• Title/Summary/Keyword: uniform grain size

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Influence of Residual Oxygen on the growth of AlN Thin Films with Substrate Temperature (기판 온도 변화에 따른 AlN 박막 성장에 잔류 산소가 미치는 영향)

  • Kim, Byoung-Kyun;Lee, Eul-Tack;Kim, Eung-Kwon;Jeong, Seok-Won;Roh, Yong-Han
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.5
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    • pp.463-467
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    • 2008
  • Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

Random-Oriented (Bi,La)4Ti3O12 Thin Film Deposited by Pulsed-DC Sputtering Method on Ferroelectric Random Access Memory Device

  • Lee, Youn-Ki;Ryu, Sung-Lim;Kweon, Soon-Yong;Yeom, Seung-Jin;Kang, Hee-Bok
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.6
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    • pp.258-261
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    • 2011
  • A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

Characterization and Transformation of 0.52%C steels for Wheel Bearing Units Produced by High Frequency Induction Hardening after Hot Forging (열간단조 후 고주파 유도경화에 의해 제조된 휠 베어링 유니트용 0.52%C강의 특성과 변태거동)

  • Choi, Byung-Young
    • Korean Journal of Metals and Materials
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    • v.48 no.12
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    • pp.1103-1108
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    • 2010
  • We fabricated flanged outer races for wheel bearing units using 0.52%C clean steels, and then characterized and studied the transformation behavior. The outer races produced by hot forging and high frequency induction hardening in this study were analyzed through microstructural characterization using OM, SEM, TEM, and X-ray diffractometer and their microhardness depth profiles of the raceway contacted by balls were measured using MVH tester. The surface hardened layers with a uniform hardness profile in the raceway consisting of very fine martensite with sub-micron sized retained austenite could be formed for very short time during high frequency induction hardening after hot forging. The very fine martensite may be transformed on rapid cooling, from the inhomogeneous austenite nucleated on rapid heating in small particles of pearlitic cementite fragmentated by hot forging. On the other hand the sub-micron sized retained austenite may be chemically stabilized due to their extremely small size, from the small austenite nucleated at the grain boundaries.

Manufacture and Surface Structure Characteristics of Mn-Doped (K, Na)NbO3 Films

  • Kim, Yeon Jung;Byun, Jaeduk;Hyun, June Won
    • Journal of Surface Science and Engineering
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    • v.54 no.1
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    • pp.18-24
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    • 2021
  • KNN is widely used in the electronic industry such as memory devices, sensors, and capacitors due to various structural, electrical, and eco-friendly properties. In this study, Mn-doped KNN was prepared by adopting a sol-gel method with advantages of low cost and large area thin film fabrication. The Mn-doped KNN thin films were deposited by annealing in air for 1 hour and 700℃. The surface morphology characteristics and grain size of the heat-treated KNN were observed by SEM and AFM, and we used the X-ray diffraction for measuring the crystal phase of KNN. The XRD analysis results show that the fabrication of (K0.5Na0.5)(Nb1-xMnn)O3 thin films by sol-gel method in the thin film process of this experiment was stable in the perovskite phase of c-axis orientation. The SEM and AFM results show that the cracks were not confirmed from the fracture surface data of KNN thin films and were densely deposited with thin films with uniform thickness.

Effect of dopants(Tri-valent, Penta-valent) on the electrical and optical properties of SnO2 based transparent electrodes

  • Kim, G.W.;Sung, C.H.;Seo, Y.J.;Park, K.Y.;Heo, S.N.;Lee, S.H.;Koo, B.H.
    • Journal of Ceramic Processing Research
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    • v.13 no.spc2
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    • pp.394-397
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    • 2012
  • In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

Enhanced Piezoelectric Degradation of Tetracycline Using Single-Atom Cu Anchored on t-BaTiO3

  • Shu Ye;Jing Cheng;Zeda Meng;Won-Chun Oh
    • Korean Journal of Materials Research
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    • v.34 no.9
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    • pp.422-431
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    • 2024
  • Hydrothermal and ultrasonic processes were used in this study to synthesize a single-atom Cu anchored on t-BaTiO3. The resulting material effectively employs vibration energy for the piezoelectric (PE) catalytic degradation of pollutants. The phase and microstructure of the sample were analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and it was found that the sample had a tetragonal perovskite structure with uniform grain size. The nanomaterial achieved a considerable increase in tetracycline degradation rate (approximately 95 % within 7 h) when subjected to mechanical vibration. In contrast, pure BaTiO3 demonstrated a degradation rate of 56.7 %. A significant number of piezo-induced negative charge carriers, electrons, can leak out to the Cu-doped BaTiO3 interface due to Cu's exceptional conductivity. As a result, a single-atom Cu catalyst can facilitate the separation of these electrons, resulting in synergistic catalysis. By demonstrating a viable approach for improving ultrasonic and PE materials this research highlights the benefits of combining ultrasonic technology and the PE effect.

Fabrication High Covered and Uniform Perovskite Absorbing Layer With Alkali Metal Halide for Planar Hetero-junction Perovskite Solar Cells

  • Lee, Hongseuk;Kim, Areum;Kwon, Hyeok-chan;Moon, Jooho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.427-427
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    • 2016
  • Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

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Effect of Magnetic Field Annealing on Microstructure and Magnetic Properties of FeCuNbSiB Nanocrystalline Magnetic Core with High Inductance

  • Fan, Xingdu;Zhu, Fangliang;Wang, Qianqian;Jiang, Mufeng;Shen, Baolong
    • Applied Microscopy
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    • v.47 no.1
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    • pp.29-35
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    • 2017
  • Transverse magnetic field annealing (TFA) was carried out on $Fe_{73.5}Cu_1Nb_3Si_{15.5}B_7$ nano-crystalline magnetic core with the aim at decreasing coercivity ($H_c$) while keeping high inductance ($L_s$). The magnetic field generated by direct current (DC) was applied on the magnetic core during different selected annealing stages and it was proved that the nanocrystalline magnetic core achieved lowest $H_c$ when applying transverse field during the whole annealing process (TFA1). Although the microstructure and crystallization degree of the nanocrystalline magnetic core exhibited no obvious difference after TFA1 compared to no field annealing, the TFA1 sample showed a more uniform nanostructure with a smaller mean square deviation of grain size distribution. $H_c$ of the nanocrystalline magnetic core annealed under TFA1 decreased along with the increasing magnetic field. As a result, the certain size nanocrystalline magnetic core with low $H_c$ of 0.6 A/m, low core loss (W at 20 kHz) of 1.6 W/kg under flux density of 0.2 T and high $L_s$ of $13.8{\mu}H$ were obtained after TFA1 with the DC intensity of 140 A. The combination of high $L_s$ with excellent magnetic properties promised this nanocrystalline alloy an outstanding economical application in high frequency transformers.

Advanced Transmittance and Surface-Morphology of CdS thin films prepared by chemical bath deposition using various complexing agents for solar cells (용액 증착법으로 증착된 CdS 박막의 제조와 고상과 액상 화합제에 따른 표면 특성 비교)

  • Yoo, Beom-Keun;Kim, Jin-Sang;Park, Yong-Wook;Choi, Doo-Jin;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.456-456
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    • 2008
  • In the past few years, the deposition and characterization of cadmium sulfide semiconducting thin films has received a considerable amount of interest due to their potential application in the area of electronic and opto-electronic devices fabrications. Polycrystalline CdS thin films posses good optical transmittance, wide band-gap and electrical properties makes it as one of the ideal material for their application to solar cell fabrication. Cadmium sulfate thin films were deposited by the chemical bath deposition method using tartaric acid and triethanolamine as a complexing agent. Deposition parameters such as pH, temperature, deposition time and concentration of the reactant species were optimized so as to obtain reflecting, good adherent uniform thin films on the glass substrate. Reaction mechanism of the thin film formation is also reported. The crystallographic structure and the crystallite size were studied by the X-ray diffraction pattern. The optical band-gap of deposited film is identified by measuring the transmittance in the visible region. Temperature dependence of resistivity confirmed the semiconducting behavior of the film. Scanning electron micrographs (SEM) showed the presence of grain particles of size 50 nm.

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The Properties of Sintered Body by Using the Slip Casting Process with Remained Dental Zirconia Block after Machining (치과용 지르코니아 코어 가공후의 잔여물을 활용하여 주입성형법으로 제조한 소결체의 특성)

  • Kim, Sang-Su;Lee, Dong-Yoon;Seo, Jeong-Il;Bae, Won-Tae
    • Journal of Technologic Dentistry
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    • v.34 no.2
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    • pp.75-81
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    • 2012
  • Purpose: All ceramic crown, made from zirconia instead of metal for core material, is recognized the best esthetical prosthesis. Recently, high-priced zirconia blocks and expensive CAD/CAM machines come into use for making zirconia core. In this study, slip casting process is adapted to evaluate the possibility of the recycling the remained parts of zirconia block after machining. Methods: Remained zirconia blocks were reduced to powders with zirconia mortar, and screened with 180 mesh sieve. Passed powders were ball milled under various conditions to obtain the optimum zirconia slip for casting. Solid casting method was used for casting the specimens with plaster mold. Formed specimens were dried and biscuit fired at $1,000^{\circ}C$ for 1 hour. Biscuit fired specimens were finished with exact shape of square pillar. Finished specimens were fired from $1,200^{\circ}C$ to $1,550^{\circ}C$ at $50^{\circ}C$ intervals for 1 hour. Linear shrinkage, apparent porosity, water absorption, bulk density, and flexural strength were tested. Microstructures were observed by SEM. Results: Above examinations indicated that the optimum firing temperture was $1,500^{\circ}C$, and when fired at this temperature for 1 hour, apparent porosity was 0% and flexural strength was 680MPa. SEM photomicrographs showed uniform 200~300nm grain size, which is equal with microcture of sintered commercial zirconia block. when compare 24% linear shrinkage of cast specimen with 20% linear shrinkage of CAD/CAM machined block, it was estimated that the size controlling of cast core was not so difficult. Conclusion: According to the all of this experimental results, the cast zirconia core produced from the remained parts of zirconia block was possible to use for all ceramic denture.