• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

• KIEAE Journal
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• 제3권3호
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• pp.19-25
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• 2003

The Address No.0 of Eco-friendly Architecture offers unique experience for those who visit the place to envisage the future architecture where nature, human and building exist in harmony. It is open to the general public including the students of elementary and secondary schools. This house has been built to provide opportunities for the general public to experience eco-friendly architecture. It's floor area is 42 pyung($140m^2$) and the overall site has the area of 180 pyung($600m^2$). The following illustrates some of its prominent features : ${\bullet}$ Remodeling of a traditional Korean residence ${\bullet}$ Application of passive solar systems ${\bullet}$ Use of clerestory windows and daylighting systems(washroom and machine room) ${\bullet}$ Operation of solar water heaters with flat plate collectors ${\bullet}$ Construction of Biotop(small ecological world) ${\bullet}$ Water circulation for Biotop by photovoltaic(150W) and wind power(400W) generation ${\bullet}$ Outdoor hot water supplied by all-glass evacuated solar tubes. Through this Address No.0 of Eco-friendly Architeture conclusions are as followings. 1. The array of tubes in collector has the best nice in that the number of tube is nine and the tilt angle is the latitude $+20^{\circ}$. 2. The thermal performance of the all-glass solar vacuum collector was excellent than of the flate-plate solar collector. 3. The adaption of new small wind power systems to buildings were proved to produce a profit if it is considered the expense of environment improvement and the wind speed increasing according to rise of building hight.

• 한국진공학회지
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• 제7권4호
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• pp.390-396
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• 1998

헬리콘(Helicon) 플라즈마로부터 중성입자 흐름을 생성하여 높은 에너지의 이온에 의한 기판의 물리적, 전기적 손상을 방지할 수 있는 실리콘 식각공정이 연구되었다. 기판의 하부에 영구자석을 설치하여 cusp모양의 자계를 형성하므로써 이온 및 전자를 기판으로부 터 제거되도록 하였고 이러한 방법으로 완전히 제거되지 않는 이온의 제거를 위해서 기판 하부에 양의 전압을 가하여 자계나 전계에 영향을 받지 않는 중성입자 흐름을 얻을 수 있도 록 하였다. 발생시킨 자계 및 전계의 의해 기판 상부에서의 전자밀도는 자계나 전계가 가해 지지 않은 경우에 비해 약1/1,000정도로 낮아졌으며, 이온밀도 또한 약1/10정도로 감소하였 다. 이러한 공정을 통해 얻어진 실리콘의 식각속도는 $Cl_2$와 10%의 SF6를 혼합하여 사용할 때 $8.5{\times}10^{-4}$Torr의 압력에서 약100$\AA$/min이하로 매우 낮았으며 실리콘의 식각이 비등방성 을 가지며 진행될 수 있음이 보여졌다.

• 한국진공학회지
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• 제7권2호
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• pp.82-87
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• 1998

$O_2$기체에 $NH_3/O_2$기체를 첨가하여 실리콘 표면에 산화막을 형성하는 $NH_3/O_2$산화법 에 의한 산화공정시 반응석영관 외부에 방출하는 기체는 $N_2,O_2$및 $H_2O$이며 극소량의 $CO_2$, NO 및 $NO_2$가 검출되었다. 두 종류의 산화제($O_2$ 및 $H_2O$)가 산화에 기여하며 성장률은 $NH_3$및 $O_2$ 의 부분압과 온도에 의해 결정되며, 그 기울기는 건식 및 습식 산화법의 중간에 평행 하게 위치함을 확인하였다. Auger Electron Spectroscopy(AES) 측정결과 $NH_3/O_2$ 산화막은 정확한 $SiO_2$의 화학량론을 가지며 $SiO_2/Si$계면에 발생하는 결합을 억제하며 고정전하의 발 생을 최소화함을 알 수 있었다. $NH_3/O_2$ 산화막(470$\AA$)의 항복전압을 57.5Volt이며, C-V특성 곡선을 축정한 결과 플랫밴드 전압은 0.29Volt이며 곡선의 형태는 이상곡선과 일치하였다.

• 한국진공학회지
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• 제4권S2호
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• pp.100-105
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120keV to a total dose range of $1\times 10^{17}$ions/$\textrm{cm}^2$ to $1\times 10^{18}$ions/$\textrm{cm}^2$ at various temperatures between $270^{\circ}C$ and $671^{\circ}C$. The microstructure changes by nitrogen implantation were analyzed by XRD and AES and wear behavior was evaluated by performing ball-on-disc type wear testing at various loads and sliding velocities under unlubricated condition. Nitrogen implantation produced ZrNx nitride above $3\times 10^{17}$ions/$\textrm{cm}^2$ as well as heavy dislocations, which resluted in an increase in microhardness of the implanted surface of up to 1400 $H_k$ from 200 $H_k$ of unimplanted substrate. Hardness was also found to be increased with increasing implantation temperature up to 1760 $H_k$ at $620^{\circ}C$. The wear resistance was greatly improved as total ion dose and implantation temperature increased. The effective enhancement of wear resistance at high dose and temperature is believed to be due to the significant hardening associated with high degree of precipitation of Zr nitrides and generation of prismatic dislocation loops.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.277-277
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• 2010

The capacity of the carbonaceous materials reached ca. $350\;mAhg^{-1}$ which is close to theorestical value of the carbon intercalation composition $LiC_6$, resulting in a relatively low volumetric Li capacity. Notwithstanding the capacities of carbon, it will not adjust well to the need so future devices. Silicon shows the highest gravimetric capacities (up to $4000\;mAhg^{-1}$ for $Li_{21}Si_5$). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. We focused on electrode materials in the multiphase form which were composed of two metal compounds to reduce the volume change in material design. A combination of electrochemically amorphous active material in an inert matrix (Si-M) has been investigated for use as negative electrode materials in lithium ion batteries. The matrix composited of Si-M alloys system that; active material (Si)-inactive material (M) with Li; M is a transition metal that does not alloy with Li with Li such as Ti, V or Mo. We fabricated and tested a broad range of Si-M compositions. The electrodes were sputter-deposited on rough Cu foil. Electrochemical, structural, and compositional characterization was performed using various techniques. The structure of Si-M alloys was investigated using X-ray Diffractometer (XRD) and transmission electron microscopy (TEM). Surface morphologies of the electrodes are observed using a field emission scanning electron microscopy (FESEM). The electrochemical properties of the electrodes are studied using the cycling test and electrochemical impedance spectroscopy (EIS). It is found that the capacity is strongly dependent on Si content and cycle retention is also changed according to M contents. It may be beneficial to find materials with high capacity, low irreversible capacity and that do not pulverize, and that combine Si-M to improve capacity retention.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.93-93
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• 2010

Semiconductor nanocrystal quantum dots (NQDs) have recently attracted considerable interest for use in photovoltaics. Band gaps of NQDs can be tuned over a considerable range by varying the particle size thereby allowing enhance absorption of solar spectrum. NQDs, synthesized using colloidal routes, are solution processable and promise for a large-area fabrication. Recent advancements in multiple-exciton generation in NQD solutions have afforded possible efficiency improvements. Various architectures have attempted to utilize the NQDs in photovoltaics, such as NQD-sensitized solar cell, NQD-bulk-heterojuction solar cell and etc. Here we have fabricated CdSe NQDs with the band gap of 1.8 eV to 2.1 eV on thin-layers of p-type organic crystallites (1.61 eV) to realize a donor-acceptor type heterojuction solar cell. Simple structure as it was, we could control the interface of electrode-p-layer, and n-p-layer and monitor the following efficiency changes. Specifically, surface molecules adsorbed on the NQDs were critical to enhance the carrier transfer among the n-layer where we could verify by measuring the photo-response from the NQD layers only. Further modifying the annealing temperature after the deposition of NQDs on p-layers allowed higher conversion efficiencies in the device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.413-413
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• 2010

In semiconductor manufacturing field, all equipments have various sensors to diagnosis the situations of processes. For increasing the accuracy of diagnosis, hundreds of sensors are emplyed. As sensors provide millions of data, the process diagnosis from them are unrealistic. Besides, in some cases, the results from some data which have same conditions are different. We want to find some information, such as data and knowledge, from the data. Nowadays, fault detection and classification (FDC) has been concerned to increasing the yield. Certain faults and no-faults can be classified by various FDC tools. The uncertainty in semiconductor manufacturing, no-faulty in faulty and faulty in no-faulty, has been caused the productivity to decreased. From the uncertainty, the rough set theory is a viable approach for extraction of meaningful knowledge and making predictions. Reduction of data sets, finding hidden data patterns, and generation of decision rules contrasts other approaches such as regression analysis and neural networks. In this research, a RGB sensor was used for diagnosis plasma instead of optical emission spectroscopy (OES). RGB data has just three variables (red, green and blue), while OES data has thousands of variables. RGB data, however, is difficult to analyze by human's eyes. Same outputs in a variable show different outcomes. In other words, RGB data includes the uncertainty. In this research, by rough set theory, decision rules were generated. In decision rules, we could find the hidden data patterns from the uncertainty. RGB sensor can diagnosis the change of plasma condition as over 90% accuracy by the rough set theory. Although we only present a preliminary research result, in this paper, we will continuously develop uncertainty problem solving data mining algorithm for the application of semiconductor process diagnosis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.358-358
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• 2010

Ion beam bombardment at low energy forms nanosize patterns such as ripples, dots or wrinkles on the surface of polymers in ambient temperature and pressure. It has been known that the ion beam can alter the polymer surface that induces skins stiffer or the density higher by higher compressive stress or strain energies associated with chain scissions and crosslinks of the polymer. Atomic scale structure evolution in polymers is essential to understand a stress generation mechanism during the ion beam bombardment, which governs the nanoscale surface structure evolution. In this work, Molecular Dynamics (MD) simulations are employed to characterize the phenomenon occurred in bombardment between the ion beam and polymers that forms nanosize patterns. We investigate the structure evolution of Low Density Polyethylene (LDPE) at 300 K as the polymer is bombarded with Argon ions having various kinetic energies ranging from 100 eV to 1 KeV with 50 eV intervals having the fluence of $1.45\;{\times}\;1014 #/cm2$. These simulations use the Reactive Force Field (ReaxFF), which can mimic chemical covalent bonds and includes van der Waals potentials for describing the intermolecular interactions. The results show the details of the structural evolution of LDPE by the low energy Ar ion bombardment. Analyses through kinetic and potential energy, number of crosslinks and chain scissions, level of local densification and motions of atoms support that the residual strain energies on the surface is strongly associated with the number of crosslinks or scissored chains. Also, we could find an optimal Ar ion beam energy to make crosslinks well.