• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.27-33
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• 1998

We have investigated tunneling magnetoresistance (TMR) properties of Fe/$Al_2O_3$/Co magnetic trilayer junctions sputtered on single-crystal Si (001) substrates. $Al_2O_3$ layers with thicknesses of 50~200 $\AA$ were deposited directly on the bottom ferromagnetic layer by a reactive rf sputtering. For comparsion, we prepared Pt/$Al_2O_3$/Pt tunnel junctions whose current-voltage (I-V) characteristics measured at 300 K indicated that reactively sputtered $Al_2O_3$ is a particularly good material for thin insulating barriers and allows us to form pinhole-free tunnel barriers. The magnetic tunnel junctions exhibit changes of tunnel resistance of about 0.1% at 300 K with an applied magnetic field and it was found that most junctions with Co as a top electrode have rather good I-V and TMR characteristics compared to those with Fe as a electrode. These results were discussed in relation to interfacial on the basis of those for Pt/$Al_2O_3$/Pt.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.2
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• pp.63-67
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• 2015

$TiO_2/Ag/TiO_2$ trilayer films were deposited with radio frequency (RF) and direct current (DC) magnetron sputtering onto the glass substrate to consider the influence of Ag interlayer on the optical properties of the films. The thickness of $TiO_2$ films was kept at 24 nm, while the thickness of Ag interlayer was varied as 5, 10, 15, and 20 nm. As-deposited $TiO_2$ single layer films show the optical transmittance of 66.7% in the visible wave-length region and the optical reflectance of 16.5%, while the $TiO_2$ films with a 15 nm thick Ag interlayer show the enhanced optical transmittance of 80.2% and optical reflectance of 77.8%. The carrier concentration was also influenced by Ag interlayer. The highest carrier concentration of $1.01{\times}10^{23}cm^{-3}$ was observed for a 15 nm thick Ag interlayer in $TiO_2/Ag/TiO_2$ films. The observed result means that an optimized Ag interlayer in $TiO_2/Ag/TiO_2$ films enhanced the structural and optical properties of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.55-58
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• 2003

FeMn based spin valves often consist of a NiFe/FeMn/NiFe trilayer structure. We have investigated the evolution of exchange bias at the bottom and top interfaces in the NiFe(5nm)/FeMn(x)/NiFe(5nm) trilayer structure as a function of FeMn thickness in the range 3 nm to 30 nm. The XRD results indicate (111) textured growth for NiFe and FeMn layers. The magnetization studies using VSM show two hysteresis loops corresponding to the bottom NiFe seed layer and top NiFe layers with greater bias for the bottom NiFe layer, for FeMn thickness equal to and above 5 nm. The larger exchange bias for the bottom seed layer is confirmed by the surface sensitive MOKE hysteresis loop measurements which show gradual weakening of the MOKE hysteresis loop for the bottom NiFe layer with increasing FeMn thickness. The observed large exchange bias in a spin valve structure is usually attributed to the pinning NiFe layer on top of the FeMn layer, even when a NiFe seed layer of a few nm thickness is present, whereas, in reality it may be arising from the bottom seed layer, as shown by the present study.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.273-279
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• 1999

In order to study a reversible photoisomerization of disperse red l(DR 1) attached on natural polymers, cellulose acetate containing DR l(DR 1/CA adduct) was prepared, and the changes of UV/VIS spectra of its solution(benzene, DMAc). thick film, and LB film were investigated by alternate irradiation with two different wave length lights. DR 1/CA adduct was prepared through tosylation of partially hydrolyzed cellulose acetate followed by reaction with DR 1 at $100^{\circ}C$ in pyridine. From the UV/VIS spectra of DR 1/CA adduct dissolved in DMAc solvent including phosphoglyceride before and after irradiation at 360nm and 45Onm, we found out the changes of UV/VIS spectra were reversible. In addition, the change of UV/VIS spectra of this adduct solution was strongly depended on the sorts of solvents and temperature. As the temperature was increased, UV/VIS spectra of this adduct solution in DMF showed blue shift. These results provided this solution could be applied to a temperature sensor. In the thick film case, we also obtained similar results with solution case. LB monolayer and trilayer from DR 1/CA adduct was obtained by scattering the solution including phosphoglyceride on water surface at the surface pressure of 8mN/m. After irradiation on that LB monolayer and trilayer, the reversible photoisomerization was also detected. From these results we concluded DR 1/CA adduct was suitable for the application to data storage and optical switch, etc.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.360-363
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• 2005

Biomimetic actuators composed of cellophane with an electrically conducting polyaniline(PANI) film have been fabricated and tested in air ambience conditions doped with two different counter ions such as perchlorate (${ClO_4}^-$) and tetrafluoroborate (${BF_4}^-$). Fabrication of the trilayer CP//CELLOPHANE//CP substantially enhanced the tip displacement (13.2mm) compared to the small displacement (8.3mm) of the bilaye. CP//CELLOPHANE. The ion migration among layers is the main factor behind the expansion of cellophane, while the expansion/contraction of PANI are dependent on the redox reaction of the polymer. The displacement of the composite is dominated by the humidity content. This implies that the actuation principle is possibly due to the assistance of water existing.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.249-255
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• 1994

Magneto-optical disks with dielectric layers for optical tunning are useful for maximizing the SNR. We have developed a computer program based on characteristic matrix to investigate the best combination of the film thicknesses. We have optimized the thicknesses of the multilayers which were composed of TbFeCo, dielectric, and AI layers at the wavelengh of 830nm. The criterion for the optimization of the film thickness was to maximize the figure of merit with maintaining the low ellipticity and rmre than 10% reflectivity.

• Journal of Magnetics
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• v.17 no.4
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• pp.261-264
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• 2012

Interfacial properties of 5 nm MgO(001)/7 nm Fe(001)/1.8 nm MgO(001)/t nm Cu-phthalocyanine (CuPc) hybrid multilayers with t = 0, 1, 7, and 10 were investigated by using x-ray photoemission spectroscopy (XPS). Rather sharp interfacial properties were observed in the CuPc films grown on an epitaxial MgO/Fe/MgO(001) trilayer than a MgO/Fe(001) bilayer. This work suggests a new way to improve device performance of organic spintronic devices by utilizing an artificially grown MgO(001) thin layer.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.29-29
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• 2015

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.972-974
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• 2005

For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to $Alq_3$. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer ($Alq_3-LiF-Al$), LiF and Mg inserted between ITO and $Alq_3$, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.64-70
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• 1995

We discussed the thermal analysis for a recording media with the variation of the laser pulse duration, the laser power and the temperature distribution in order to optimize the Te-based antireflection structure from the computer calculations. In the case that the radial heat diffusion is negligible, we can calculate the maximum temperature of the recording layer at the center of the spot by the Simple Model. The temperature profile of the recording layer is obtained from the Numerical Model by considering the total specific heat and the latent heat. As a result, the effect of the heat sinking acting as a thermal loss for the hole formation could be minimized by introducing the pulse with the hole formation duration(.tau.) below the thermal time constant(.tau.$_{D}$) of a dielectric layer. These requirments can be satisfied by using the dielectric thickness of the 2nd ART(Anti-Reflection Trilayer) condition or the dielectric materials with a low thermal diffusivity.y.