• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1995.11a
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• pp.35-35
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• 1995

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1996.04a
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• pp.30-30
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• 1996

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

• Nuclear Engineering and Technology
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• v.56 no.10
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• pp.4103-4114
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• 2024

This research aimed to develop lead-free polymer composites based on poly-methyl methacrylate (PMMA) and embedded with tungsten carbide (WC) micro and nanoparticles for use in radiation protection applications. PMMA was filled with 20 %, 40 %, and 60 % by weight of WC micro- and nanoparticles. The shielding features of the proposed polymer mixtures were evaluated at different radioactive sources of different energies using the HPGe detector. The results revealed that the investigated composites containing micro and nano-structured WC particles showed superior radiation shielding at 81 keV due to the K-edge of the W element occurring at 69.5 keV. The findings also demonstrated that composites loaded with WC nanoparticles were more effective in shielding gamma radiation than those loaded with WC microparticles, even at the same filler wt.%. Furthermore, the sample containing 60 % by weight of nano-WC, coded as P-60nWC, had superior shielding performance than other polymer-based composites reported in the literature. Thus, the proposed nano-WC/PMMA composites can be effectively employed in radiation facilities as alternative environmentally and lead-free radiation shielding materials to protect people and the environment from the harmful risks of gamma radiation.

• Journal of Biomedical Engineering Research
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• v.19 no.4
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• pp.333-339
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• 1998

The effect of heat treatment conditions on the properties of tungsten(W) embolization coils has been evaluated. The W embolization coils were fabricated by coiling the primary W coil with a diameter of 30.mm on a alumina rod mandrel with a diameter of 2.92mm. The secondary coils were then heat treated at 475$^{\circ}C$and 600$^{\circ}C$ for various heat treatment time ranging from 5 minutes to 36hours. The pitch distance, diameter and shape retention capability of the W embolization coils were characterized after the heat treatment. The pitch distance of the W embolization coils increased with the heat treatment time. The diameter of W emboliazation coils decreased continuously with heat treatment time. The shape retention capability of the W embolization coils increased with the heat treatment time due to an increase in elasticity by formation of tungsten oxide film on W coil surface during the heat treatment. The heat treatment condition of W embolization Col at 600$^{\circ}C$ for 20 minute was considered desirable based on the optimization of the shape retention capability, pitch distance and secondary coil diameter after heat treatment.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.751-756
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• 2016

Graphite was diffusion-bonded by hot-pressing to W-25Re alloy using a Ti interlayer. For the joining, a uniaxial pressure of 25 MPa was applied at $1600^{\circ}C$ for 2 hrs in an argon atmosphere with a heating rate of $10^{\circ}C\;min^{-1}$. The interfacial microstructure and elemental distribution of the W-25Re/Ti/Graphite joints were analyzed by scanning electron microscopy (SEM). Hot-pressed joints appeared to form a stable interlayer without any micro-cracking, pores, or defects. To investigate the high-temperature stability of the W-25Re/Ti/Graphite joint, an oxy-acetylene torch test was conducted for 30 seconds with oxygen and acetylene at a 1.3:1 ratio. Cross-sectional analysis of the joint was performed to compare the thickness of the oxide layer and its chemical composition. The thickness of W-25Re changed from 250 to $20{\mu}m$. In the elemental analysis, a high fraction of rhenium was detected at the surface oxidation layer of W-25Re, while the W-25Re matrix was found to maintain the initial weight ratio. Tungsten was first reacted with oxygen at a torch temperature over $2500^{\circ}C$ to form a tungsten oxide layer on the surface of W-25Re. Then, the remaining rhenium was subsequently reacted with oxygen to form rhenium oxide. The interfacial microstructure of the Ti-containing interlayer was stable after the torch test at a temperature over $2500^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.348-352
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• 2007

In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.611-615
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• 2013

Vanadium oxide ($VO_2$) and tungsten-doped vanadium oxide (W-$VO_2$) powder, well known as thermochromic materials, were prepared from vanadium pentoxide ($V_2O_5$) and oxalic acid dihydrate by hydrothermal and calcination process. The crystal structure and thermochromic property of samples were analyzed using FE-SEM, XRD, XPS, DSC, and UV-Vis-NIR spectroscopy. With increasing the doping amount of W, the phase transition temperature of W-$VO_2$ sample decreased from $70^{\circ}C$ to $42^{\circ}C$. When heating W-$VO_2$ sample above the phase transition temperature, the UV-Vis-NIR spectrum was not changed in the visible range and shifted towards a low transparency in the full name (NIR) region.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.627-632
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• 1995

W-Cu composites utilize the high electrical conductivity of copper and arc erosion resistance of tungsten to provide properties better suited to electrical contact applications than either tungsten or copper alone. W-Cu composite materials were milled in an attritor with an impeller speed of 300rpm for various milling times. The milled powders were compacted at 300MPa into cylinders, 16m in diameter, and approximately 4m high. Sintering was performed in dry H$_2$at temperature ranging from 1200$^{\circ}C$ to 1400$^{\circ}C$. Samples were sectioned and were polished for scanning electron microscopy (SEM) of microstructures. Homogeneous W-Cu composites were formed after 10 hours mechanical alloying and could be attained 99% density at 1330$^{\circ}C$. As mechanical alloying time increased, Fe-concentration was increased linearly. Intermetallic compound formation interupted the growth of W particles Increased hardness.

• Journal of Powder Materials
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• v.11 no.3
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• pp.253-258
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• 2004

We report a carbothermal reduction process for massive synthesis of monolithic W$_{18}$O$_{49}$ phase from tungsten oxide in the presence of carbon source. Carbon black powder was used as a carbon source and added to WO$_3$ by 40 weight percent. Bundles of W$_{18}$O$_{49}$ rods were formed over the temperature range of 80$0^{\circ}C$$^{\circ}C$ to 90$0^{\circ}C$. Pure W$_{18}$O$_{49}$ bundles could be separated from the mixture of W$_{18}$O$_{49}$ and residual carbon black powder. Field emission character of W$_{18}$O$_{49}$ phase was determined using the extracted W$_{18}$O$_{49}$ rods. Flat lamp fabricated from the W$_{18}$O$_{49}$ rods showed the turn-on field of 9.3 V/${\mu}m$.