• Proceedings of the KIPE Conference
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• 전력전자학회 2004년도 전력전자학술대회 논문집(2)
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• pp.670-672
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• 2004

In this paper, single phase boost converter with low current harmonic components and high power factor are proposed. A single-phase half-bridge rectifier based on a neutral point switch clamped scheme is proposed to draw a nearly unity power factor and regulate the DC link voltage. Three power switches are employed in the proposed rectifier. This rectifier is controlled to generate a bipolar or unipolar PWM voltage waveform on the AC side. The proposed converter is implemented by a digital signal processor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.48-51
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• 1991

Short channel Nonvolatile EEPROM memory devices were fabricated to CMOS 1M bit design rule, and reviews the characteristics and applications of SNOSFET. Application of SNOS field effect transistors have been proposed for both logic circuits and nonvolatile memory arrays, and operating characteristics with write and erase were investigated. As a results, memory window size of four terminal devices and two terminal devices was established low conductance stage and high conductance state, which was operated in “1” state and “0”state with write and erase respectively. And the operating characteristics of unit cell in matrix array were investigated with implementing the composition method of four and two terminal nonvolatile memory cells. It was shown that four terminal 2${\times}$2 matrix array was operated bipolar, and two termineal 2${\times}$2 matrix array was operated unipolar.

• Proceedings of the KIEE Conference
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.672-674
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• 2001

Axial magnetic field(AMF) type electrode can increase the interrupting capability of vacuum interrupters. But, this interrupting capability vary with design parameters such as shape of electrode, slits of contact, material of contact and so on. In this paper, shown arc characteristics of unipolar axial magnetic field type electrode for vacuum interrupter by design parameters such as shape of contact slits and diameter of contact. And, confirmed vacuum arc configuration by individual design parameter using high speed camera.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.855-858
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• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• Proceedings of the KIPE Conference
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• 전력전자학회 2014년도 추계학술대회 논문집
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• pp.33-34
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• 2014

In this paper, the inverter switch losses of BLDC motor for three types of PWM method and power devices was analyzed. When BLDC motor is driven at low currents, inverter switch losses for MOSFET is low because MOSFET operates like resistance. But, inverter switch losses for IGBT is higher than MOSFET due to its large turn-off losses. For low power inverter with MOSFET, the power losses of unified PWM is lower than that of unipolar and bipolar PWM.

• Proceedings of the KIEE Conference
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• 대한전기학회 2000년도 학술대회 논문집 전문대학교육위원
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• pp.122-128
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• 2000

The SRM is a simple and robust machine which is finding applications over a wide power and speed range. To properly evaluate the motor performance, a reliable model design is required. This paper explains the various excitation mode and winding configuration to analyze the torque performance of SRM. A number of different idealized current excitation patterns are introduced, using unipolar, bipolar & square excitation, and the output torques produced by the various winding configurations are compared. The electromagnetic torque of the SRM was calculated from the rate of change of co-energy with respect to angular displacement. The simulation result shows that 3-phase square excitation mode models have revealed higher torque performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.255-255
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• 2010

Metal-Insulator-Metal 구조의 $Al_2O_3$ ReRAM 소자를 플라스틱 기판 위에 제작하였다. $Al_2O_3$ 박막은 원자층 증착 방법으로 $150^{\circ}C$의 저온 공정에서 15nm 두께로 증착하였으며, 하부와 상부의 전극으로는 DC 스퍼터링 방법으로 증착된 백금전극을 이용하였다. 플라스틱 기판위에 제작된 $Al_2O_3$ ReRAM 소자는 unipolar 메모리 특성을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.370-370
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• 2010

The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.

• Proceedings of the KIEE Conference
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.121-125
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• 1993

This paper proposes two kinds of novel switching method for a single phase current-controlled voltage-type ac-to-dc converter. Proposed are modifications of the conventional hysteresis current control, and are named by the half suppressing method and unipolar method, respectively. The first one suppresses an inactive half of the four switching signals and uses active another half for current control. The second method uses only one, a quarter of switching signals suppresed the others. Both the simulation and experimental results show that proposed methods are more efficient in switch utilization and have comparable or better performance when compared with conventional method.