• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.285-286
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• 2014

Recently, the unipolar gate power source is preferred in inverter system because of cost reduction reason. In this case, designer uses 0V source for turning-off the switching devices instead of negative voltage at Vee source. If the gate driver circuit has some stray inductance, the gate voltage would happen a surge voltage. This paper analyzes that of stray inductance effect during the switching behavior in the circuit and the proposed solutions were verified by pulse test.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1149-1154
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• 2014

To observe the tunneling phenomenon of oxide semiconductor transistor, The Indium-gallum-zinc-oxide thin film transistors deposited on SiOC as a gate insulator was prepared. The interface characteristics between a dielectric and channel were changed in according to the properties of SiOC dielectric materials. The transfer characteristics of a drain-source current ($I_{DS}$) and gate-source voltage ($V_{GS}$) showed the ambipolar or unipolar features according to the Schottky or Ohmic contacts. The ambipolar transfer characteristics was obtained at a transistor with Schottky contact in a range of ${\pm}1V$ bias voltage. However, the unipolar transfer characteristics was shown in a transistor with Ohmic contact by the electron trapping conduction. Moreover, it was improved the on/off switching in a ambipolar transistor by the tunneling phenomenon.

• Journal of Physiology & Pathology in Korean Medicine
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• v.18 no.2
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• pp.522-527
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• 2004

The aim of this study is to investigate the effect of Naegwan-Acupuncture stimulation on the relationship of change in electrocardiopgraphy(EGG). For this purpose, 11 normal volunteers were acupunctured at Naegwan acupoint using the method of Young-Su-Bo-Sa. Then, we measured and observed the change of augmented unipolar limb leads aVR, aVL and aVF in EGG. In aVR, Naegwan acupuncture treated groups were increased the activity of PR interval and PR segment compared to the control group. In aVL, Naegwan acupuncture treated groups were increased the activity of R wave amplitude, PR interval and PR segment. In aVF, Naegwan acupuncture treated groups were increased the activity of S wave amplitude and PR interval. These results suggested that Naegwan acupuncture stimulation play an important role to the activities of EGG.

• The Korean Journal of Physiology
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• v.2 no.1
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• pp.53-58
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• 1968

In order to study the electrocardiogram of small animals authors deviced a fixing apparatus in the ventral resting position of rabbit and an attaching electrodes. Normal electrocardiograms of 8 adult rabbits were studied with author's improved fixing apparatus and electrodes. Leads taken were the standard limb lead, augmented unipolar leads and the unipolar precordial leads. The total numbers of various leads were eleven altogether. Results obtained in this study may be summarized as follows: 1. The details of the methods used to record and measure the six standard frontal plane leads and the five precordial leads of the rabbit electrocardiogram in the ventral resting position were described. The fixing apparatus of rabbits in ventral position are shown in Figure 1 and the attaching electrodes are shown in Figure 2. 2. The electrocardiographic changes in ventral position were more stable than in dorsal position in each lead. 3. The analysis of the amplitude, duration and other values of various waves are shown in Table 1 and Figure 3. 4. The electrocardiogram of rabbits showed decreased heart rate in ventral position than dorsal one. 5. The mean electrical axis of QRS complex in ventral position were +44.12 degrees and in dorsal position were +25.5 degrees.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.257-257
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• 2010

최근 저항 변화 메모리는 종래의 비휘발성 기억소자인 Flash memory보다 access time(writing)이 105배 이상 빠르고, DRAM과 같이 2~5 V 이하의 낮은 전압 특성 및 간단한 제조 공정 등으로 차세대 비휘발성 메모리 소자로 주목 받고 있지만, 여전히 소자의 Endurance 및 Retention 특성 등의 신뢰성 문제를 해결해야 할 과제로 안고 있다. 이러한 문제점들을 해결하기 위해 페로브스카이트계 산화물 또는 이원 산화물 등의 다양한 저항 변화 물질에 대한 연구가 진행되고 있다. 하지만, 현재 주로 연구되고 있는 금속 산화물계 물질들은 그 제조 공정상 산소에 의한 다수의 산소 디펙트 형성과 제작 시 쉽게 발생할 수 있는 표면 오염의 문제점을 안고 있다. 본 연구는 기존의 금속 산화물계 박막의 제조 공정에서 발생하는 문제점을 해결하기 위해 질화물계 박막을 저항변화 물질로 도입함으로써, 기존의 저항 변화 물질의 장점인 간단한 공정 및 저전압/고속 동작 특성을 동일하게 유지 할 뿐 아니라, 그 제조 공정상 발생하는 다수의 산소 디펙트와 표면 오염의 문제를 해결함으로써, 보다 고효율을 가지며 재현성이 우수한 메모리 소자를 구현 하고자 한다 [1, 2]. 본 연구를 위해 Pt/AlN/Pt 구조의 Metal/Insulator/Metal(MIM) 저항 변화 메모리를 제작 하였다. 최적의 저항 변화 특성 조건을 확인하기 위해 70~200nm까지 두께 구분과 N2 가스 분위기의 열처리 온도를 $200{\sim}600^{\circ}C$까지 진행 하였다. 본 소자의 저항 변화 특성 실험은 Keithley 4200-SCS을 이용하여 진행 하였다. 실험 결과, AlN의 최적의 두께 및 열처리 온도 조건은 130nm/$500^{\circ}C$였으며, 안정적인 unipolar 저항 변화 특성을 확인 활 수 있었다.

• The Transactions of the Korea Information Processing Society
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• v.1 no.4
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• pp.479-489
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• 1994

At the present time, it is an important problem that we are to select a transmission line code for the very-high speed optical transmission system which can confidentially transfer the original information signal sequence efficiently, as it is to be the large capacity and the economization for the optical digital transmission system to transfer the information signal sequence at the very-high speed. Therefore, this paper is to select first the proper transmission line codes for the high speed(more than Mb/s) optical transmission system of the proposed two-level unipolar transmission line codes up to date, and to decide a mBIZ (m Binary with One Zero insertion) code as an optimal transmission line code for the very-high speed optical transmission system, resulting from analyzing the performance at the requirements of the transmission line code, such as the maximum consecutive identical digits, the transmission delay time, the increasing rate of clock, the mark rate, the circuit complexity, the supervision of transmission line error, and power spectrum among the selected transmission line codes.

• Journal of Applied Reliability
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• v.16 no.1
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• pp.1-6
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• 2016

Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.441-447
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• 2001

A study on the TiN coating layer in small holes on the Purpose of die-casting dies application has been performed with a PACVD process. For the hole having diameter of 4 mm. the uniform TiN coating layer in the hole to the depth of 20 mm was achieved using DC pulsed power source. To understand the forming mechanism of TiN coating layer, plasma diagnosis on Ti, $N_{2}^{+}$ and A $r^{+}$ emissions was carried out during plasma coaling process by optical emirssion spectroscopy. When the duty ratio was equal or over 50%, the Peaks of Ti,$ N_{2}^{+}$ and A $r^{+}$ emission were obviously observed. While duty ratio was equal or under 28.6%, no peaks for Ti, $N_{2}^{+}$ and A $r^$ were observed and the formation of TiN coating layer was rarely observed. For the coating in 4 mm hole diameter, the coating layer with bipolar process was two times deeper than that with unipolar process.

• The Plant Pathology Journal
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• v.18 no.6
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• pp.328-332
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• 2002

Wheat samples showing typical spot blotch symptoms on stems and sheaths were collected from the field after physiological maturity, and were sealed in paper bags and stored in the laboratory at room temperature to study the survival of Bipolaris sorokiniana conidia on wheat straw. The materials were observed at monthly intervals to assess the conidia viability during storage. After 4 months, the frequency of individual conidia already present on wheat straw at the time of sampling was reduced and appeared to be progressively replaced by the formation of round structures consist-ing of conidia aggregates. After 5 months, distinct, individual conidia were no longer detected, and only 'clumps of conidia' were observed. These dark black aggregates or 'clumps of conidia’measured 157-170$\mu\textrm{m}$ in diameter and were grouped into boat-shaped olivacious conidia showing thick wall and measuring 50-82$\times$20-30$\mu\textrm{m}$. The germination was unipolar and below 0.5%, suggesting the occurrence of dormancy, In contrast, individual conidium produced on wheat during the growing season were 96-130$\times$16-20$\mu\textrm{m}$, slightly curved, hyaline to light pale, and euseptate with a bipolar germination reaching 98-100%. Bipolaris sorokiniana conidia produced on PDA were 55-82$\times$20-27$\mu\textrm{m}$, tapered at both ends, dark brown to olivacious, distoseptate, showed up to 1% germination, and were predominantly unipolar. Results of the present study suggest that B. sorokiniana conidia belonged to two different physiological categories corresponding to the pathogen's infection phase and its survival, respectively. The infection phase is characterized by a high germination percentage as opposed to the survival phase harboring apparent dormancy.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.2
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• pp.227-237
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• 2002

A numerical technique for simulating the aggregation of charged particles was presented with a Brownian dynamic simulation in the free molecular regime. The Langevin equation was used for tracking each particle making up an aggregate. A periodic boundary condition was used for calculation of the aggregation process in each cell with 500 primary particles of 16 nm in diameter. We considered the thermal force and the electrostatic force for the calculation of the particle motion. The electrostatic force on a particle in the simulation cell was considered as a sum of electrostatic forces from other particles in the original cell and its replicate cells. We assumed that the electric charges accumulated on an aggregate were located on its center of mass, and aggregates were only charged with pre-charged primary particles. The morphological shape of aggregates was described in terms of the fractal dimension. In the simulation, the fractal dimension for the uncharged aggregate was D$\_$f/ = 1.761. The fractal dimension changed slightly for the various amounts of bipolar charge. However, in case of unipolar charge, the fractal dimension decreased from 1.641 to 1.537 with the increase of the average number of charges on the particles from 0.2 to 0.3 in initial states. In the bipolar charge state, the average sizes of aggregates were larger than that of the uncharged state in the early and middle stages of aggregation process, but were almost the same as the case of the uncharged state in the final stage. On the other hand, in the unipolar charge state, the average size of aggregates and the dispersion of particle volume decreased with the increasing of the charge quantities.