• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• Asian Journal of Atmospheric Environment
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• 제9권1호
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• pp.22-30
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• 2015

This study evaluated road shape and roadside barrier impact on near-road air pollution dispersion using FLUENT computational fluid dynamics (CFD) model. Simulated road shapes are three types, namely at-grade, depressed, and filled road. The realizable k-${\varepsilon}$ model in FLUENT CFD code was used to simulate the flow and dispersion around road. The selected concentration profile results were compared with the wind tunnel experiments. The overall concentration profile results show good agreement with the wind tunnel results. The results showed that noise barriers, which positioned around the at-grade road, decrease the horizontal impact distance (In this study, the impact distance was defined as the distance from road surface origin coordinate to the position whose mass fraction is 0.1.) lower 0.33~0.65 times and change the vertical air pollution impact distance larger 2.0~2.27 times than those of no barrier case. In case of filled road, noise barriers decrease the horizontal impact distance lower 0.24~0.65 times and change the vertical air pollution impact distance larger 3.33~3.55 times than those of no barrier case. The depressed road increase 1.53~1.68 times the vertical air pollution impact distance. It contributes the decrease of horizontal air pollution impact distance 0.32~0.60 times compare with no barrier case.

• Wind and Structures
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• 제38권6호
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• pp.411-425
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• 2024

To investigate the optimal aerodynamic parameters of wind barriers for the T-beam of high-speed railway (HSR) bridge and the wind field of the wind barrier-train-bridge system, the three-component forces of the system and the wind pressure on the vehicle surface were tested and analyzed through the sectional model wind test. The effects of wind velocity, with/without wind barrier, the height of wind barrier, and the air permeability of the wind barrier on the aerodynamic characteristics of the train-bridge system are discussed. Additionally, a CFD numerical model is constructed to evaluate the wind environment of the bridge surface with/without the wind barrier, and the impact of wind barrier on the running safety of vehicles are analyzed. Comprehensively considering the running safety of the train and the wind-resistant stability of the bridge, it is more appropriate to set the wind barrier height H as 3.5 m and the porosity 𝛽 as 30% respectively.

• Journal of Magnetics
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• 제11권1호
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• pp.25-29
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• 2006

Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.106-107
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• 2005

• Wind and Structures
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• 제34권3호
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• pp.275-290
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• 2022

Mobile sand barriers are a new type sand-retaining structure that can be moved and arranged according to the engineering demands of sand control. When only used for sand trapping, mobile sand barriers could be arranged in single row. For the dual purposes of sand trapping and sand stabilization, four rows of mobile sand barriers can be arranged in a staggered form. To reveal the effect of plane layout, the included angle between sand barrier direction and wind direction on the characteristics of flow fields and the sand control laws of mobile sand barriers, numerical computations and wind tunnel tests were conducted. The results showed that inflows deflected after passing through staggered arrangement sand barriers due to changes in included angle, and the sand barrier combination exerted successive wind resistance and group blocking effects. An analysis of wind resistance efficiency revealed that the effective protection length of staggered arrangement sand barriers approximately ranged from the sand barrier to 10H on the leeward side (H is sand barrier height), and that the effective protection length of single row sand barriers roughly ranged from 1H on the windward side to 20H on the leeward side. The distribution of sand deposit indicated that the sand interception increased with increasing included angle in staggered arrangement. The wind-breaking and sand-trapping effects were optimal when included angle between sand barrier direction and wind direction is 60°-90°.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.134-135
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• 2008

Ultra-thin $SiO_2/ZrO_2$ dielectrics were deposited by atomic layer chemical vapor deposition (ALCVD) method for non-volatile memory application. Metal-oxide-semiconductor (MOS) capacitors were fabricated by stacking ultra-thin $SiO_2$ and $ZrO_2$ dielectrics. It is found that the tunneling current through the stacked dielectric at the high voltage is lager than that through the conventional silicon oxide barrier. On the other hand, the tunneling leakage current at low voltages is suppressed. Therefore, the use of ultra-thin $SiO_2/ZrO_2$ dielectrics as a tunneling barrier is promising for the future high integrated non-volatile memory.

• Journal of Magnetics
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• 제15권4호
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• pp.185-189
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• 2010

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

• Journal of Magnetics
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• 제9권1호
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• pp.17-22
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• 2004

We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{\times}A) of 3 {\times} 10^4 and 6 {\times} 10^3 {\Omega}{\mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{\times}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{\AA} /Cu 200 {\AA}/Ta 50 {\AA}/Ni_{76}Fe_{24} 20 {\AA}/Cu 50 {\AA}/Mn_{75}Ir_{25} 100 {\AA}/Co_{71}Fe_{29} 40 {\AA}/Al-O$ junction with $d_{Al}= 8 {\AA} and P_{O2}{\times}t_{0X}/ = 8.4 {\times} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.263.2-263.2
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• 2007