적 특성의 개선효과를 확인하였다.

• 멤브레인
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• 제22권6호
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• pp.424-434
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• 2012

본 연구에서는 CVD법으로 세라믹 막을 제조하였다. 튜브의 ${\alpha}-Al_2O_3$ 지지체 위에 Ga 염이 첨가된 ${\gamma}-Al_2O_3$를 코팅하였고, 실란화합물인 tetramethylorthosilane (TMOS) 를 $650^{\circ}C$에서 화학적 기상 증착법으로 막에 증착하였다. 제조된 세라믹 막을 사용하여 수소, 질소, 이산화탄소, 메탄의 단일조성 기체투과 실험을 $600^{\circ}C$에서 시행하였다. Ga 염 비첨가 시, $600^{\circ}C$ 수분 처리 실험의 $H_2/N_2$ 선택도가 926에서 829로 감소한 반면, Ga 염 첨가 시에는 910에서 904로 안정하였다. 이 결과를 통해, 막에 금속염을 첨가하여 제조한 막이 수분 안정성을 향상시킴을 확인하였다.

• 한국대기환경학회지
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• 제21권1호
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• pp.83-96
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• 2005

The purposes of this study were to characterize the local levels of VOCs (volatile organic compounds), to develop source profiles of VOCs, and to quantify the source contribution of VOCs using the CMB (chemical mass balance) model. The concentration of VOCs had been measured every 6-day duration in the SRO monitoring site in the Yeosu Petrochemical Industrial Complex from September 2000 to August 2002. The total of 35 target VOCs, which were included in the TO-14 designated from the U.S. EPA, was selected to be monitored in the study area. During a 24-h period, the ambient VOCs were sampled by using canisters placing about 10 ～ 15 m above the ground level. The collected canisters were then analyzed by a GC-MS in the laboratory. Aside from ambient sampling at the SRO site, the VOCs had been intensively and massively measured from 8 direct sources and 4 general sources in the study area. The results obtained in the study were as follows; first, the annual mean concentrations of the target VOCs were widely distributed regardless of monitoring sites in the Yeosu Petrochemical Industrial Complex. In particular, the concentrations of BTX (Benzene, Toluene, Xylene), vinyl chloride were higher than other target compounds. Second, based on these source sample data, source profiles for VOCs were developed to apply a receptor model, the CMB model. Third, the results of source apportionment study for the VOCs in the SRO Site were as follows; The source of petrochemical plant was apportioned by 31.3% in terms of VOCs mass. The site was also affected by 16.7% from wastewater treatment plant, 14.0% from iron mills, 8.4% from refineries, 4.4% from oil storage, 3.8% from automobiles, 2.3% from fertilizer, 2.3% from painting, 2.2% from waste incinerator, 0.6% from graphic art, and 0.4% from gasoline vapor sources.

• Current Photovoltaic Research
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• 제2권3호
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• pp.115-119
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• 2014

$Cu(In,Ga)Se_2$ (CIGS) thin films have been used as a light absorbing layer in high-efficiency solar cells. In order to improve the quality of the CIGS thin film, often selenization step is applied. Especially when the thin film was formed by non-vacuum powder process, selenization can help to induce grain growth of powder and densification of the thin film. However, selenization is not trivial. It requires either the use of toxic gas, $H_2Se$, or expensive equipment which raises the overall manufacturing cost. Herein, we would like to deliver a new, simple method for selenization. In this method, instead of using a costly two-zone furnace, use of a regular tube furnace is required and selenium is supplied by a mixture of selenium and ceramic powder such as alumina. By adjusting the ratio of selenium vs. alumina powder, selenium vaporization can be carefully controlled. Under the optimized condition, steady supply of selenium vapor was possible which was evidently shown by large grain growth of CIGS within a thin powder layer.

• 한국표면공학회지
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• 제46권1호
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Composites Research
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• 제28권4호
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• pp.239-243
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• 2015

최근 탄소나노튜브 (CNT) 고유의 특성을 충분히 발현하면서, 섬유화를 통해 장점을 극대화 할 수 있는 탄소나노튜브 섬유 합성 방법 및 후처리 공정들이 많은 관심을 받아왔다. 그러나 개별 탄소나노튜브가 다발형태로 집속되어지는 과정 중, 탄소나노튜브 상호간 약한 계면결합력과 전단특성으로 인하여 원하는 섬유 물성을 확보하기 어려운 문제점을 갖고 있다. 이를 해결하기 위해서 본 연구에서는 Direct Spinning 방법을 통한 탄소나노튜브의 연속적인 합성과 다양한 후처리 방법을 이용하여 탄소나노튜브 섬유의 기계적 특성을 조사하였다. 플라즈마 후처리를 통하여 측정된 탄소나노튜브 섬유의 기계적 물성은 본래의 섬유보다 최대 40%가 증가됨을 확인하였다.

• 청정기술
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• 제20권4호
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• pp.406-414
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• 2014

바이오가스 내 주요성분은 메탄 45~75%, 이산화탄소 30~50% 그리고 황화수소 0.3% 및 수증기가 함유하고 있다. 바이오가스로부터 이산화탄소와 황화수소를 제거하기 위해 흡수공정과 분리막공정을 이용한 메탄가스 자원화연구가 수행되고 있다. 본 논문에서는 바이오가스성분으로 조제한 조제가스를 이용하여 폴리설폰으로 제조한 분리막을 이용하여 메탄을 95% 까지 분리정제하기 위한 실험을 수행하였다. 분리막에 의하여 이산화탄소와 메탄의 분리를 위해 공급원료와 혼합가스의 투입압력의 효과를 연구하였고 0.3% 황화수소를 처리하기 위한 방법으로 킬레이트화합물을 사용하였다.

• 대한안전경영과학회지
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• 제20권3호
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• pp.27-36
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• 2018

The steel pipe manufacturing industry deals with facilities and materials. Especially thermal facilities are close to vapor cloud explosion (VCE) and may cause secondary damage to facilities because they deal with corrosive substances such as hydrofluoric acid, sulfuric acid and acid, fire, explosion, leakage etc. It is in danger. In this study, hazard identification method was conducted using HAZOP techniques and quantitative risk analysis was conducted using e-CA, a program that supports accident impact analysis. Equipment in the influence range of ERPG - 3 was determined to be a facility requiring replacement. It was decided that neutralization is necessary using slaked lime. Based on the cost of loss, We presented the proper replacement which is the timing of the dangerous facility. As a result, It was ideal to replace the facilities with 20 years of heat treatment facilities, one year of hydrofluoric acid storage tank, 20 years of sulfuric acid storage tank, and 5 years of hydrochloric acid storage tank.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.248-253
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• 2014

Air Gap Membrane Distillation (AGMD) is one of several technologies that can be used to solve problems fresh water availability. AGMD exhibits several advantages, including low conductive heat loss and higher thermal efficiency, due to the presence of an air gap between the membrane and condensation wall. A previous study by Bhardwaj found that the condensation surface properties (materials and contact angle) affected the total collected fresh water in the solar distillation process. However, the process condition differences between solar distillation and AGMD might result in different condensation phenomena. In contrast, N. Miljkovic showed that a hydrophobic surface has higher condensation heat transfer. Moreover, to the best of our knowledge, there is no study that investigates the effect of condensation surface properties in AGMD to overall process performance (i.e. flux and thermal efficiency). Thus, in this study, we treated the AGMD condensation surface to make it hydrophobic or hydrophilic. The condensation surface could be made hydrophilic by immersing and boiling plate in deionized (DI) water, which caused the formation of hydrophilic aluminum hydroxide (AlOOH) nanostructures. Afterwards, the treated plate was coated using hexamethyldisiloxane (HMDSO) through plasma-enhanced chemical vapor deposition (PECVD). The result indicated that condensation surface properties do not affect the permeate flux or thermal efficiency significantly. In general, the permeate flux and thermal efficiency for the treated plates were lower than those of the non-treated plate (pristine). However, at a 1 mm and 3 mm air gap, the treated plate outperformed the non-treated plate (pristine) in terms of permeate flux. Therefore, although surface wettability effect was not significant, it still provided a little influence.