• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2001년도 추계학술발표대회 논문집
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• pp.105-110
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• 2001

Autoclave curing using the vacuum bagging method is widely used for the manufacture of advanced composite prepreg airframe structures. Due to increasing use of advanced composites, specific techniques have been developed to repair damaged composite structures. In order to repair the damaged part, it is required that the damaged areas be removed, such as skin and/or honeycomb core, by utilizing the proper method and then repairing the area by laying up prepreg (and core) then curing under vacuum using the vacuum bagging materials. It shall be cured either in an oven or autoclave per the original specification requirements. Delamination can be observed in the sound areas during and/or after a couple times exposure to the elevated curing temperature due to the repeated repair condition. This study was conducted for checking the degree of degradation of properties of the cured parts and delamination between skin prepreg and honeycomb core. Specimens with glass honeycomb sandwich construction and glass/epoxy prepreg were prepared. The specimens were cured 1 to 5 times at $260^{circ}F$ in an autoclave and each additionally exposed 50, 100 and 150 hours in the $260^{circ}F$ oven. Each specimen was tested for tensile strength, compressive strength, flatwise tensile strength and interlaminar shear strength. To monitor the characteristics of the resin itself, the cured resin was tested using DMA and DSC. As a results, the decrease of Tg value were observed in the specific specimen which is exposed over 50 hrs at $260^{circ}F$. This means the change or degradative of resin properties is also related to the decrease of flatwise tensile properties. Accordingly, minimal exposure on the curing temperature is recommended for parts in order to prevent the delation and maintain the better condition.

• 한국진공학회지
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• 제15권4호
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• pp.331-337
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• 2006

국제 직선형 충돌 가속기 (ILC; International Linear Collider). 자유전자 레이저 (FEL: Free Electron Laser)와 같은 차세대 가속기에 사용 할 공동형 빔위치 측정기 ( 공동형 BPM: cavity-type beam position monitor)를 일본 고에너지 연구소 (KEK; High Energy Accelerator Research Organization)와 공동으로 개발하였다. ILC 및 FEL의 운전을 위해서는 빔 기반 정렬 (beam-based alignment)과 되먹임 장치 (feedback system)가 필수적으로 요구되는데, 이를 위해서는 적절한 위치에 서브마이크론의 분해능을 지닌 빔위치 측정기를 설치하여야 한다 [1]. 공동형 BPM은 기계적인 정밀도에 매우 민감하므로 정밀한 제작과 미세한 기계적 조정을 통하여 성능을 달성하게 된다. 우리는 제작 오차를 줄이기 위하여 공진 공동, 빔 튜브, 도파관, 전기도입기 등 모든 부품을 조립 후 한꺼번에 진공 브레이징 하였다. 공동의 외주면에는 네 개의 튜닝 핀을 두어 공진주파수 및 x-y 격리도 (x-y isolation between coupled waveguide)를 미세 조정할 수 있도록 하였다. 현재 개발된 공동형 BPM 은 공진주파수는 6.422 GHz 이며, 공동 내경은 53.822 mm, 빔의 위치 측정 범위는 ${\pm}250 {\mu}m$이다. network analyzer를 관측하면서 튜닝핀을 이용하여 x-y 격리도를 -40 dB 이하로 조정할 수 있었다. 실제 KEK ATF2에서의 전자빔을 이용한 시험에서 신호의 모양, x-y 격리도, 민감도 등에서 만족한 결과를 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.237.1-237.1
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• 2014

Etching is one of the most important steps in semiconductor manufacturing. In etch process control a critical task is to stop the etch process when the layer to be etched has been removed. If the etch process is allowed to continue beyond this time, the material gets over-etched and the lower layer is partially removed. On the other hand if the etch process is stopped too early, part of the layer to be etched still remains, called under-etched. Endpoint detection (EPD) is used to detect the most accurate time to stop the etch process in order to avoid over or under etch. The goal of this research is to develop a hardware and software system for EPD. The hardware consists of an Optical Plasma Monitor (OPM) sensor which is used to continuously monitor the plasma optical emission intensity during the etch process. The OPM software was developed to acquire and analyze the data to perform EPD. Our EPD algorithm is based on the following theory. As the etch process starts the plasma generated in the vacuum is added with the by-products from the etch reactions on the layer being etched. As the endpoint reaches and the layer gets completely removed the plasma constituents change gradually changing the optical intensity of the plasma. Although the change in optical intensity is not apparent, the difference in the plasma constituents when the endpoint has reached leaves a unique signature in the data gathered. Though not detectable in time domain, this signature could be obscured in the frequency spectrum of the data. By filtering and analysis of the changes in the frequency spectrum before and after the endpoint we could extract this signature. In order to do that, first, the EPD algorithm converts the time series signal into frequency domain. Next the noise in the frequency spectrum is removed to look for the useful frequency constituents of the data. Once these useful frequencies have been selected, they are monitored continuously in time and using a sub-algorithm the endpoint is detected when significant changes are observed in those signals. The experiment consisted of three kinds of etch processes; ashing, SiO2 on Si etch and metal on Si etch to develop and evaluate the EPD system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• 한국소음진동공학회논문집
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• 제23권8호
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• pp.690-697
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• 2013

The magnets and vacuum chambers, which are the main facilities of the Pohang light source are installed on the storage-ring girders. System safety and reliability should be taken into account for the precise operating of the main facilities, so vibration analysis is essential to do this. Static and seismic analyses were performed for the design of structure considering safety, and also frequency and response spectrum analyses were performed for the precise alignment. With these results, the effects of surrounding vibration were checked. This paper explains about the design and vibration analysis of girder systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.182-182
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• 2012

Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• Applied Biological Chemistry
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• 제48권2호
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• pp.140-149
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• 2005

청국장 제품의 저장조건 및 유통기간 중에 상품성의 변화를 조사하기 위하여 살균온도, 저장온도 및 저장기간별로 관능적 특성과 색도의 변화를 측정하여 SAS program의 반응표면분석법으로 monitoring하였다. 진공 포장한 청국장의 명도(L)값은 살균온도, 저장기간 및 저장온도 모두 1% 이내에서 유의확률을 가지는 것으로 나타나 세 조건 모두가 명도에 영향성이 높은 것으로 나타났다. 적색도(a)값은 진공포장의 경우 살균온도와 저장온도가 높을수록 증가하며 각기 독립적으로 영향을 미치는 것으로 나타났다. 일반포장의 경우, 저장온도가 높을수록 유의적 값(10% 이내)이 영향을 미치는 것으로 나타났다. 황색도(b)값은 진공 포장한 경우, 저장기간과 저장온도는 1% 이내에서, 살균온도의 경우 5% 이내에서 유의확률을 가지는 것으로 나타났다. 또한 두 포장군 모두 정상점이 안장점의 형태로 나타났다. 관능적 평가 중 외관에 대한 적합성은 두 포장군 모두 저장온도가 1% 이내의 유의확률로 결정적인 영향을 주었고, 냄새에 대한 적합성은 진공포장의 경우 살균온도가 10% 이내의 유의확률로서 관련성이 있었으나, 일반포장은 저장기간이 1% 이내, 살균온도가 5% 이내 유의확률로서 영향성이 있는 것으로 나타났다. 맛에 대한 적합성에서는 진공포장한 경우 저장기간이 1% 이내의 높은 관련성이 있었고, 일반포장은 저장온도가 5% 이내의 유의확률로서 관련성이 있었다. 관능검사의 전체적인 평가에서는 진공포장의 경우 살균온도가 $61.92^{\circ}C$, 저장 온도 $6.79^{\circ}C$, 저장기간 56.48일에서 5.15로 최대 값을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.204-204
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• 1999

The plasma source ion implantation(PSII) technique which is a method using high negative voltage pulse in plasma system has the potential to change the surface properties of polymer. PSII technique increase the surface free energy by introducing polar functional groups on the surface so that it improves reactivity, hydrophilicity, adhension, biocompatability, etc. However, the mobility of polymer chains enables the modified surface layers to adapt their composition to interfacial force. This hydrophobic recovery interrupts the stability of modified surfaces to keep for the long time. In this study, poly(methyl methacrylate)(PMMA), poly(2-hydroxyethyl methacrylate)(PHEMA), and polu(2-hydroxypropyl methacylate)(PHPMA) for contact lens application, were modified to improve the wettability with PSII technique and were investigated the surface stabilities. Polymer film was prepared with solution casting(3 wt.% solution) and was annealed at 11$0^{\circ}C$ under vacuum oven to remove solvent completely and to eliminate physical ageing. The thickness of the film measured by scanning electron microscopy (SEM) and surface profilometer was about 10${\mu}{\textrm}{m}$. Polymers were treated with different kinds of gases, pulse frequency, pulse with, pulse voltage, and treatment time. Even though PMMA, PHEMA, and PHPMA have similar repeat unit structure, the optimal treatment conditions and the tendency to hydrophobic recovery were different. PHPMA, more hydrophilic polymer than PMMA and PHEMA showd better wettability and stability after mild treatment. Surface tensions were obtained by water and diiodomethane contact angle measurements to monitor the relation between hydrophobic recovery and polymer structure. Different ion species in plasma change the polar component and dispersion component of polymer surface. For better wettability surface, the increase of polar component was a dominant factor. We also characterized modified polymer surfaces using x-ray photoelectron spectroscopy(XPS), secondary ion mass spectrometry(SIMS), Fourier Transform infrared spectroscopy(FT-IR), and SEM.

• Journal of Electrical Engineering and Technology
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• 제7권6호
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• pp.959-964
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• 2012

Internal pressure of vacuum interrupter (VI) is one of the most important parameters in VI operation and may increase due to the outgassing from the materials inside VI or gas permeation through metal flange or ceramic vessel. The increase of the pressure above a certain level leads to the failures of switching or insulation. Therefore, an effective pressure check of VI is essential and an analysis of partial discharge (PD) characteristics is an effective monitoring method to identify the degree of the internal pressure of VI. This paper introduces a research work on monitoring the internal pressure of VI by analyzing PDs which were measured using a capacitive PD coupler. The authors have developed cost effective capacitive coupler based on the ceramic material that has an excellent insulation properties and the main component of the capacitive coupler is made by SrTiO3. Detectable internal pressure range and distinguishability of the internal pressure of VI were investigated. From the PD tests results, the internal pressure range, from $10^{-2}$ torr to 500 torr, can be monitored by PD measurements using the capacitive coupler and PD inception voltage (PDIV) follows the Paschen's law. In addition, rise time of PD pulse at 13.2kV decreases with the increase of the internal pressure of VI.