• 한국표면공학회지
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• 제29권6호
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• pp.847-850
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• 1996

The bi-layered films composed of Co-Cr-Ta layers and paramagnetic $Co_{67}Cr_{33}$ underlayer were deposited by suing Facing Targets Sputtering(FTS). The effects of $Co_{67}Cr_{33}$ underlayer on the crystallographic and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}Cr_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was imporved by the $Co_{67}Cr_{33}$ underlayer rather than Ti ones. However, te coercivity H$_{c\bot}$ of Co-Cr-Ta layers deposited on $Co_{67}Cr_{33}$ underlayer was as low as 250 Oe even at substrate temperature of $220^{\circ}C$. This H$_{c\bot}$ decrease seems to be attributed to the effect of the $Co_{67}Cr_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• 한국표면공학회지
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• 제24권1호
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• pp.16-16
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• 1991

Generally brittle eta phase produced during TiC deposition has a effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η), phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase)have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as follows; 1. by inserting underlayer eta phase were decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest grain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• 한국표면공학회지
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• 제25권1호
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• pp.16-23
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• 1992

Generally brittle eta phase produced during TiC deposition has a bad effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η) phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase) have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as fellows; 1. by inserting underlayer eta phase was decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest gain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• 한국재료학회지
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• 제10권1호
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• pp.90-96
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• 2000

Underlayer의 종류 및 두께가 Al 박막의 배향성 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로서 sputtering 방식으로 증착되는 Ti와 TiN이 적층된 구조인 Ti/TiN이 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하였고, $400^{\circ}C,\;N_2$ 분위기에서 열처리하면서 면저항의 변화를 조사하였다. Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 10nm 이상이면 우수한 Al <111> 배향성을 나타냈으며 Al-Ti 반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. Ti와 Al사이에 TiN을 적용함에 의해 Al <111> 배향성은 나빠지나 Al-Ti 반응에 의한 면저항의 증가는 억제할 수 있었다. Ti/TiN underlayer의 경우, 우수한 Al <111> 배향성을 확보하기 위한 Ti의 최소두께는 20nm이었고, Al-Ti 반응을 억제하기 위한 TiN의 최소두께는 20nm이었다.

• 한국자기학회지
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• 제6권4호
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• pp.235-241
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• 1996

수직자기 기록매체를 위해 스퍼터링법으로 Co/Pd 및 Co/Pt 다층막을 형성하였으며 Pd 및 Pt 바닥층의 증착 압력이 다층막의 자화거동 및 보자력에 미치는 영향에 대해 연구하였다. Co/Pd 다층막의 경우 보자력이 바닥층의 증착 압력에 매우 민감하여 바닥층 증착압력만을 조절함으로써 보자력을 크게 증가시킬 수 있었으나 Co/Pt 경우 바닥층의 증착압력 조절에 의한 보자력 증대효과는 미미하였다. 바닥층의 종류 및 증착압력에 따른 다층막의 보자력 변화를 바닥층의 표면 거칠기 및 다층막 증착착시의 계면상태 변화의 측면에서 설명할 수 있었으며 이는 바닥층의 증착압력의 증가에 따른 다층막의 수직이방성 에너지 감소 및 자화반전 기구의 변화와도 연관시킬 수 있었다. 다층막의 Kerr 회전각은 바닥층의 종류 및 증착압력에는 거의 의존하지 않는 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta\theta_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 200Oe. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.

• 공업화학
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• 제22권1호
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• pp.98-103
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• 2011

DSSC의 광전 효율 증대와 Pt 상대전극의 접착성 향상을 위하여 FTO (Fluorine-doped Tin Oxide) 유리면에 Ni underlayer를 전기 도금 후 Pt 층을 전기 도금하였다. Ni underlayer는 $10mA/cm^2$에서 2 min 동안 도금한 경우 Ni 층과 FTO 면사이의 접착성이 가장 우수하게 나타났으며, Ni underlayer를 $10mA/cm^2$에서 2 min, Pt 층을 $5mA/cm^2$에서 1 min 동안 전기 도금한 상대전극의 XRD 분석 결과 Ni 및 Pt의 금속 회절 peak들을 관찰 할 수 있었다. 이렇게 제조한 상대전극을 사용하여 DSSC의 impedance 측정 결과 75 ohm의 가장 낮은 저항을 나타냈으며, 광전 효율은 5.6%로서 가장 높은 값을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.7-10
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• 1992

CoNiCr/Cr and CoCrTa/Cr for longitudinal magnetic recording media were. prepared on Coming 7059 glass by RF magnetron sputtering. The thickness of Cr underlayer was varied from 500 to $3000{\AA}$ and. that of magnetic layer was $700{\AA}$. Coercivity and squareness were measured using V.S.M.(vibrating sample magnetometer). The coercivity of films increased with increasing Cr thickness when the films were unannealed. The coercivity of the films annealed in a 10 mtorr vacuum increased initially with annealing time and then saturated with further increase in annealing time. The coercivity value difference between the unannealed and annealed films increased with increasing the thickness of Cr underlayer No significant change was found in squareness after anneal, regardless of Cr underlayer thickness.

• 한국진공학회지
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• 제9권4호
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• pp.394-399
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• 2000

Underlayer의 종류 및 두께가 Al 박막의 texture 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로는 ionized physical vapor deposition(I-PVD)에 의해 제조된 Ti와 I-PVD Ti 위에 metalorganic chemical vapor deposition(MOCVD)에 의해 제조된 TiN을 적층한 구조가 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하고, $400^{\circ}C$, $N_2$분리기에서 열처리하면서 면저항의 변화를 조사하였다. I-PVD Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 5 nm이어도 Al 박막이 우수한 <111> 배향성을 나타내었으나, Al-Ti반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. I-PVD 와 Al 사이에 MOCVD TiN을 적용함에 의해 Al <111> 배향성의 큰 저하없이 Al-Ti 반응에 의한 면저항의 증가를 억제할 수 있었으며, MOCVD TiN의 두께가 4 nm 이하일 때 특히 우수한 Al <111> 배향성을 나타내었다.