• Title/Summary/Keyword: ultra-thin layer

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Characteristics of Bi2212 Thin Film Fabricated by Layer-by-Layer Deposition at an Ultra Low Growth rate (초저속 순차증착으로 제작한 Bi2212 박막의 특성)

  • Lee, Hee-Kab;Park, Yong-Pil;Cheon, Min-Woo
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.119-121
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    • 2002
  • $Bi_2Sr_2CuO_x$ thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method, 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

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Flexible Durability of Ultra-Thin FPCB (초박형 FPCB의 유연 내구성 연구)

  • Jung, Hoon-Sun;Eun, Kyoungtae;Lee, Eun-Kyung;Jung, Ki-Young;Choi, Sung-Hoon;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.69-76
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    • 2014
  • In this study, we developed an ultra-thin flexible printed circuit board(FPCB) using the sputtered flexible copper clad laminate. In order to enhance the adhesion between copper and polyimide substrate, a NiMoNb addition layer was applied. The mechanical durability and flexibility of the ultra-thin FPCB were characterized by stretching, twisting, bending fatigue test, and peel test. The stretching test reveals that the ultra-thin FPCB can be stretched up to 7% without failure. The twisting test shows that the ultra-thin FPCB can withstand an angle of up to $120^{\circ}$. In addition, the bending fatigue test shows that the FPCB can withstand 10,000 bending cycles. Numerical analysis of the stress and strain during stretching indicates the strain and the maximum von Mises stress of the ultra-thin FPCB are comparable to those of the conventional FPCB. Even though the ultra-thin FPCB shows slightly lower durability than the conventional FPCB, the ultra-thin FPCB has enough durability and robustness to apply in industry.

Ultra Thin Film Encapsulation for Flexible OLED (플렉시블 유기 EL 소자를 위한 초박막 보호층)

  • Lim, J.S.;Shin, P.K.;Lim, K.B.;Song, J.H.;Kim, C.Y.;Lee, B.S.;Jeung, Y.S.;Lim, H.C.
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1412-1413
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    • 2006
  • In this research, an organic thin 13 passivation layer was newly adopted to prefect the organic layer from ambient moisture and oxygen. As the organic thin film passivation layer, poly methyl methacrylate thin films (ppMMA) were deposited using a plasma polymerization technique. In order to their passivation performance for OLEDs, water vapor transmission rate (WVTR) of the ppMMAs were analyzed and luminance-current-voltage (L-I-V)/luminance-time (L-T) characteristics of the OLEDs with and without ppMMA passivation layer were investigated. The OLEDs had a structure of ITO/TPD (HTL)/Alq3(EML&ETL)/Al. The OLED with ppMMA passivation layer showed improved L-T performance than that of without ppMMA passivation layer.

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Behavior Analysis of Ultra-Thin Whitetopping in Field (얇은 콘크리트 덧씌우기 포장의 거동 평가)

  • Kang, Jang-Hwan;Jang, Jin-Yen;Koo, Han-Mo;Cho, Yoon-Ho
    • International Journal of Highway Engineering
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    • v.6 no.1 s.19
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    • pp.25-36
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    • 2004
  • The total length of paved roads in Korea is 67,265 Km, and among these roads, about 40% of the national highways and 98% of local roads are paved with asphalt concrete. The major distress to asphalt pavement is rutting and fatigue crack. The permanent deformation including rutting accounts for about 75% of this distress. UTW(Ultra-Thin Whitetopping), which is known for its high-quality performance in asphalt pavement with rutting and cracking, seems to reduce maintenance costs significantly if it is used as the maintenance/repair method for domestic asphalt pavement. In the research, static load test was conducted to establish a behavior of Whitetopping under traffic and environmental condition. It showed that the effect of the thickness of the concrete layer and the temperature change was significant. In addition, the tensile strain as the wheel load position was close to interior and edge of concrete slab were increased up to 75% of maximum tensile strain. It showed that joint spacing must be considered in UTW design procedure.

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The effect of initial Pd catalyst oxidation stale on CH$_4$sensitivity of SnO$_2$thin film sensor (Pd 촉매의 부분 산화 조절을 이용한 SnO$_2$박막 센서의 CH$_4$감도 변화 연구)

  • Choi, W. K.;Cho, J.;Cho, J. S.;Song, J. H.;Jung, H. J.;Koh, S. K.
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.2
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    • pp.45-49
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    • 1999
  • A flammable gas sensor based on the $SnO_2$thin film deposited by the reactive ion assisted deposition was fabricated and ultra-thin Pd layer as catalyst was adsorbed at surface by ion beam sputtering. The initial oxidation states of Pd catalyst were controlled to investigate the role of Pd in the sensing process of inflammale gas sensor through annealing in air and vacuum respectively. The Pd catalyst existing in pure metallic state showed the sensitivity higher than that of PdO. The result might be closely related to the fact that PdO as a surface acceptor would receive electrons via Pd sub-channel from $SnO_2$, and thus which reduces the sensitivity and delay the response time.

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Enhanced Electrochromic Switching Performance in Nickel Hydroxide Thin Film by Ultra-Thin Ni Metal (니켈금속 박막에서 수산화 니켈 박막의 전기변색속도 개선)

  • Kim, Woo-Seong;Seong, Jeong-Sub
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.163-167
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    • 2002
  • Improved optical switching property of electrochromic nickel hydroxide/nickel glass thin film is reported. Nickel metal film was deposited on glass by e-beam evaporation before following electrochemical redox cycling to form nickel hydroxide for electrochromic activation. Without ITO (indium tin oxide) layer as electrical conductor, this electrode showed more rapid coloration rate than nickel hydroxide film on ITO substrate in the change of the electric voltage and optical transmittance. XPS analysis confirmed the existence of ultra-thin nickel metal layer (${\sim}10{\AA}$) between electrochemically grown nickel hydroxide and the glass substrate. It is concluded that the remained nickel metal nano-layer attribute to the conduction layer and the enhanced response time.

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Layer-by-layer Deposition of BSCCO Thin Films Using Ion Beam Sputtering Method (이온 빔 스퍼터법에 의한 BSCCO 박막의 순차 증착)

  • 박용필;이준웅
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.334-339
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    • 1998
  • $Bi_2Sr_2CuO_x$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of $5.0\times10^{-5}$ Torr is supplied with ultraviolent light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

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Characteristics of Ta2O5 thin film prepared by RTMOCVD (RTMOCVD법에 의해 제조된 Ta2O5 박막의 특성)

  • So, Myoung-Gi;Kwong, Dim Lee
    • Journal of Industrial Technology
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    • v.19
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    • pp.101-105
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    • 1999
  • Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

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Avalanche Phenomenon at The Ultra Shallow $N^+$-P Silicon Junctions (극히 얕은 $N^+$-P 실리콘 접합에서의 어발런치 현상)

  • Lee, Jung-Yong
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.3
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    • pp.47-53
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    • 2007
  • Ultra thin Si p-n junctions shallower than $300{\AA}$ were fabricated and biased to the avalanche regime. The ultra thin junctions were fabricated to be parallel to the surface and exposed to the surface without $SiO_2$ layer. Those junctions emitted white light and electrons when junctions were biased in the avalanche breakdown regime. Therefore, we could observe the avalanche breakdown region visually. We could also observe the influence of electric field to the current flow visually by observing the white light which correspond to the avalanche breakdown region. Arrayed diodes emit light and electrons uniformly at the diode area. But, the reverse leakage current were larger than those of ordinary diodes, and the breakdown voltage were less than 10V.

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TOF-MEIS System을 이용한 Ultra Thin Film 및 Composition and the Core/Shell Structure of Quantum Dot 분석

  • Jeong, Gang-Won;Kim, Jae-Yeong;Mun, Dae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.284-284
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    • 2013
  • 중 에너지 이온 산란 분석법(Medium Energy Ion Scattering Spectrometer, MEIS)은 50~500 keV로 이온을 가속 후 시료에 입사시켜 시료의 원자와 핵간 충돌로 산란되는 일차이온의 에너지를 측정하여 시료를 분석하는 기법으로, 원자층의 깊이 분해능으로 초박막의 표면 계면의 조성과 구조를 분석 할수 있는 유용한 미세 분석기술이다. 본 실험에서 에너지 70~100 keV의 He+ 이온을 사용하여 Pulse Width 1 ns의 Pulsed ion beam을 만들어 Start 신호로 사용하고 Delay-line-detector에 검출된 신호를 End 신호를 이용한 TOF-MEIS System을 개발하였다. 활용 가능한 분석시편으로 Ultra thin film 시편으로 1, 1.5, 2, 2.5, 3, 4 nm의 HfO2, 1.8, 4nm의 SiO2 시편을 분석 하였으며 Ultra Shallow Junction 시편으로 As Doped Si, Cs Doped Si 시편 및 Composition, Core/shell 구조의 Q-dot 시편으로 CdSe, CdSe/ZnS등 다양한 분석 실험을 진행 하였다. Composition, Core/shell 구조의 Q-dot 시편은 Diamond Like Carbon(DLC)의 Substrate에 Mono-layer로 형성하여 분석하였다.

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