• Korean Journal of Crystallography
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• v.5 no.1
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• pp.39-50
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• 1994

Diamond thin films were deposited on silicon, molybdebum, titanum and tugsten substrates, and were chlwntnizen using scanning electron microscopy, X-ray diffraction analysis and Raman spectroscopy. From the result of experiment in various deposition periods, it was found that found that were nucleated and grown on interlayed carbide layers, which were formed on refractory metal substrates at the initial stage of.

• Agricultural and Biosystems Engineering
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• v.1 no.2
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• pp.106-110
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• 2000

An integrated on-line inspection system was constructed with seven cameras, half mirrors to split images. 720 nm and 970 nm band pass filters, illumination chamber having several tungsten-halogen lamps, one main computer, one color frame grabber, two 4-channel multiplexors, and flat plate conveyer, etc. A total of seven images, that is, one color image form the top of an apple and two B/W images from each side (top, right and left) could be captured and displayed on a computer monitor through the multiplexor. One of the two B/W images captured from each side is 720nm filtered image and the other is 970 nm. With this system an on-line grading software was developed to evaluate appearance quality. On-line test results with Fuji apples that were manually fed on the conveyer showed that grading accuracies of the color, defect and shape were 95.3%, 86% and 88.6%, respectively. Grading time was 0.35 second per apple on an average. Therefore, this on-line grading system could be used for inspection of the final products produced from an apple sorting system.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.260-264
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• 2014

We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.143-147
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• 2002

In this paper, we investigated the deposition condition of Bragg reflector formation that will be expected to play an important role in future FBAR device applications. The thin films were deposited using an RF/DC magnetron sputtering technique. The material characteristics such as deposition rates, grain structures and surface roughnesses of the deposited silicon dioxide (SiO$_2$) and tungsten (W) films were investigated for various deposition conditions. As a result, it was found that the deposition condition could significantly affect the material characteristics of the deposited films and also the optimization of the deposition process is essentially important to obtain the desirable Brags reflector structure consisted of high-quality in films.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.1-6
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• 2013

The effects of interlayer formation and thermal treatment on the field-emission properties of carbon nanotubes (CNTs) were investigated. The CNTs were prepared on tungsten (W) micro-tip substrates using the electrophoretic deposition (EPD) method. The interlayers, such as aluminum (Al) and hafnium (Hf) were coated on the W-tips prior to CNT deposition and after the deposition of CNTs all the species were thermally treated at $700^{\circ}C$ for 30 min. The field-emission properties of CNTs were significantly improved by thermal treatment. The threshold electric field for igniting the electron emission was decreased and the emission current was increased. The Raman spectroscopy results indicated that this was attributed mainly to the enhancement of CNTs by thermal treatment. Also, the CNTs deposited on the interlayers showed the remarkably improved results in the long-term emission stability, especially when they were thermally treated. The X-ray photoelectron spectroscopy (XPS) measurement confirmed that this was resulted from the formation of the additional cohesive forces between the CNTs and the underlying interlayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.471-474
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• 2000

A flat type microgas sensor was fabricated on the p-type silicon wafer with low stress S $i_3$ $N_4$, whose thickness is 2${\mu}{\textrm}{m}$ using MEMS technology and its characteristics were investigated. W $O_3$thin film as a sensing material for detection of N $O_2$gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$~$600^{\circ}C$) for one hour. N $O_2$gas sensitivities were investigated for the W $O_3$thin films with different annealing temperatures. The highest sensitivity when operating at 20$0^{\circ}C$ was obtained for the samples annealed at $600^{\circ}C$. As the results of XRD analysis, the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibit higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}$ $R_{air}$ operating at 20$0^{\circ}C$ to 5 ppm N $O_2$of the sample annealed at $600^{\circ}C$ were approximately 90. 90.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.229-233
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• 2011

Diamond thin films were deposited on pretreated Co cemented tungsten carbide (WC-6%Co) inserts as substrate by microwave plasma chemical vapor deposition (MPCVD) system, equipped with a 915MHz, 30kW generator for generating a large-size plasma. The substrates were pretreated with two solutions Murakami solution $[KOH:K_3Fe(CN)_6:H_2O]$ and nitric solution $[HNO_3:H_2O]$ to etch, WC and Co at cemented carbide substrates, respectively. The deposition experiments were performed at an input power of 10 kW and in a total pressure of 100 torr. The influence of various $CH_4$ contents on the crystallinity and morphology of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The diamond film synthesized by the $CH_4$ plasma shows a triangle-faceted (111) diamond. As $CH_4$ contents was increased, the thickness of diamond films increased and the faceted planes disappeared. Finally, Faceted diamond changed into nano-crystalline diamond with random crystallinity.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.261-278
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• 2003

Concepts.Wafer-Level Chip-Scale Concept with Handling Substrate.Low Accuracy Placement Layout with Isolation Trench.Possible Pitch of Interconnections down to $10{\mu}{\textrm}{m}$ (Sn-Grains).Wafer-to-Wafer Equipment Adjustment Accuracy meets this Request of Alignment Accuracy (+/-1.5 ${\mu}{\textrm}{m}$).Adjustment Accuracy of High-Speed Chip-to-Wafer Placement Equipment starts to meet this request.Face-to-Face Modular / SLID with Flipped Device Orientation.interchip Via / SLID with Non-Flipped Orientation SLID Technology Features.Demonstration with Copper / Tin-Alloy (SLID) and W-InterChip Vias (ICV).Combination of reliable processes for advanced concept - Filling of vias with W as standard wafer process sequence.No plug filling on stack level necessary.Simultanious formation of electrical and mechanical connection.No need for underfiller: large area contacts replace underfiller.Cu / Sn SLID layers $\leq$ $10{\mu}{\textrm}{m}$ in total are possible Electrical Results.Measurements of Three Layer Stacks on Daisy Chains with 240 Elements.2.5 Ohms per Chain Element.Contribution of Soldering Metal only in the Range of Milliohms.Soldering Contact Resistance ($0.43\Omega$) dominated by Contact Resistance of Barrier and Seed Layer.Tungsten Pin Contribution in the Range of 1 Ohm

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2000.11c
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• pp.551-559
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• 2000

An integrated on-line inspection system was constructed with seven cameras, half mirrors to split images, 720 nm and 970 nm band pass filters, illumination chamber having several tungsten-halogen lamps, one main computer, one color frame grabber, two 4-channel multiplexors, and flat plate conveyer, etc., so that a total of seven images, that is, one color image from the top side of an apple and two B/W images from each side (top, right and left) could be captured and displayed on a computer monitor through the multiplexor. One of the two B/W images captured from each side is 720nm filter image and the other is 970nm. With this system an on-line grading software was developed to evaluate appearance quality. On-line test results to the Fuji apples that were manually fed on the conveyer showed that grading accuracies of the color, defective and shape were 95.3%, 86% and 91%, respectively. Grading time was 0.35 sec per apple on an average. Therefore, this on-line grading system could be used for inspection of the final products produced from an apple sorting system.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1871-1877
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• 2023

The main goal of the coordinated project development of therapeutic radiopharmaceuticals of Y-90 and Re-188 is to exploit advancements in radionuclide production technology. Here, direct and indirect production methods with medium reactor and cyclotron are compared to evaluate derived neutron flux and production yield. First, nano-sized ¹⁸⁶W and ⁸⁹Y specimens are suspended in water in a quartz vial by FLUKA simulation. Then, the solution is irradiated for 4 days under 9E+14 n/cm2/s neutron flux of reactor. Also, a neutron activator including three layers-lead moderator, graphite reflector, and polyethylene absorbent- is simulated and tungsten target is irradiated by 60 MeV protons of cyclotron to generate induced neutrons for ¹⁸⁸W and ⁹⁰Sr production via neutron capture. As the neutron energy reduced, the flux gradually increased towards epithermal range to satisfy (n/2n,γ) reactions. The obtained specific activities at saturation were higher than the reported experimental values because the accumulated epithermal flux and nano-sized specimens influence the outcomes. The beta emitters, which are widely utilized in brachytherapy, appeal an alternative route to locally achieve a rational yield. Therefore, the proposed method via neutron activator may ascertain these broad requirements.