• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.22-23
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• 2011

As device dimensions shrink, it is increasingly important to develop fabrication methods that can create sub-15 nm features of regular or arbitrary geometry in a rapid, parallel, and efficient process. This talk will discuss approaches based on self-assembling hybrid polymers containing Si. The thin films of those materials systems can generate well-ordered periodic arrays of dots or lines. For achieving, long-range ordering, it is helpful to use lithographically-defined templates, which are in general much larger than the length-scale of self-assembled nanostructures. For example, the self-assembly of polymer nanostructures can easily be templated using an array of nanoscale topographical elements that act as guiding templates or surrogates for one of two microdomains. The solvent-vapor-induced tunability of pattern dimension and morphology will be discussed as well. Those material systems can excellently serve for high-precision self-assembly that can provide good resolution, reliability, and controllability and be considered as an option for a future nanomanufacturing technology.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2003년도 학술대회논문집
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• pp.381-385
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• 2003

In this paper, a co-axial type ozonizer varied with discharge gap was designed and manufactured for investigating $\circled1$ discharge characteristics with variation of output voltage power supply, flow rate and gap $\circled2$ ozone generation characteristics with variation of flow rate, gap and discharge power. pure oxygen was used as process gas of the co-axial type ozonizer. In this paper, a double cylindrical type superposed silent discharge type ozonizer which internal electrode can be produced a vacuum has been designed and manufactured. Discharge and ozone generation characteristics have been investigated in accordance with output voltage of power supply, flow-rate, discharge power and vacuum of internal electrode.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2769-2774
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• 2007

In vacuum ejector-diffuser systems where a finite volume secondary chamber is used, the secondary jet exhibits transient characteristics during start-up. A steady state is achieved after some time in which mass entrainment prevails indefinitely inside the ejector, though there is no flow from the secondary chamber. An attempt is made in this work to study the infinite entrainment of secondary jet into the primary jet from a finite secondary chamber, with the help of a computational fluid dynamics method. The present study is also intended to identify the operating range of vacuum ejector-diffuser systems where the steady flow assumption can be applied without uncertainty. The results obtained show that the only condition in which an infinite mass entrainment is possible is the generation of a re-circulation zone near the primary nozzle exit. The flow in the secondary chamber attains a state of dynamic equilibrium at this point. Steady flow assumption is valid only after this point.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.340-344
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• 2014

Ion pumps continue to be a staple in ultra-high vacuum (UHV) applications. Since their adoption as a primary UHV pump in the 1960's, it has been known that a variety of particles can emanate from within the ion pump and cause undesirable effects on current measurements and optics components. Historically the solution has been baffling and shielding which results in longer conductance paths to the ion pump. Those solutions can work, but require a larger pump and more vacuum plumbing to compensate for conductance losses. The first step was to fully understand the nature of the particles and their charges. Once those were characterized options for emissions reduction were evaluated. It was determined that an efficient design of shielding near the source of the particle generation site was the most cost effective solution. With a slight modification to the chamber of a small ion pump, internal shielding was developed that reduced the emissions by a factor of up to 1000 times.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.377-377
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• 2016

Under nanosecond-pulsed laser irradiation, light-absorbing thin films have been used for photoacoustic transmitters for ultrasound generation. Especially, nanostructured absorbers are attractive due to high optical absorption and efficient thermoacoustic energy conversion: for example, 2-dimensional (2-D) gold nanostructure array, synthetic gold nanoparticles, carbon nanotubes (CNTs), and reduced graphene oxides. Among them, CNT has been used to fabricate a composite film with polydimethylsiloxane (PDMS) that exhibits excellent photoacoustic conversion performance for high-frequency, high-amplitude ultrasound generation. Previously, CNT-PDMS nanocomposite films were made by using a high-temperature chemical vapor deposition (HTCVD) process for CNT growth. However, this approach is not suitable to fabricate large-area CNT films (>several cm2). This is because a chamber dimension of HTCVD is limited and also the process often causes nonuniform CNT growth when the film area increases. As an alternative approach, a solution-based process can be used to overcome these issues. We develop PDMS composite transmitters, based on the solution process, using several nanostructured light-absorbers such as CNTs, nanoink powders, and imprinted regular arrays of gold nanostructure. We compare fabrication processes of each composite transmitters and photoacoustic output performance.

• 한국진공학회지
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• 제8권4A호
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.360-360
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• 2011

In this work, SUS310S used for valve plate assembly was electron beam (EB) welded to determine the influence of the parametric conditions on the characteristics of the weld and to minimize porosity and micro-fissures among others. The evolution in the weld geometry and microstructure was examined as a function of the process conditions such as beam current and focusing current under a constant welding speed and accelerating voltage. The integrity of the EB welds in SUS310S was examined for defects (e.g. cracking, porosity, etc.), adequate penetration depth, and tolerable weld width deviation for the various welding conditions. Optical microscopy (OM), x-ray photoelectron spectroscopy analysis (XPS), scanning electron microscopy (SEM) and 3D micro-computed tomography (Micro-CT) for the cross section analysis of the electron beam welded SUS310S were utilized. The tensile strength and hardness were analyzed for the mechanical properties of the EB weld. At the 6 kV accelerating voltage, it was determined that a satisfactory penetration depth and desirable weld width deviation requires a beam current of 30 mA and a focusing current of 0.687 A at the welding speed of 25 mm/sec.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.72-72
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• 진공이야기
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• 제3권4호
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• pp.4-7
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• 2016

An X-ray Free Electron laser facility (PAL-XFEL) has been built in Pohang Accelerator Laboratory to provide X-ray FEL radiations for photon users. The machine consists of a 10 GeV normalconducting S-band linear accelerator and two undulator beamlines. The hard and soft X-ray beamlines will provide FEL radiations with wavelengths of 0.6 to 0.1 nm and 4.5 to 1 nm, respectively. Beam commissioning of PAL-XFEL is ongoing and user service will start in 2017. In this report, the PAL-XFEL layout and the working principle are discussed.

• 한국진공학회지
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• 제3권2호
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.