• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1379-1382
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• 1997

Diamond-like carbon(DLC) thin films are produced by using a filtered cathodic vacuum arc(FCVA) deposition system. Different magnetic components, namely steering, focusing, and filtering plasma-optic systems, are used to achieve a stable arc plasma and to prevent the macroparticles from incorporating into the deposited films. Effects of magnetic fields on plasma behavior and film deposition are examined. The carbon ion energy is found to be varied by applying a negative (accelerating) substrate bias voltage. The deposition rate of DLC films is dependent upon magnetic field as well as substrate bias voltage and at a nominal deposition condition is about $2{\AA}/s$. The structural properties of DLC films, such as internal stress, relative fraction of tetrahedral($sp^3$) bonds, and surface roughness have also been characterized as a function of substrate bias voltages and partial gas($N_2$) pressures.

• Carbon letters
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• v.5 no.2
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• pp.55-61
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• 2004

Adsorption isotherms of p-nitrophenol from its aqueous solutions on two samples of activated carbon fibres and two samples of granulated activated carbons have been determined in the concentration range 40~800 mg/L (ppm). The surface of these carbons was modified by oxidation with nitric acid and oxygen gas, and by degassing the carbon surface under vacuum at temperatures of $400^{\circ}C$, $650^{\circ}C$ and $950^{\circ}C$. The oxidation of carbon enhances the amount of carbon-oxygen surface groups, while degassing decreases the amount of these surface groups. The adsorption of p-nitrophenol does not depend upon the surface area alone but appears to be influenced by the presence of oxygen groups on the carbon surface. The adsorption decreases on oxidation while the degassing of the carbon surface enhances the adsorption. The decrease in adsorption depends upon the strength of the oxidative treatment being much larger in case of the oxidation with nitric acid, while the decrease in adsorption on degassing depends upon the temperature of degassing. The results show that while the presence of acidic surface groups which are evolved as $CO_2$ on degassing suppress the adsorption of p-nitrophenol, the presence of non acidic surface groups which are evolved as CO on degassing tend to enhance the adsorption. Suitable mechanisms compatible with the results have been presented.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.430-436
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• 1996

We have grown superconducting thin films on various substrates using a pulsed laser deposition (PLD) method. $YBa_2Cu_3O_7-\delta$ (YBCO) superconducting thin films with the superconducting transition temperature ($T_{c. offset}$) of 87K were grown on Si substrates using yittria-stabilized zirconia (YSZ) and $CeO_2$ double buffer layers. We have developed a large area pulsed laser deposition system. The system was designed to deposit up to 6 different materials on a large area substrate up to 7.5cm in diameter without breaking a vacuum. The preliminary runs of the deposition of YBCO superconducting thin films on $SrTiO_3$ substrate using this system showed a very uniform thickness profile over the entire substrate holder area. $T_{c}$ of the deposited YBCO thin film, however, was scattered depending on the position and the highest value was 85K.

• Journal of Powder Materials
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• v.3 no.3
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• pp.181-187
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• 1996

Cobalt and VC powders were ball milled with M2 grade high speed steel powders under various ball to powder ratios. The powders milled under higher ball to powder ratio become finer, more irregular and have a broader size distribution, and thus possess a lower compressibility and a better sinterability regarding densification. Increasing the ball to powder ratio lowered the sintering temperature to obtain the density level necessary to isolate all the pores. Lowering the sintering temperature is very critical to maintain fine microstructure since grain and carbide coarsening are accelerated by higher sintering temperature due to more liquid phase formation. The powders obtained by ball milling at 20 to 1 ratio has the lowest compressibility but has the best sinterability, almost compatible to unmilled pure M2 powders. A sintered body over 97% theoretical density with fine microstructures having average grain size of ~10 microns was obtained from the powder by sintering at 1260 $^{\circ}C$ for 1 hour in vacuum. XRD results indicate that two types of carbides are mainly present in the sintered structure, MC and $M_{6}C$ type. The MC type carbides are more or less round shaped and mainly located at the grain boundaries whereas the $M_{6}C$ type are angular shaped and mainly located inside the grains.

• Resources Recycling
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• v.4 no.3
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• pp.19-25
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• 1995

A Study on the recovery of the valuable metals(Vanadium Molybdenium) was carried out using spent catalysts originated from desulfurizing process of oil refinery. Experiments consisted of pre-roasting for Sulfur and Carbon removal, soda roasting and leaching for the extraction of valuable metals, and selective precipitation of Vanadium and Molybdenium. Effects of temperature and time in roasting for Sulfur removal, of $Na_2CO_3$ concentrations in soda roasting, and of pulp density, temperature and time in leaching were investigated for the recovery of Vanadium and Molybdenium. A optimum condition having over 85% in yield of Vanadium and Molybdenium was found. In the selective precipitation, more than 98% of Vanadium and Molybdenium were obtained by the variation of pH and concentration of additives.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.24-27
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• 2004

ZnS nanoparticles were synthesized and doped with $Pr^{3+}\;and\;Mn^{2+}$. Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for $Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with $Pr^{3+}$, respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing.

• Journal of Surface Science and Engineering
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• v.45 no.3
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• pp.117-122
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• 2012

ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and $SnO_2$ (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO ($Ga_2O_3$:5.57 wt%) target. These films were post-annealed at temperature of 200, $300^{\circ}C$ in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore, it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.

• Applied Science and Convergence Technology
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• v.27 no.4
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• pp.65-69
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• 2018

We studied the critical pressure characteristics of an anode type ion beam source driven by both charge repulsion and diffusion mechanism. The critical pressure $P_{crit}$ of the diffusion type ion beam source was linearly decreased from 2.5 mTorr to 0.5 mTorr when the gas injection was varied in 3~10 sccm, while the $P_{crit}$ of the charge repulsion ion beam source was remained at 3.5 mTorr. At the gas injection of 10 sccm, the range of having normal beam shape in the charge repulsion ion beam source was about 6.4 times wider than that in the diffusion type ion beam source. An impurity of Fe 2p (KE = 776.68 eV) of 12.88 at. % was observed from the glass surface treated with the abnormal beam of the charge repulsion type ion beam source. The body temperature of the diffusion type ion beam source was observed to increase rapidly at the rate of $1.9^{\circ}C/min$ for 30 minutes and to vary slowly at the rate of $0.1^{\circ}C/min$ for 200 minutes for an abnormal beam and normal beam, respectively.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.148-154
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• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.24-24
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• 2010

Chalcopyrite $Cu(In,Ga)Se_2$ (CIGS) 화합물 반도체는 고효율 박막태양전지의 광 흡수층으로 사용되는 물질 중 가장 우수한 효율 (19.9%, NREL 2008)을 보유하고 있다. CIGS는 직접천이형 에너지밴드갭 (direct bandgap)을 가지고 있고, 광흡수계수가 $1{\times}10^5\;cm^{-1}$로서 반도체 중 서 가장 흡수율이 높은 재료에 속하여 두께 $1{\sim}2\;{\mu}m$의 박막으로도 고효율의 태양전지 제조가 가능하고, 또한 장기적으로 전기광학적 안정성이 매우 우수한 특성을 지니고 있다. 현재 고효율 CIGS 셀생성을 위해 널리 사용되고 있는 CIGS 흡수층 성장공정은 "co-evaporation(동시증발법)"과 2-step 공정이라 불리는 "sputter-selenization(스퍼터-셀렌화)" 방법이다. 동시증발법은 개별원소 Cu, In, Ga, Se 들을 고진공 분위기에서 고온 ($550{\sim}600^{\circ}C$)기판위에 증착하는 방법으로 소면적에서 가장 좋은 효율(~20%)을 보이는 공정이다. 하지만, 고온, 고진공 공정조건과 대면적 증착시 온도 및 조성 불균일 등의 문제점 등으로 상용화에 어려움이 있다. 스퍼터-셀렌화 공정은 1단계에서 스퍼터링 방식으로 CuGaIn 전구체를 증착하고, 2단계에서 고온($550{\sim}600^{\circ}C$)하에 $H_2Se$ 혹은 Se vapor와 반응시켜 CIGS를 생성한다. 일본의 Showa Shell와 Honda Soltec 등에 의해 이미 상업화 되었듯이, 저비용 대면적으로 상업화 가능성이 높은 공정으로 평가되고 있다. 하지만, 2단계에서 사용되는 $H_2Se$ 및 Se vapor의 유독성, 기상 Se과 금속전구체 간의 느린 셀렌화 반응속도, 셀렌화반응 후 생성된 CIGS 박막 두께방향으로의 Ga 불균일분포, 생성된 CIGS/Mo 계면 접착력 저하등의 문제점들이 해결되어야만 상업화에 성공할 수 있을 것이다. 본 Tutorial에서는 CIGS 물질의 열역학 상평형과 반응메카니즘에 대해 설명하고, 다양한 생성 공정들을 소개할 것이다.