• 한국재료학회지
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• 제7권6호
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• pp.492-497
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• 1997

HVPE를 이용하여 sapphire기판 위에서 후막 GaN의 성장특성을 조사하였다. 성장온도가 100$0^{\circ}C$에서 110$0^{\circ}C$로 증가하여도 성장속도는 영향을 받지않고 50-60$\mu\textrm{m}$/hr의 성장속도를 나타내었으나 표면특성과 결정성은 향상되었다. 110$0^{\circ}C$에서 성장된 후막 GaN는 DCXRD측정결과 451arcsec의 반티폭을 나타내었으며, PL측정결과 10K에서 19meV의 반치폭을 나타내었다. Ga 공급원의 온도가 93$0^{\circ}C$에서 77$0^{\circ}C$로 감소하여도 성장속도는 영향을 받지 않았으나, 77$0^{\circ}C$의 온도에서 GaN의 결정성이 향상되었다. HCI의 양이 5sccm에서 20sccm으로 증가함에 따라 성장속도가 15$\mu\textrm{m}$/hr에서 60$\mu\textrm{m}$/hr으로 증가하였으며, 표면특성도 향상되었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.211-212
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• 2012

ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.

• 한국표면공학회지
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• 제54권6호
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• pp.331-339
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• 2021

Environmental barrier coatings(EBCs) are applied to the SiC/SiC ceramic matrix composites(CMCs) in order to protect CMCs from being corroded with water vapor by combustion gas in gas turbine engines. Ytterbium silicates, such as ytterbium monosilicate and ytterbium disilicate, are ones of the candidate materials for EBCs due to their excellent resistance to water vapor corrosion as well as thermal-expansion match with SiC. In this study, ytterbium silicates are fabricated with 2-step solid-state synthesis targeting ytterbium disilicate. After synthesizing ytterbium monosilicate, the mixtures of ytterbium monosilicate and SiO₂ are heat-treated and densified by using pressureless sintering or hot pressing with a variety of heating conditions. The phase formation, thermal expansion, and oxidation behavior are examined with fabricated specimens. The final densified bodies are found to be composites between ytterbium monosilicate and ytterbium disilicate with different ratios, which results in 4.43 to 6.72×10^-6/K range of coefficients of thermal expansion. The probability of these ytterbium silicates for EBC applications is also discussed.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.79-85
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• 1997

Fe$_2$O$_3$ thin films were prepared on $Al_2$O$_3$ substrate by PECVD(Plasma-Enhanced Chemical Vapor Deposition) process. The phase transformation of iron oxide film was determined as the substrate temperature and reduction-oxidation process. $\alpha$-Fe$_2$O$_3$ was stable in deposition temperature ranges of 80~15$0^{\circ}C$. Fe$_3$O$_4$ phase was obtained by the reduction process of $\alpha$-Fe$_2$O$_3$ phase in H$_2$ ambient. Fe$_3$O$_4$ phase was transformed into a ${\gamma}$-Fe$_2$O$_3$ thin film under controlled oxidation conditions at 280~30$0^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.477-480
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• 2007

Hydrate phase equilibrium for the binary CO2+water and CH4+water mixtures in silica gel pore of nominal 6, 30, and 100 nm were measured and compared with the cacluated results based on van der Waals and Platteeuw model. At a specific temperature three-phase hydrate-water-vapor (HLV) equilibrium curves for pore hydrates were shifted to the higher-pressure condition depending on pore sizes when compared with those of bulk hydrates. Notably, hydrate phase equilibria for the case of 100 nominal urn pore size were nealy identical with those of bulk hydrates. The activities of water in porous silica gels were modified to account for capillary effect, and the calculation results were generally in good agreement with the experimental data.

• ETRI Journal
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• 제19권1호
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• Journal of Advanced Marine Engineering and Technology
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• 제28권8호
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• pp.1195-1202
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• 2004

In this paper an experimental study was investigated for two-phase flow distribution in compact heat exchanger header. A test section was consisted of the horizontal bottom dividing header($\phi$: 5 mm, L: 80 mm) and 10 upward circular mini channels ($\phi$: 1.5 mm, L: 850 mm) using an acrylic tube. Three different types of tube intrusion depth were tested for the mass flux and inlet mass quality ranges of 50 - 200 kg/$m^2$s and 0.1 - 0.3, respectively. Air and water were used as the test fluids. The distribution of vapor and liquid is obtained by measurement of the total mass flow rate and the calculation of the quality. Two-phase flow pattern was observed, and pressure drop of each channel was measured. By adjusting the intrusion depth of each channel an uniform liquid flow distribution through the each channel was able to solve the mal-distribution problem.

• 신재생에너지
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• 제3권2호
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• pp.47-52
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• 2007

Hydrate phase equilibrium for the binary $CO_{2}$+water and $CH_{4}$+water mixtures in silica gel pore of nominal 6, 30, and 100 nm were measured and compared with the cacluated results based on van der Waals and Platteeuw model. At a specific temperature three-phase hydrate-water-vapor (HLV) equilibrium curves for pore hydrates were shifted to the higher-pressure condition depending on pore sizes when compared with those of bulk hydrates. Notably, hydrate phase equilibria for the case of 100 nominal nm pore size were nearly identical with those of bulk hydrates. The activities of water in porous silica gels were modified to account for capillary effect, and the calculation results were generally in good agreement with the experimental data.

• 대한전자공학회논문지
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• 제23권6호
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• pp.820-832
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• 1986

In contrast to conventional liquid phase epitaxy of GaAs, surface kinetics limited growth is predominant in selective liquid phase epitaxy. For the stripe openings in the high-index crystal-lographic directions, the well-known facet formations and the decompositions into the low index planes or smooth circular surfaces are observed depending on the growth kinetics. For the low index direction stripe, surface kinetics limited growth is evident. By a numerical calcualtion we show that these phenomena are due to the enhanced masstransport by two dimensional diffusion and growth rate anisotropy which is found to be very stdrong with cusped minima for some singular planes in the solution growth as well as in vapor phase epitaxy. Morphological stability is briefly treated in terms of diffusion and its implications on device application are stated. Tese phenomena may be common to III-V compound semiconductors as well as GaAs.

• 한국재료학회지
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• 제18권12호
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• pp.664-668
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• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).