• Title/Summary/Keyword: tungsten-bronze type

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The study on preparation of $Sr_xBa_{1-x}$ $Nb_2O_6$ piezoelectric Thin Film of tungsten-bronze type by Metal Organic Decomposition Process and their properties (MOD 공법을 이용한 텅스텐 브론즈구조의 $Sr_x Ba_{1-x}$ $Nb_2O_6$ 압전 박막의 제조 및 특성 연구)

  • Kim, Kwang-Sik;Kim, Kyoung-Won;Jang, Gun-Ik;Ur, Soon-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.248-249
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    • 2005
  • The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

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The dependent of growth temperature of piezoelectric SBN Thin Film by Metal Organic Decomposition Process and their properties (MOD 법에 의한 압전 SBN 박막의 성장 온도 의존성 및 특성)

  • Kim, Kwang-Sik;Jang, Gun-Ik;Ur, Soon-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.382-383
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    • 2006
  • The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150~200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400{\sim}800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding. average grain size about 500~1000 nm influenced by annealing temperature. The piezoelectric properties of prepared SBN thin film, the remanent polarization value(2Pr) and coercive field was $1.2{\mu}C/cm^2$ and 2.15V/cm, respectively.

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Sr/Ba Ratio Dependence of Dielectric Characteristics in Strontium Barium NiobateCeramics (Sr/Ba 비에 따른 Strontium Barium Niobate 세라믹스의 유전특성)

  • 김명섭;이준형;김정주;이희영;조상희
    • Journal of the Korean Ceramic Society
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    • v.38 no.12
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    • pp.1167-1173
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    • 2001
  • The tetragonal tungsten bronze type of Sr$_{x}Ba_{1-x}Nb_{2}O_{6}$(SBN) (0.3$\le$x$\ge$0.7) ceramics was synthesized by the solid state reaction method, and the dielectric properties of SBN ceramics as a function of Sr/Ba ratio were examined. With increasing Sr/Ba ratio in SBN ceramics, the Curie temperature decreased and the maximum dielectric constant at the Curie temperature increased. The relaxor behavior of the SBN ceramics as a function of Sr/Ba ratio was quantitatively evaluated. More relaxor behavior of dielectric characteristics was observed as the ratio of Sr/Ba increased. The experimental results are explained with a viewpoint of crystallography of tungsten bronze structured SBN ceramics.

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Formation Condition and Ferroelectric Properties of Niobate Tetragonal Tungsten Bronze (TTB) Type Ferroelectrics

  • Naoki Wakiya;Wang, Ju-Kai;Kazuo Shinozaki;Nobuyasu Mizutani
    • The Korean Journal of Ceramics
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    • v.6 no.4
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    • pp.380-384
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    • 2000
  • Crystal structure of $Ba_5-5X$Y$_10/3$Nb$_10$O$_30$ was tried to determine by Rietveld analysis using powder X-ray diffraction data. This compound has tetragonal tungsten bronze (TTB) structure with general formula, (Al)$_2$(A2)$_4$(B1)$_2$(B2)$_8$(O1)$_8$(O2)$_8$(O3)$_4$(O4)$_2$(O5)$_4$(O6)$_4$. However, it was difficult to determine the distribution of Ba and Y in Al and A2 sites by the analysis only. Combination of Rietveld analysis and site potentials calculation as well as lattice energy calculations helped to determine the distribution. As the result, it was clarified that $Ba^2+$ cations occupy A2 (pentagonal tunnel site) and $Y^3+$ cations occupy Al (cubic site). The distribution of cations at each site coincides with the distribution estimated by the difference of ionic radii. This supports the formation condition of TTB which was proposed in our previous report. $Ba_5-5X$Y$_10X/3$Nb$_10$O$_30$ shows ferroelectric characteristics. In this compound, remanent polarization decreases slightly with the composition X. On the other hand, the result of crystal structure determination reveals that atomic positions along c-axis for A1, A2, B1 and B2 cations are also decreased with the composition X. This would suggest that the dependence of remanent polarization on composition X is derived by the dependence of atomic coordinates on composition X.

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Phase Formation Behavior and Electrical Conduction Properties of Na0.6WO3 Thin Films Prepared by RF Sputtering Followed by Annealing (RF 스퍼터 증착과 후속 열처리에 의한 Na0.6WO3 박막의 상형성 거동과 전기전도 특성)

  • Lee, Seung-Hyun;Sun, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.8
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    • pp.510-515
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    • 2014
  • Thin films of cubic $Na_{0.6}WO_3$, which is one of the sodium tungsten bronze, were fabricated by rf sputtering for the electrode applications in integrated sensors and actuators. A single-phase cubic $Na_{0.6}WO_3$ sputtering target of power type was prepared by conventional solid-state reaction. Thin films were deposited from the powder target, and the as-deposited films were amorphous, thus they annealed by tube furnace or RTP for crystallization. Thin films having cubic phase $Na_xWO_3$ were fabricated by the optimization of sputtering and post-annealing conditions, but single-phase cubic $Na_{0.6}WO_3$ thin films were not obtained. Although the films were not in single phase, they had good electrical conduction properties showing electrical resistivities of $10-4{\Omega}{\cdot}cm$ order.

Crystallization and Electrical Properties of SBM Thin Films by IBSD Process (IBSD법에 의한 SBN60 강유전체 박막의 배향 및 전기적 특성)

  • Jeong, Seong-Won;Jang, Jae-Hoon;Lee, Hee-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.869-873
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    • 2004
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

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Analysis of the Crystal Structure and the Relation with the Temperature Coefficient au_\varepsilon$ in $BaORe_2O_3TiO_2$ (Re=La, Nd, Y) Microwave Dielectric Ceramics ($BaORe_2O_3TiO_2$ (Re=La, Nd, Y)계 고주파 유전체의 결정구조 분석 및 온도계수 au_\varepsilon$와의 관련성)

  • 김정석;강현주;심해섭;이창희;천채일
    • Journal of the Korean Ceramic Society
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    • v.36 no.2
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    • pp.136-144
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    • 1999
  • Crystal structures of tungsten-bronze type microwave dielectric ceramics, $BaOLa_2O_34TiO_2$ (BLT) and $BaO(Nd_{0.77}Y_{0.23})_4TiO_2$ (B(NY)T), were analysed using the Rietveld method. The most relibale refinement was obtained by refining the cation and anion positions from the x-ray and neutron diffraction data, respectively. The ambiguites inherent in the refined crystal structure by Mateeva et al. were resolved. The $BaORe_2O_34TiO_2$ structure consiste of $3\times2$ perovskite blocks and 4 pentagon-channels. The Ti-O6 octahedrons are distroted and tilted, which, consequently, induces the displacements of Ba and Re ions producing the superlattics (c$\approx$ 7.6 $\AA$). The B(NY)T showed more severely tilted Ti-O6 octahedrons. The relative dielectric constant $\varepsilon_{\gamma}$ and temperature coefficient $\tau_\varepsilon$ are 109.5 and-$180 ppm/^{\circ}C$ in BLT, 76 and $+40 ppm/^{\circ}C$ in B(NY)T, respectively. The small Re ions produced a positive $\tau_\varepsilon$. The relation between $\tau_\varepsilon$ and the octahedron tilting in complex perovskite is discussed for the tungsten bronze type structure.

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$(Na,Li)NbO_3-BaTiO_3$세라믹스의 유전 및 압전 특성

  • Seong, Geum-Hyeon;Lee, Yu-Hyeong;Ryu, Ju-Hyeon;Jeong, Yeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.77-77
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    • 2009
  • $Pb(Zr,Ti_O_3$계 세라믹스는 우수한 압전 특성으로 인하여 압전변압기 및 액츄에이터, 센서 등 많은 분야에 응용이 되어져 왔다. 그러나, 최근 들어 $1000^{\circ}C$에서 급속도로 많은 휘발을 하는 PbO는 환경 및 인체에 나쁜 영향을 미칠 뿐 아니라 사용 후의 처리도 어려워 선진국에서는 사용을 제한하거나 줄이고 있는 추세에 있다. 따라서, PbO를 포함하지 않은 무연 (Lead-free)계 압전 세라믹스에 대한 연구가 많은 관심을 끌고 있으며 앞으로는E 장래성 있는 하나의 이슈 분야가 될 것이다. 이러한 Pb-based System 세라믹스를 대체 할 재료로서 $(Bi_{1/2}Na_{1/2})TiO_3$나 Tungsten-Bronze type, $(K_{1/2}Na_{1/2})NbO_3$ 등이 주로 연구가 되고 있다. 특히, alkali niobate를 기초로 한 $(K_{1/2}Na_{1/2})NbO_3(NKN)$은 무연 압전 물질로서 많은 주목을 받고 있다. 그러나, NKN의 주요 성분인 K 의 높은 조해성 때문에 일반적인 고상방법으로는 고 밀도의 세라믹을 얻기 힘들뿐더러 낮은 상전이 온도 때문에 많은 응용에는 제약이 되고 있다. 이러한 세라믹의 단점을 보완하고자 Hot forging, RTGG, SPS 등 과 같이 특수한 소결방법을 사용하여 고밀도의 세라믹을 제작하지만 이 방법들은 제품 대량 생산에 있어 경제적으로나 복잡한 제조과정을 고려할 때 매우 비효율적이라고 판단된다. 그러므로 $BaTiO_3$, $LiTaO_3$, Mg, Ca등을 첨가 시켜 소결을 향상시키고 고밀도를 얻기 위해 많은 연구가 진행 중이다. 따라서 본 연구에서는 Pb-based계의 세라믹스를 대체할 우수한 특성의 세라믹스를 제작하고자 기존의 $(K_{1/2}Na_{1/2})NbO_3(NKN)$세라믹스에서 낮은 용융온도 때문에 소결하기 어려운 $KNbO_3$를 제거한 $NaNbO_3$$LiNbO_3$$BaTiO_3$를 추가한 $NaLiNbO_3-BaTiO_3$세라믹스에 $K_4CuNb_8O_{23}$(KCN)을 첨가함으로서 이에 따른 압전 및 유전 특성을 조사하였다.

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Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films (SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Jo, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.723-727
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

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Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films (SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Jo, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.85-88
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    • 2003
  • $Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

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