• 한국진공학회지
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• 제5권3호
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• pp.223-228
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• 1996

$SiO_2$ insulator layers on InSb have been prepared by remote PECVD system a low temperature below $200^{\circ}C$. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the $SiO_2$ were studied. The InSb MIS device using $SiO_2$ was fabricated and measured its current-voltage and capacitance-voltage characteritance-voltage charateristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throughout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26nA/$\textrm{cm}^2$ at 0.75MV/cm , and the breakdown voltage was about 1MV/cm. The interface-stage density at mid-bandgap extracted from 1MHz C-V measurement was $54\times 10^{11}\textrm{cm}^2-2V^{-1}$.

• 전자공학회논문지A
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• 제33A권12호
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

• Nonlinear Functional Analysis and Applications
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• 제28권2호
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• pp.589-599
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• 2023

The object of this study is to introduce a new subclass of univalent analytic functions on the open unit disk. This subclass is created by utilizing univalent analytic functions with negative coefficients. We first explore the specific properties that functions in this subclass must possess before examining their coefficient characterization. By applying this approach, we observe several fascinating features, including coefficient approximations, growth and distortion theorems, extreme points and a demonstration of the radius of starlikeness and convexity for functions belonging to this subclass.

• 한국강구조학회 논문집
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• 제12권5호통권48호
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• pp.503-513
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• 2000

본 연구에서는 구조물의 최적설계문제를 다를 때 나타나는 퍼지성을 고려하는 동시에 대립되는 기준들을 다루기 위해 중요도를 적용 유전자알고리즘 및 퍼지이론에 의한 이산형의 다목적 함수를 갖는 트러스구조물의 최적화를 시도하는 다목적 이산화 최적화 프로그램을 개발하였다. 그리고 개발된 프로그램을 적용하여 10부재철골트러스에 대한 설계 예를 들어 비교 고찰하였다. 본 연구를 통해 평면트러스구조물에대한 응력해석 및 최적설계가 일률적으로 처리될 수 있는 통합 시스템화된 퍼지-유전자알고리즘에 의한 다목적최적 구조설계가 가능하게 되었다. 특히 일반최적설계에서 처리되지 않는 불확실한 제약조건에 대한 경우에 대하여도 피지이론을 도입함으로써 가능하게 되어 보다 구조물의 합리적인 최적설계가 가능하게 되었다.