• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.7-9
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• 2006

$(BaSr)TiO_3$ thick films were prepared by tape casting method using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties and low temperature sintering. Sintering density was $5.7\;g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. The dielectric constant was increased and curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.586-589
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• 2012

In this paper, a tunable capacitor like an interdigital one is presented for low-voltage applications. In order to reduce operation voltage by enhancing fringing electric fields, two finger-patterned electrodes are vertically separated by employing a multi-layer thin film dielectric of a para-/ferro-/para-electrics without spacing between electrodes. The proposed tunable capacitor was fabricated on a quartz wafer and its characteristics are analyzed in terms of effective capacitance and tunability with a function of applied voltages, compared to the conventional interdigital capacitor (IDC). At 8V and 2 GHz, the proposed tunable capacitor shows the tunability of 18 % that is 10.3 % higher than that of the compared one.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.215-218
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• 2002

In this paper, we propose a microstrip line tunable phase shifter. If we vary the applied bias voltage, the relative dielectric constant of ferroelectrics also changes and we designed tunable phase shifter using Au/BSTO/MgO/Au structure. We also used a coupling structure to increase the amount of phase shift at certain frequency in a limited size and we could reduce the loss by reducing the line width.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.75-82
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• 1999

TE$_{01\;{\delta}}$ mode Cavity Resonators with a low loss dielectric rod and YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) endplates were prepared and their microwave properties were studied at temperatures above 30 K. Both sapphire and rutile were used as the dielectrics. The TE$_{01\;{\delta}}$ mode Q$_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the dielectric rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K and .the resonant frequency of 19.56GHz when a sapphire rod was used for the dielectric. The TE$_2Cu_3O_{7-{\delta}}$ mode resonant frequency (f$_0$) appeared to decrease as the temperature is raised. Meanwhile, the temperature dependence of the TE$_2Cu_3O_{7-{\delta}}$ mode f$_0$ of the rutile-loaded resonator appeared different with f$_0$ increasing according to the temperature and Q$_0$ more than 300000 at 30 K and f$_0$ = 8.56 CHz. Comparisons were made between the microwave properties of the sapphire-loaded and the rutile-loaded resonators. Also, applications of the TE$_2Cu_3O_{7-{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q$_0$ as · well as a characterization tool for surface resistance measurements of HTS films are described.

• ETRI Journal
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• v.39 no.3
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• pp.390-397
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• 2017

In this paper, we propose a scheme for designing a tunable pixel layer based on a $Ge_2Sb_2Te_5$ (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry-Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first-to-zeroth-order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength-selective type by tuning the dielectric thickness, and we discuss a multi-phase example with a double-stack structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.110-120
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• 2010

In this paper, we propose a tunable SIW(Substrate Integrated Waveguide) using dielectric screws for eliminating the phase imbalance of large size power distribution networks(PDN). Alumina screws partially inserted into several through holes of the tunable SIW section effectively change the phase shift without S-parameter degradation. ${\pm}33.9^{\circ}$ measured phase imbalance of a large conventional 9 GHz SIW-PDN of $370\;mm{\times}195\;mm$ size has been greatly reduced to ${\pm}4.65^{\circ}$. We expect that the proposed tunable SIW plays an important role for a light-weight, high performance substrate integrated phased array system(Si-PAS) and large size SIW circuit applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.561-563
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• 2012

In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.124-127
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• 2002

A RF tunable bandpass filter using dielectric resonators and varactor diodes is redesigned to improve the passband flatness. Since the tunable liters are generally of narrow bandwidth and the Q value of the varactor diode is usually very low, the passband flatness is strongly deteriorated by sizeable distortion loss. To remedy this problem, we construct modified Chebyshev type filter by use of network synthesis techniques. The key of modified Chebyshev type filter is the rearrangement of the passband poles to improve the passband flatness. To maintain the constant passband bandwidth, design techniques of input/output stage and coupling windows are also applied. Experimental results show that the passband flatness can be improved by purposed method without any additional RF amplitude equalizer.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.380-384
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• 2003

The effects of the mole concentrations of precursor solution on the microstructure and dielectric properties of sol-gel deposited $Ba_{0.85}$S $r_{0.15}$Ti $O_3$(BST) thin films have been investigated. The films were of single perovskite phase with strong (100) preferred orientation when grown on LaNi0$_3$ buffered Pt/Ti/ $SiO_2$Si substrates using a diluted precursor solution. Variation of the precursor solution concentration resulted in a different microstructure and, in turn, affected the tunability of the sol-gel deposited films. It was observed that leakage currents increased asymmetrically for the negative and positive bias voltage with decreasing thickness. Overall results suggest that those BST films have acceptable properties f3r applications as room-temperature tunable elements.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.2847-2848
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• 2012