• Title/Summary/Keyword: valve metal

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One-dimensional Schottky nanodiode based on telescoping polyprismanes

  • Sergeyev, Daulet
    • Advances in nano research
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    • v.10 no.5
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    • pp.471-479
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    • 2021
  • In the framework of the density functional theory combined with the method of non-equilibrium Green functions (DFT + NEGF), the electric transport properties of a one-dimensional nanodevice consisting of telescoping polyprismanes with various types of electrical conductivity were studied. Its transmission spectra, density of state, current-voltage characteristic, and differential conductivity are determined. It was shown that C[14,17], C[14,11], C[14,16], C[14,10] show a metallic nature, and polyprismanes C[14,5], C[14,4] possess semiconductor properties and has a band gap of 0.4 eV and 0.6 eV, respectively. It was found that, when metal C[14,11], C[14,10] and semiconductor C[14,5], C[14,4] polyprismanes are coaxially connected, a Schottky barrier is formed and a weak diode effect is observed, i.e., manifested valve (rectifying) property of telescoping polyprismanes. The enhancement of this effect occurs in the nanodevices C[14,17] - C[14,11] - C[14,5] and C[14,16] - C[14,10] - C[14,4], which have the properties of nanodiode and back nanodiode, respectively. The simulation results can be useful in creating promising active one-dimensional elements of nanoelectronics.

Study on the Specular Effect in NiO spin-valve Thin Films (NiO 스핀밸브 박막의 Specular Effect에 의한 자기저항비의 향상에 대한 연구)

  • Choi, Sang-Dae;Joo, Ho-Wan;Lee, Ky-Am
    • Journal of the Korean Magnetics Society
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    • v.12 no.6
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    • pp.231-234
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    • 2002
  • Magnetic properties are investigated for top- and bottom-type spin valves of Si/SiO$_2$/NiO(60nm)/Co(2.5nm)/Cu(1.95nm)/Co(4.5nm)/NOL(t nm; Nano Oxide layer). The MR ratios of the bottom-type spin valves with NOL are larger than those of the top-type spin valves. However, the enhancement of the former is lower than the latter. Both of spin-valves also showed almost constant Ap and smaller p. Enhanced MR ratios of spin valves with NOL result mainly from small values of with constant Ap which due to specular diffusive electron scattering at NOL(NiO)/metal interfaces.

Molecular Beam Epitaxial Growth of Oxide Single Crystal Films

  • Yoon, Dae-Ho;Yoshizawa, Masahito
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.508-508
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    • 1996
  • ;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

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A Design of Power System Stabilization of TCSC System for Power system Oscillation Damping (전력 시스템의 동요 억제를 위한 TCSC용 안정화 장치 설계)

  • 정형환;허동렬;왕용필;박희철;이동철
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.2
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    • pp.104-112
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    • 2002
  • In this paper, it is suggested that the selection method of parameter of Power System Stabilizer(PSS) with robustness in low frequency oscillation for Thyristor Controlled Series Capacitor(TCSC) using Geletic Algorithm(GA). A TCSC meddle consists of a stories capacitor and a parallel path with a thyristor valve and a series inductor. Also in in parallel, as is typical with series capacitor applications, is a metal-oxide varistor(MOV) for overvoltage protection. The proposed PSS parameters are optimized using GA in order to maintain optimal operation of TCSC which is expected to be applied in transmission system to achieve a number of benefits under the various operating conditions. In order to verify the robustness of the proposed method, we considered the dynamic response of angular velocity deviation and terminal voltage deviation under a power fluctuation and rotor angle variation.

Study on improvement of efficiency of gas filter at the natural gas valve station (천연가스 공급기지내 가스필터 성능개선에 관한 연구)

  • Cho Y.B.;Jeon K.S.;Her J.Y.;You K.H.
    • Journal of the Korean Institute of Gas
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    • v.2 no.1
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    • pp.47-52
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    • 1998
  • To eliminate foreign substance like metal rust and sand in natural gas pipeline, 250um strainer filter is used present in Korea Gas Corporation. But particles smaller than 250um passing the filter have bad effects to the valves and the measuring equipments. In order to eliminate small paticle in the pipeline, it is necessary to cut down the pore size of filter When we cut down the pore size of filter, the pressure difference between the front of filter and that of the rear part is increasing and disturb normal condition of gas supply. So it is very important to control the condition between the pore size of filter and the pressure difference. In this study, using head loss coefficient K, the estimation method of efficiency of gas filter according to the pore size and the pressure difference is presented.

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Diecasting Design for a Fuel Tank Valve of LPG Automobiles by Fluid Flow Simulation (자동차용 LPG 연료 탱크 밸브의 다이캐스팅 방안의 유동해석)

  • Seong-Ho Bae;Sang-Chul Kim;Hee-Soo Kim
    • Journal of Korea Foundry Society
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    • v.42 no.6
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    • pp.331-336
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    • 2022
  • In this study, we investigated the casting designs for fuel tank valves for LPG automobiles. The valves we studied have two cavities inside the part. There is inevitable air entrapment inside the cavities. In order to reduce this kind of casting defect, we carried out computer simulations of molten metal flow during the diecasting process of the target products. The main process parameters were the ingate position, product direction, and injection velocity. We also examined the possible use of vacuum diecasting. The position of the air entrapment was almost identical for all the ingate positions and product directions. We found that the change of the injection velocity affects the position of the air entrapment. In case of vacuum diecasting, the position of the air entrapment was similar to the previous cases, but it is expected that the air entrapment will be highly reduced in a real situation due to the vacuumed space.

Numerical Analysis of Flow Characteristies inside innes part of Fluid Control Valve System (유동해석을 통한 유체제어벨브 시스템의 내부 유동 특성 분석)

  • Son, Chang-Woo;Seo, Tae-Il;Kim, Kwang-Hee;Lee, Sun-Ryong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.6
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    • pp.160-166
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    • 2018
  • The worldwide semi-conductor market has been growing for a long time. Manufacturing lines of semi-conductors need to handle several types of toxic gases. In particular, they need to be controlled accurately in real time. This type of toxic gas control system consists of many different kinds of parts, e.g., fittings, valves, tubes, filters, and regulators. These parts obviously need to be manufactured precisely and be corrosion resistant because they have to control high pressure gases for long periods without any leakage. For this, surface machining and hardening technologies of the metal block and metal gasket need to be studied. This type of study depends on various factors, such as geometric shapes, part materials, surface hardening method, and gas pressures. This paper presents strong concerns on a series of simulation processes regarding the differences between the inlet and outlet pressures considering several different fluid velocity, tube diameters, and V-angles. Indeed, this study will very helpful to determine the important design factors as well as precisely manufacture these parts. The EP (Electrolytic Polishing) process was used to obtain cleaner surfaces, and hardness tests were carried out after the EP process.