• 한국표면공학회지
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• 제23권4호
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• pp.230-236
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• 1990

• 진공이야기
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• 제1권3호
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• pp.14-20
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• 2014

Lithography is widely recognized as one of the key steps in the manufacture of ICs and other devices and/or structures. However, as the dimensions of features made using lithography become smaller, lithography is becoming a more critical factor for enabling miniature IC or other devices and/or structures to be manufactured. As explained above, to make it happen, many other important technologies will have to be addressed. The vacuum technology is one of them and the engineers and experts are paying attention on vacuum technology including vacuum pumps. Especially high Vacuum(HV) and Ultra high vacuum(UHV) are not easy and not simple one. So the manpower who can understand vacuum technology with long experience in vacuum industry is important with basic study.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
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• pp.223-228
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• 2004

Miniaturization is the central theme in modern fabrication technology. Many of the components used in modern products are becoming smaller and smaller. The direct write FIB technology has several advantages over contemporary micromachining technology, including better feature resolution with low lateral scattering and capability of maskless fabrication. Therefore, the application of FIB technology in micro fabrication has become increasingly popular. In recent model of FIB, however the feeding system has been a very coarse resolution of about a few $\mu\;\textrm{m}$. It is not unsuitable to the sputtering and the deposition to make the high-precision structure in micro or macro scale. Our research is the development of nano stage of 200mm strokes and 10nm resolutions. Also, this stage should be effectively operating in ultra high vacuum of about $1\times10^{-7}$ torr. This paper presents the concept of nano stages and the discussion of the material treatment for ultra high vacuum.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.235-235
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• 2012

We investigated the energy levels of valence region at the planar junction of poly (3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) using ultraviolet photoemission spectroscopy (UPS) with ultra high vacuum. These are the most widely used materials for bulk heterojunction (BHJ) organic solar cells due to their high efficiency. In order to make the planar junction, we carried out the electrospray vacuum deposition (EVD) of PCBM onto spin-coated P3HT in high vacuum conditions (${\sim}10^{-5}-10^{-6}$). The planar junction interface exhibited 0.71 eV for the offset between P3HT HOMO and PCBM LUMO, which is different from the gap (0.85 eV) of individual values and is closer to the open circuit voltage of solar cells fabricated with the same material combination.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.237.2-237.2
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• 2016

A pure hafnium-carbide (HfC) coating layer was deposited onto carbon/carbon (C.C) composites using a vacuum plasma spray system. By adopting a SiC buffer layer, we successfully integrated C.C composites with a $100-{\mu}m-thick$ protective coating layer of HfC. Compared to the conventional chemical vapor deposition process, the HfC coating process by VPS showed increased growth rate, thickness, and hardness. The growth behavior and morphology of HfC coatings were investigated by FE-SEM, EDX, and XRD. From these results, it was shown that the addition of a SiC intermediate layer provided optimal surface conditions during the VPS procedure to enhance adhesion between C.C and HfC (without delamination). The thermal ablation test results shows that the HfC coating layer perfectly protected inner C.C layer from thermal ablation and oxidation. Consequently, we expect that this ultra-high temperature ceramic coating method, and the subsequent microstructure that it creates, can be widely applied to improve the thermal shock and oxidation resistance of materials under ultra-high temperature environments.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.108-115
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• 2016

Even if ion pumps are widely and mostly used in ultra-high vacuum (UHV) conditions, virtually every existing ion pump has its maximum pumping speed around 1E-6 mbar (1E-4 Pa). Discharge intensity in the ion pump Penning cell is defined as the current divided by pressure (I/P). This quantity reflects the rate of cathode bombardment by ions, which underlies all of the various pumping mechanisms that occur in ion pumps (chemisorption on sputtered material, ion burial, etc.), and therefore is an indication of pumping speed. A study has been performed to evaluate the influence of magnetic fields and cell dimensions on the ion pump discharge intensity and consequently on the pumping speed at different pressures. As a result, a combination of parameters has been developed in order to design and build an ion pump with the pumping speed peak shifted towards lower pressures. Experimental results with several different test set-ups are presented and a prototype of a new 200 l/s ion pump with the maximum pumping speed in the 1E-8 mbar (1E-6 Pa) is described. A model of the system has also been developed to provide a framework for understanding the experimental observations.

• Tribology and Lubricants
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• 제10권3호
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• pp.18-28
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• 1994

Sliding friction between a spherical pin of 8mm in diameter and flat (disk) substrates coated with vacuum-deposited thin film was measured under ultra high vacuum pressure for various materials, various rates of film supply (8~210 nm/min), various sliding velocities (1.5~67.0 mm/s). It was found that the most effective lubrication was obtained when the adhesion between $Si_3N_4$ pin and SUS440C disk was high and that between $Si_3N_4$ pin and $Si_3N_4$ disk was low. When In film was used as a lubricant between $Si_3N_4$ pin and stainless steel disk, the friction coefficient had a value as low as 0.04. In this case, the normal load W and the sliding speed V were expressed as 10N and 24 mm/s for $10^{-6}Pa$. The dependence of $\mu$ on the thickness h of the Ag film, which was used as a lubricant between $Si_3N_4$ pin and SUS440C (Q) disk was expressed as $\mu$=0.12 for W=10N and V=24mm/s when the film was thicker than 100nm. A brief discussion on these relations is presented from the viewpoint of the real contact area.

• Journal of Korean Vacuum Science & Technology
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• 제7권2호
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• pp.45-56
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• 2003

A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.