• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.366-367
• /
• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.178-179
• /
• 2014

In this study, $Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electrodeposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano particles. The structure and microstructure ofcoatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on microstructure, microhardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.05a
• /
• pp.171-172
• /
• 2015

$Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electro-deposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano-particles. The structure and micro-structure of coatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on micro-structure, micro-hardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.

• Transactions of Materials Processing
• /
• v.30 no.1
• /
• pp.16-21
• /
• 2021

A new concept of ammunition without the use of explosive gunpowder has been recently studied, which achieves performance equal to or higher than that of high explosives. Frangible Armor Piercing (FAP) is one of the concepts, which utilizes a tungsten alloy penetrator specialized for fragmentation. To investigate the fracture behavior of the tungsten alloy penetrator, Taylor impact tests were conducted at various impact velocities. Additionally, finite element analysis was performed to predict the fracture behavior of the tungsten alloy. Compression tests were also carried out at six strain rates for dynamic material properties and the dynamic hardening behavior was successfully predicted with the Lim-Huh model. Finally, the Mohr-Coulomb fracture model based on the mean stress was adopted to predict impact failure in Taylor impact simulation. The analysis predicts the deformation and fracture behaviors of the tungsten alloy successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.33-36
• /
• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina $(Al_2O_3)$ abrasive containing slurry with 5 % $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with 5 % $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.157-157
• /
• 1999

Electrochromic tungsten oxide films were prepared by the electron beam deposition, and the dependence of the electrochemical stability and the optical properties on the titanium concentration, and on the annealing temperature, that was investigated. coloring and bleaching experiments were repeated by cyclic voltammetry in a propylene carbonate solution of LiClO4. Spectrometry was used to assess the stability of the transmittance in the degraded films. Tungsten oxide films with titanium contents of about 10~15 mol% were found to be most stable, undergoing the least degradation during the repeated for coloring and bleaching cycles. The reason for this small amount of degradation was the reduction of lithium ion trapping sites in the films, which results in an increased durability. Tungsten oxide films with titanium contents of about 20 mol% were annealed at 20$0^{\circ}C$ for 1 hour, and this results showed that durability of films were increased.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.1
• /
• pp.81-90
• /
• 1990

In this study, ion beam deposited tungsten thin film for gate material of GaAs SAGFET(Self Aligned Gate FET) was annealed from 800\ulcorner to 900\ulcorner using RTA and detailed investigations of structural and electrical characteristics of this film were carried out using four-point probe, XRD, SEM, AES and current-voltage measurement. Investigated results showed phase of as deposited tungsten film was fine grain \ulcornerphase and phase tdransformation of this film into \ulcornerphase occured at annealing condition of 900\ulcorner, 6sec. But regardless of phase transformation, electrical characteristics of tungsten film were very stable to 900\ulcorner and in case of 900\ulcorner, 4sec annealing condition Schottky barrier height obtained from 10 diodes measurements was 0.66 + 0.003 eV.

• Journal of the Korean Society for Precision Engineering
• /
• v.24 no.6
• /
• pp.105-112
• /
• 2007

Tungsten wire micro electrochemical machining (W-wire micro ECM) with ultra-short pulses enables precise micro machining of metal. In wire micro ECM, platinum wire has been used because it is electrochemically stable. However, the micro metal wire with low strength is easily deformed by hydrogen bubbles which are generated during the machining. The wire deformation decreases the machining accuracy. To reduce the influence of hydrogen bubbles, in this paper, the use of tungsten wire was investigated. To improve machining accuracy, suitable pulse conditions which affect generation of bubbles were also investigated. The tungsten wire micro ECM can be applied to the fabrication of various shapes. Using this method, various micro-parts and shapes were fabricated.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.55-61
• /
• 2011

The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powers were fabricated by mechanical alloying, mixed with tungsten(W) powders, and hot-pressed at $550^{\circ}C$ for 30 minutes. Thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ were characterized as a function of the volume percent of tungsten-powder addition. The power factor of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ was $21.9{\times}10^{-4}$ $W/m-K^2$, and was improved to $30.5{\times}10^{-4}$ $W/m-K^2$ by dispersion of 1 vol% W powders. While the dimensionless figure-of-merit of the $Bi_2(Te_{0.9}Se_{0.1})_3$ hot-pressed without dispersion of W powders was measured as 0.52 at room temperature, it became substantially enhanced to 0.95 with addition of 1 vol% W powders.

• Journal of the Korean Vacuum Society
• /
• v.17 no.6
• /
• pp.518-522
• /
• 2008

The miniaturization of device size and multilevel interlayers have been developed by ULSI circuit devices. These submicron processes cause serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Therefore it is necessary to implement a barrier layer between Si and metal. Thus, the size of multilevel interconnection of ULSI devices is critical metallization schemes, and it is necessary reduce the RC time delay for device speed performance. So it is tendency to study the Cu metallization for interconnect of semiconductor processes. However, at the submicron process the interaction between Si and Cu is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Thus, we suggest the tungsten-carbon-nitrogen (W-C-N) thin film for Cu diffusion barrier characterized by nano scale indentation system. Nano-indentation system was proposed as an in-situ and nanometer-order local stress analysis technique.