• Korean Journal of Environment and Ecology
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• v.28 no.1
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• pp.33-44
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• 2014

The purpose of this study was to provide basic information and investigate a vegetation structure around Tohamsan (Mt.) Wetland. Actual vegetation map was made on the basis of watershed around that. Vegetation structure survey was carried out for 8 representative communities of actual vegetation which were Pinus densifrora community, Quercus variabilis community, Cornus controversa community, Q. serrata community, Q. mongolica-Q. serrata community, Salix koreensis community, Q. mongolica community, Q. variabilis-Q. mongolica-Q. serrata community. Tohamsan (Mt.) Wetland is located on 490m above sea level and the area of watershed was $236,272m^2$. Vegetation type were divided into 16 types, and the ratio of Q. mongolica community was 33.1% ($78,209.2m^2$). In order to turn out the structure of 8 representative communties, 32 plots were set up and unit area of plot was $100m^2$. The estimated age of forest is 30~50-years-old, and in the resutls of soil analysis, acidity was pH 4.89 and organic matter was 4.46%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of the Mineralogical Society of Korea
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• v.21 no.2
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• pp.183-192
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• 2008

Stone cultural heritages in Korea are mostly situated out door without any notable protection thus there are severe damage from chemical and biological weathering. This in turn, causes deformation and structural damage. To counter act this problem and to increase durability, various kinds of conservation materials are used in the conservation and restoration treatment. However, there are not many practical and technological experiment done on this subject. This paper attempts quantitative evaluation of effectiveness of ethylsilicate based resin for Namsan granite in Gyeongju. When two different materials with different ethylsilicate concentration were compared, the result indicated decrease of absorption and porosity with increase of ultrasonic velocities, uniaxial compressive strength, elastic constant, tensile strength and Poisson's ratio. In addition, comparison of physical characteristic of the conservation material resulted favorably toward ones with higher concentration of ethylsilicate. This is due to the ethylsilicates characteristic to fill the internal pores of stone. There is discolouration of stone surface after treatment with conservation material. This was more prominent with the product of higher ethylsilicate concentration.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Journal of the Korean Institute of Rural Architecture
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• v.14 no.4
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• pp.107-116
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• 2012

This study aims to investigate what degree do the hospital buildings carry out their role in regional scenery. To carry out this study the existing theoretical and field survey was conducted to the 44 private hospitals in small and medium-sized cities - Jeonju city, Kunsan city and Iksan city in Jeonlabukdo district. The contents of the survey are the general aspect of the polled, the image of the buildings, that of medical treatment parts, the relations to the regional scenery. And they are questionnaire surveyed to the 44 private hospital buildings. In questionnaire survey, the 35 professional architects who major architecture and related design and 118 citizens who doesn't major architecture are participated. The results of this study are as follows: 1. Those surveyed who answered those private hospital buildings which have their functional images are barely 20%. Some of 27% answered they have images of the commercial building. Especially in professional architects, 5% of them answered thet have their hospital images. It showed that they don't have their identity in the architectural expression in the processof architectural design. 2. The architectural facade elements that express their images in surveyed buildings are answered that architectural building form is 62%, architectural color is 27% and architectural material is 10% in turn. And the architectural elements that express their images in surveyed buildings are answered that building wall is 56%, architectural decoration is 32%. In this article, the reason why the ratio of the architectural decoration is high is that they don' have their identity in building itself. And they expressed their identity by their decoration, sign system not their buildings. 3. As the preference level for their images, some of the 49% of the total surveyed answered common. The general surveyed answered a little preference. But the architect professional group answered preference is 14%, not preference is 29%. The reason of this article is that the general surveyed are familiar with their buildings. So the questionnaire of the harmony with the surrounding scenery, 25% of the general surveyed answered that they are in harmony with surrounding but 22% of them answered that they are not in them. But In professional group, they answered 6% oh them are positive 37% of them are negative. This results suggests that the identity of the private hospital buildings are established in the process of archiectural design.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.38 no.3
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• pp.234-240
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• 2002

The static stability of the otter board in relation to the angle of attack ($\alpha$) was studied analytically and experimentally from the moments of tensions and hydrodynamic force acting on it. Three flat plates of 0.5, 1.0, and 1.5 aspect ratios (λ) and four cambered plates of 5, 10, 15, and 20% camber ratios (CR) with the same aspect ratio (λ=1.5) were tested in a circulating water tank for measuring the hydrodynamic forces and moments relevant to the position of hydrodynamic center. And, center-of-pressure coefficients ($C_p$) and moment coefficients ($C_M$) of each plate as a function of the angle of attack were calculated for estimating the static stability from hydrodynamic forces. The obtained results are summarized as follows ； 1． When the angle of attack for otter board is changed from equilibrium for some reason, moments depending upon tensions of warp and sweep line always act in order to have the static stability, respectively. 2. Position of center-of-pressure of each flat plate moves from leading edge to center of plate with the increase of the angle of attack. It means that the moment of hydrodynamic force acting on flat plates also increases the static stability of plate. 3. With the increase of the angle of attack for cambered plates, the positions of center of-pressure move from trailing to leading edge, and then turn toward center of plate. As the camber ratios increase, the ranges of the angle of attack of the static un stability depending on moment of hydrodynamic force become wide.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.31 no.5
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• pp.343-353
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• 2013

Recently, the landscape change by development has become more important and it's been stipulated that environmental effects evaluation must include LIA which reflects the said issue. Even though the selection of viewpoints which have the biggest impact on LIA result is stipulated in accordance with related rules, the criteria are inconsistent. Therefore, LIA experts' or project developers' subjective opinions have been very influential. In this case, wrong viewpoints which do not meet the selection criteria could be selected based on a discretionary interpretation on them, which could in turn substantially reduce an accuracy and reliability of the LIA results. Therefore, this research suggested the reverse-viewshed frequency technique as method that can be verified accuracy and reliability of viewpoints. And it has comparatively analyzed effective viewpoints using reverse-viewshed frequency analysis on viewpoints which were selected for LIA. As a result, the average validity was just 58% of total viewpoints used in construction sites. And the validity of viewpoints decreased as viewshed frequency increased. Based on results above, it was able to verify that the unreasonable points of a substantial proportion have been used as viewpoints in LIA process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.11
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• pp.683-689
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• 2017

Given that the ratio of adolescents among North Korean refugees is increasing, it is the right time to study the present situation of juvenile North Korean defectors. North Korean adolescents tend to find themselves in an uncomfortable situation as they experience unfamiliar lives in South Korea, and act passively in various situations. A proper resolution of such problems in this situation will help them adapt smoothly to South Korean society. This study investigates the relationship between social support, self-esteem, and problem-solving abilities of North Korean adolescent refugees based on a survey on 213 North Korean teens which was performed for 24 days beginning on June 14 2017. The study results show that emotional, material, informational, and evaluative support for North Korean adolescent defectors, which is a type of social support, had a positive effect on their self-esteem, and self-esteem in turn had a positive effect on their problem solving ability. In addition, self-esteem had a mediating effect on the relationship between the four types of social support and problem solving ability of North Korean adolescent defectors. This study suggested a practical plan to improve the problem solving ability of North Korean adolescent defectors for their smooth adaptation to South Korean society, through social support and improved self-esteem of North Korean adolescents, such as program development or self - development training.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.511-516
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• 2002

Hexagonal $YMnO_3$ thin films were prepared from $Y(NO_3)_3{\cdot}5H_2O$ and $Mn(CH_3CO_2)_2{\cdot}4H_2O$ as starting materials on the Si(100) substrates by the sol-gel method. The crystal structure and the electrical properties of the $YMnO_3$ thin films were investigated as a function of heat treatment temperature, the amount of water(Rw) of hydrolysis and the addition of catalysis. The crystallization of the $YMnO_3$ thin film began at 700${\circ}C$ and completed at 800${\circ}C$ for 1 h. The c-axis (0001) preferred orientation of hexagonal $YMnO_3$ was detected for the $YMnO_3$ thin films with Rw=6 and that was decreased for the $YMnO_3$ thin films with Rw=1 and Rw=12. The crystallinity and preferred orientation of the $YMnO_3$ thin films were depended on the addition of acid and/or alkali catalysis, which, in turn, the preferred orientation of c-axis was decreased and the orthorhombic phase of $YMnO_3$ was detected to the specimens with the addition of catalysis. The $YMnO_3$ thin film with Rw=6 showed good leakage current density of $1.2{\times}10-8 A/cm^2$ at the applied voltage of 0.2V and the leakage current density was not changed drastically with applied voltage.