• International journal of advanced smart convergence
• /
• v.8 no.4
• /
• pp.161-168
• /
• 2019

Traffic accidents in tunnel can lead to large traffic accidents due to narrow and dark road characteristics. Therefore, special care of the driver is required when is driving in a tunnel. However, accidents can happen at any time. In the event of an accident, a narrow road structure may lead to a second accident. Therefore, all facilities installed inside the tunnel should be allowed to minimize damage in the event of an accident. We confirmed the safety of the collision target through the action of the sedan, Sport Utility Vehicle (SUV) and truck when the vehicle crashed into a stairway installed on the tunnel emergency escape route, and when a concrete barrier or guard rail was installed in front of the stairway. The behavior of the vehicle has resulted in a total of three results: rollover or rollover, change of speed and angle of the vehicle after collision. The sedan and SUV were the most secure when colliding with the guardrail, but considering the truck as a whole, concrete barriers were judged to be the most suitable for minimizing damage from the first accident and reducing the risk of the second accident.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.133-133
• /
• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).

• Journal of Magnetics
• /
• v.10 no.4
• /
• pp.137-141
• /
• 2005

We confirmed that the improvement in properties of magnetic tunnel junctions prepared by radical oxidation after thermal treatment was mostly resulted from the redistribution of oxygen at the $AIOx/Co_{90}Fe_{10}$ interface. The as-deposited Al oxide barrier was oxygen-deficient but most of it re-oxidized into $Al_2O_3$, the thermodynamically stable stoichiometric phase, through thermal treatment. As a result, the effective barrier height was increased from 1.52 eV to 2.27 eV. On the other hand, the effective barrier width was decreased from 8.2 ${\AA}$ to 7.5 ${\AA}$. X-ray absorption spectra of Fe and Co clearly showed that the oxygen in the CoFe layer diffused back into the Al barrier and thereby enriched the barrier to close to a stoichiometirc $Al_2O_3$ phase. The oxygen bonded with Co and Fe diffused back by 6.8 ${\AA}$ and 4.5 ${\AA}$ after thermal treatment, respectively. Our results confirm that controlling the chemical structures of the interface is important to improve the properties of magnetic tunnel junctions.

• Korean Journal of Materials Research
• /
• v.13 no.4
• /
• pp.233-238
• /
• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.255-255
• /
• 2010

전하 트랩형 비휘발성 메모리는 10년 이상의 데이터 보존 능력과 빠른 쓰기/지우기 속도가 요구 된다. 그러나 두 가지 특성은 터널 산화막의 두께에 따라 서로 trade off 관계를 갖는다. 즉, 두 가지 특성을 모두 만족 시키면서 scaling down 하기는 매우 힘들다. 이것의 해결책으로 적층된 유전막을 터널 산화막으로 사용하여 쓰기/지우기 속도와 데이터 보존 특성을 만족하는 Tunnel Barrier engineered Memory (TBM)이 있다. TBM은 가운데 장벽은 높고 기판과 전극쪽의 장벽이 낮은 crested barrier type이 있으며, 이와 반대로 가운데 장벽은 낮고 기판과 전극쪽의 장벽이 높은 VARIOT barrier type이 있다. 일반적으로 유전율과 밴드갭(band gap)의 관계는 유전율이 클수록 밴드갭이 작은 특성을 갖는다. 이러한 관계로 인해 일반적으로 crested type의 터널 산화막층은 high-k/low-k/high-k의 물질로 적층되며, VARIOT type은 low-k/high-k/low-k의 물질로 적층된다. 이 형태는 밴드갭이 다른 물질을 적층했을 때 전계에 따라 터널 장벽의 변화가 민감하여 전자의 장벽 투과율이 매우 빠르게 변화하는 특징을 갖는다. 결국 전계에 민감도 향상으로 쓰기/지우기 속도가 향상되며 적층된 유전막의 물리적 두께의 증가로 인해 데이터 보존 특성 또한 향상되는 장점을 갖는다. 본 연구에서는 기존의 TBM과 다른 형태의 staggered tunnel barrier를 제안한다. staggered tunnel barrier는 heterostructure의 에너지 밴드 구조 중 하나로 밴드 line up은 두 밴드들이 같은 방향으로 shift된 형태이다. 즉, 가전자대 에너지 장벽의 minimum이 한 쪽에 생기면 전도대 에너지 장벽의 maximum은 반대쪽에 생기는 형태를 갖는다. 이러한 밴드구조를 갖는 물질을 터널 산화막층으로 하게 되면 쓰기/지우기 속도를 증가시킬 수 있으며, 데이터 보존 능력 모두 만족할 수 있어 TBM의 터널 산화막으로의 사용이 기대된다. 본 연구에서 제작한 staggered TBM소자의 터널 산화막으로는 $Si_3N_4$/HfAlO (Hf:Al=1:3)을 사용하여 I-V(current-voltage), Retention, Endurance를 측정하여 메모리 소자로서의 특성을 분석하였으며, 터널 산화막의 제 1층인 $Si_3N_4$의 두께를 1.5 nm, 3 nm일 때의 특성을 비교 분석하였다.

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.13 no.4
• /
• pp.291-304
• /
• 2011

Recently concern for subsea tunnels is increasing, The effect of high water pressure can not be ignored in the case of a deep subsea tunnel. Reinforcement like grouting is necessary for the stability of such a subsea tunnel. In this study, therefore, it was investigated how the water barrier and shear strength increment resulted from grouting had an effect on the stability of a subsea tunnel. To this end, two-dimensional hydromechanical coupled analyses were performed for a sensitivity analysis in terms of different range, permeability coefficient, and cohesion of grouting reinforcement for the rock classes I, III, and V with respect to RMR system. The mutual relationship between strength increment and water pressure increased by barrier effect due to grouting was investigated by analyzing the numerical results.

• Wind and Structures
• /
• v.23 no.3
• /
• pp.171-189
• /
• 2016

An adjustable, louver-type wind barrier was introduced in this study for improving the running safety and ride comfort of train on the bridge under the undesirable wind environment. The aerodynamic characteristics of both train and bridge due to this novel wind barrier was systematically investigated based on the wind tunnel tests. It is suggested that rotation angles of the adjustable blade of the louver-type wind barrier should be controlled within $90^{\circ}$ to achieve an effective solution in terms of the overall aerodynamic performance of the train. Compared to the traditional grid-type wind barrier, the louver-type wind barrier generally presents better aerodynamic performance. Specifically, the larger decrease of the lift force and overturn moment of the train and the smaller increase of the drag force and torsional moment of the bridge resulting from the louver-type wind barrier were highlighted. Finally, the computational fluid dynamics (CFD) technique was applied to explore the underlying mechanism of aerodynamic control using the proposed wind barrier.

• Journal of the Korean Magnetics Society
• /
• v.13 no.2
• /
• pp.47-52
• /
• 2003

Ferromagnetic tunnel junctions were fabricated by dc magnetron sputtering and plasma oxidation process. The local transport properties of the ferromagnetic tunnel junctions were studied using contact-mode Atomic Force Microscopy (AFM) and the local current-voltage analysis. Tunnel junctions with the structure of sub./Ta/Cu/Ta/NiFe/Cu/Mn$\_$75/Ir$\_$25//Co$\_$70/Fe$\_$30//Al-oxide were prepared on thermally oxidized Si wafers. Al-oxide layers were formed with microwave excited plasma using radial line slot antenna (RLSA) for 5 and 7 sec. Kr gas was used as the inert gas mixed with $O_2$ gas for the plasma oxidization. No correlation between topography and current image was observed while they were measured simultaneously. The local current distribution was well identified with the distribution of local barrier height. Assuming the gaussian distribution of the local barrier height, the ferromagnetic tunnel junction with longer oxidation time was well fitted with the experimental results. As contrast, in the case of the shorter time oxidation junction, the current mainly flow through the low barrier height area for its insufficient oxygen. Such leakage current might result in the decrease of tunnel magnetoresistance (TMR) ratio.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.255-255
• /
• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• International Journal of Highway Engineering
• /
• v.10 no.4
• /
• pp.235-245
• /
• 2008

Since rapidly increase of tunnel with increasing of expressway, the study on safety improvement of safety device at entrance of expressway tunnels is necessary. The existence of tunnel occurs more speed reduction than an upward slope by itself, the collision accident of tunnel entrance causes heavier damage than that of general accident on the road. So, many kinds of safety devices such as poly-ethylene barrier, guard-rail are placed on the road side. But these devices affect the drivers as an obstacle. Although there are various safety devices that are placed at tunnel entrance, this study is related to following 2-cases. One is that the poly-ethylene barrier is placed and the other is that a safety devices is not placed. The reason that these two cases are selected, is that poly-ethylene barrier is usually placed at many tunnel entrances and safety devices can affect the drivers as an obstacle. This study is related to the difference of right-hand side clearance between inside tunnel and outside tunnel, too. The average difference observed car speed and VDS(vehicle detect system) speed nearby the tunnel is analysed. Through the statistical analysis of the average difference, this study suggests an alternatives on safety improvement of safety devices at entrance of expressway tunnels. It is concluded that the small difference of right-hand side clearance is desirable to drivers when a poly-ethylene barrier is placed. And when the difference of right-hand side clearance is large, no safety devices is desirable, and when the difference of right-hand side clearance is small, poly-ethylene barrier should be placed to improve safety.